Vishay Siliconix 2N6660-E3

Overview

2N6660-E3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET rated for 60 V drain-source voltage, with R_DS(on) = 1.3 Ω at V_GS = 10 V and 1 A, low 1.7 V gate threshold, 35 pF input capacitance, and 8 ns turn-on time. It serves as a logic-level switch in solid-state relays, solenoid drivers, and battery-powered systems requiring reliable low-voltage gate drive.

For engineers reviewing the 2N6660-E3 datasheet, 2N6660-E3 pinout, 2N6660-E3 application, or 2N6660-E3 equivalent, key selection criteria include its TO-205AD (TO-39) package, military-qualified reliability, 0.99 A continuous drain current at 25 °C, and direct TTL/CMOS interface capability without buffer stages.

Technical Context

This discrete power MOSFET operates in enhancement mode with a single N-channel structure. Its gate threshold voltage of 0.8–2.0 V enables operation from standard logic outputs, while the 1.3 Ω on-resistance at 10 V gate drive supports efficient switching at up to 1 A load current.

The device features low 35 pF input capacitance and fast 8 ns turn-on/8.5 ns turn-off times under 25 Ω gate resistance, making it suitable for high-speed digital switching. Drain-source breakdown is guaranteed at ≥60 V, and the drain is internally connected to the metal case per TO-205AD mechanical specification.

Key Specifications

Pinout & Package

2N6660-E3 is housed in a hermetically sealed TO-205AD (TO-39 tall lid) metal can package with three leads: Drain (case-connected), Gate, and Source. The case serves as the drain terminal and must be electrically isolated from other system potentials unless intentionally used as common return.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004LK-7 and IRF510PBF, the 2N6660-E3 offers unique value in through-hole, hermetically sealed, 60 V-rated logic-level switching where military-grade reliability and compact TO-39 form factor are mandatory.

Availability

2N6660-E3 is available at Aetrix Electronics and suitable for solid-state relays, solenoid drivers, and battery-operated instrumentation requiring stable component supply across extended production lifecycles.

Supply support for 2N6660-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete semiconductors, passive components, and sensors, with emphasis on high-reliability and power-efficient solutions.

The 2N6660-E3 belongs to Vishay's legacy military-qualified power MOSFET product line, designed specifically for ruggedized switching in aerospace, defense, and industrial control systems demanding proven field reliability.

FAQ

What is the maximum continuous drain current for the 2N6660-E3 at 100 °C case temperature?

The 2N6660-E3 supports 0.62 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations due to its 20 °C/W junction-to-case thermal resistance. At higher ambient temperatures or without heatsinking, the actual usable current must be further reduced to maintain T_J ≤ 150 °C. The 2N6660-E3 datasheet confirms this value under steady-state conduction conditions.

Is the drain terminal of the 2N6660-E3 electrically connected to the metal case?

Yes, the drain terminal of the 2N6660-E3 is internally bonded to the metal case, as confirmed in the Package Information document (71367) and schematic top-view diagram. This requires electrical isolation of the mounting surface unless the drain node is intentionally referenced to chassis ground. The 2N6660-E3 TO-205AD mechanical drawing explicitly states "Drain is electrically connected to the case."

Does the 2N6660-E3 meet RoHS requirements?

Yes, the 2N6660-E3 is lead (Pb)-free and RoHS-compliant, as indicated in the Ordering Information table where "2N6660-E3" is defined as the "Commercial, Lead (Pb)-free" variant. Vishay's part numbering convention uses "-E3" suffix to denote RoHS-compliant, lead-free termination on TO-205AD packaged devices.

What is the gate-source voltage range for the 2N6660-E3?

The 2N6660-E3 has a gate-source voltage rating of ±20 V, meaning it can withstand –20 V to +20 V between gate and source without damage. Operation within ±12 V is recommended for long-term reliability. This rating is listed under Absolute Maximum Ratings and applies regardless of drain voltage. The 2N6660-E3 gate oxide is rated for this stress level per Vishay's qualified manufacturing process.

Can the 2N6660-E3 be driven directly by a 3.3 V microcontroller GPIO?

Yes, the 2N6660-E3 can be driven directly by a 3.3 V microcontroller GPIO because its gate threshold voltage V_GS(th) is specified from 0.8 V to 2.0 V (typical 1.7 V), ensuring full enhancement at 3.3 V. At 3.3 V, R_DS(on) increases to ~2.5 Ω (per typical curves), still sufficient for ≤400 mA loads. The 2N6660-E3 datasheet confirms low-threshold operation suitable for direct logic-level interface.