Vishay Siliconix 2N6660-2

Overview

2N6660-2 from Vishay Siliconix is an N-channel enhancement-mode MOSFET rated for 60 V drain-source voltage, with R_DS(on) = 1.3 Ω at V_GS = 10 V and 1 A, low 1.7 V gate threshold, 35 pF input capacitance, and 8 ns turn-on time. It serves as a logic-level–driven power switch in high-reliability relay, solenoid, and lamp drivers.

For engineers reviewing the 2N6660-2 datasheet, 2N6660-2 pinout, 2N6660-2 application, or 2N6660-2 equivalent, key selection criteria include its TO-205AD (TO-39) metal-can package, guaranteed military-grade reliability per JANTX flow, and direct TTL/CMOS interface capability without buffer stages.

Technical Context

This device operates as a single N-channel silicon power MOSFET with enhancement-mode gate control. Its low 1.7 V typical V_GS(th) enables direct drive from 3.3 V or 5 V logic, while the 1.3 Ω R_DS(on) at 10 V ensures low conduction loss at up to 0.99 A continuous drain current (T_C = 25 °C).

Thermal design is supported by a 20 °C/W junction-to-case resistance and 170 °C/W junction-to-ambient rating. The drain is internally connected to the case (metal can), requiring appropriate isolation in PCB layout when mounting to heatsinks.

Key Specifications

Pinout & Package

2N6660-2 is housed in a hermetically sealed TO-205AD (TO-39 tall lid) metal-can package with three leads: Drain (case-connected), Gate, and Source. The case serves as the drain terminal and must be electrically isolated unless used as heatsink return path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with 2N6660-2, the 2N6660JANTX offers identical electrical performance with enhanced lead finish and screening documentation, while 2N6660JANTXV adds PIND and full lot testing-making both alternatives suitable for higher assurance tiers but not drop-in replacements without compliance review.

Availability

2N6660-2 is available at Aetrix Electronics and suitable for high-reliability relay drivers, battery-operated load switches, and solid-state relay modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 2N6660-2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on high-reliability and high-performance applications.

The 2N6660 family belongs to Vishay's legacy military-qualified power MOSFET line, designed specifically for logic-level–driven switching in aerospace, defense, and industrial control systems where robustness and long-term availability are essential.

FAQ

What is the gate threshold voltage specification for the 2N6660-2?

The 2N6660-2 has a gate-source threshold voltage V_GS(th) of 0.8 V minimum, 1.7 V typical, and 2.0 V maximum at I_D = 1 mA and V_DS = V_GS. This low threshold enables direct interface with 3.3 V and 5 V logic families without level shifting. The 2N6660-2 maintains usable conduction down to 0.3 V V_GS(th) at 125 °C, supporting high-temperature operation.

Is the 2N6660-2 pin-compatible with standard TO-39 packaged MOSFETs?

Yes, the 2N6660-2 uses the TO-205AD (TO-39 tall lid) package with standardized mechanical dimensions and 3-lead top-view pinout (D-G-S left-to-right). Its drain-is-case construction matches industry-standard TO-39 power MOSFET layouts, though thermal and isolation requirements must be verified against the 2N6660-2's specific R_thJC = 20 °C/W and case-drain bond.

Does the 2N6660-2 require a gate resistor in typical switching applications?

Yes, a series gate resistor (typically 10–100 Ω) is recommended for the 2N6660-2 to dampen ringing caused by gate-drain capacitance (Crss = 7–10 pF) and PCB trace inductance. Without it, fast edges may induce oscillation during switching transitions, especially at >5 MHz PWM frequencies. The 2N6660-2's low C_iss (35 pF) makes it particularly responsive-and thus more susceptible-to such effects.

What is the maximum continuous drain current for the 2N6660-2 at 100 °C case temperature?

The 2N6660-2 supports 0.62 A continuous drain current at T_C = 100 °C, derated from 0.99 A at 25 °C. This linear derating reflects its 6.25 W maximum power dissipation and 20 °C/W junction-to-case thermal resistance. Sustained operation above this limit risks exceeding the 150 °C maximum junction temperature, triggering thermal runaway.

How does the 2N6660-2 differ from the commercial-grade 2N6660 in terms of manufacturing flow?

The 2N6660-2 follows the same JANTX flow as the 2N6660JANTX but omits final DSCC certification documentation and lot traceability reporting. It retains all military-grade screening (burn-in, thermal cycling, vibration) and gold-plated leads, making it functionally identical to 2N6660JANTX electrically and physically-but supplied without formal MIL-PRF-19500/525 compliance paperwork. The 2N6660-2 is intended for high-reliability programs where performance matters more than audit-ready certification.