Diodes Incorporated ZMS2811TC

Overview

ZMS2811TC from Zetex Semiconductors (now Diodes Incorporated) is a Schottky barrier diode in SOD323 package, designed for high-frequency signal routing in RF front-ends. It delivers 15 V breakdown voltage, 410 mV forward voltage at 1 mA, 100 nA reverse leakage at 10 V, and 1.0 pF junction capacitance at 0 V - enabling low-loss detection and mixing in portable UHF receivers.

For engineers reviewing the ZMS2811TC datasheet, ZMS2811TC pinout, ZMS2811TC application, or ZMS2811TC equivalent, key selection criteria include verified 15 V VR rating, sub-1 pF CT at zero bias, picosecond minority carrier lifetime, and thermal stability up to +150°C ambient - critical for compact RF detector and mixer designs requiring minimal insertion loss and fast switching.

Technical Context

This Schottky diode operates without minority-carrier storage delay, achieving 100 ps effective minority lifetime under 54 MHz, 20 mA peak current conditions. Its low 410 mV VF at 1 mA enables efficient signal detection with minimal DC bias overhead in battery-powered receivers.

The device sustains 100 nA IR at VR = 10 V and exhibits stable 1.0 pF CT at 0 V, 1 MHz - parameters directly supporting broadband impedance matching and harmonic suppression in 300–900 MHz RF paths without external tuning.

Key Specifications

Pinout & Package

SOD323 surface-mount package: 1.7 mm × 1.25 mm × 0.9 mm body, cathode band marked on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with BAT54C and NSR0230HT1G, ZMS2811TC uniquely balances 15 V V_BR, 1.0 pF C_T, and 410 mV V_F in SOD323 - making it optimal for space-constrained UHF detectors where bandwidth, leakage, and thermal robustness are co-critical.

Availability

ZMS2811TC is available at Aetrix Electronics and suitable for RF detector circuits, UHF mixer stages, low-power sensor interfaces, and portable GPS front-ends requiring stable component supply across production lifecycles.

Supply support for ZMS2811TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors, acquired by Diodes Incorporated in 2008, specialized in high-performance discrete semiconductors for analog and RF signal conditioning.

ZMS series Schottky diodes were engineered specifically for microwave detection and mixing in portable communications equipment - emphasizing low V_F, minimal C_T, and thermal resilience in miniature packages.

FAQ

What is the maximum reverse voltage ZMS2811TC can withstand continuously?

ZMS2811TC has a rated breakdown voltage of 15 V at I_R = 10 µA, verified per absolute maximum ratings. Continuous reverse bias must remain below this value to avoid avalanche conduction; derating to 12 V is recommended for reliability in temperature-varying environments.

Does ZMS2811TC require external bias for RF detection applications?

No. ZMS2811TC operates as a zero-bias detector due to its 410 mV forward voltage and 100 nA reverse leakage at 10 V. It rectifies RF signals directly without DC biasing, making it ideal for battery-sensitive applications like portable radios and RFID harvesters.

How does ZMS2811TC's 1.0 pF capacitance impact 900 MHz circuit design?

At 900 MHz, 1.0 pF presents ~177 Ω capacitive reactance, allowing direct integration into 50 Ω transmission lines with <0.2 dB insertion loss. This enables simple series or shunt detector configurations without impedance-matching networks in compact PCB layouts.

Is ZMS2811TC RoHS compliant and halogen-free?

Yes. As a Diodes Incorporated product (original Zetex part), ZMS2811TC meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21, with lead-free matte tin termination and compliant packaging per J-STD-020 moisture sensitivity level 1.