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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N6660JTXV02

Name: 2N6660JTXV02
Brand: Vishay Siliconix
SKU: 2N6660JTXV02
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6660JTXV02

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-205AD, TO-39-3 Metal Can

Datasheet:: 2N6660JTXV02.pdf

Description:: MOSFET N-CH 60V 990MA TO205AD

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Product details

Overview

2N6660JTXV02 from Vishay Siliconix is a military-grade N-channel enhancement-mode MOSFET rated for 60 V drain-source voltage, 1.3 Ω R_DS(on) at V_GS = 10 V, and 0.99 A continuous drain current at T_C = 25 °C. It features low 1.7 V gate threshold, 35 pF input capacitance, and 8 ns turn-on time, enabling direct TTL/CMOS logic-level drive in high-reliability relay and solenoid control circuits.

For engineers reviewing the 2N6660JTXV02 datasheet, 2N6660JTXV02 pinout, 2N6660JTXV02 application, or 2N6660JTXV02 equivalent, key selection criteria include its JANTXV qualification per MIL-PRF-19500, TO-205AD (TO-39) metal-can package with case-connected drain, and verified performance across -55 °C to +150 °C junction temperature range.

Technical Context

This device operates as a single N-channel switching element with enhancement-mode gate control. Its low 1.7 V typical V_GS(th) enables reliable turn-on from standard 3.3 V and 5 V logic, while the 1.3 Ω R_DS(on) at 10 V ensures minimal conduction loss at rated current.

The TO-205AD package integrates the drain terminal electrically with the metal case, supporting efficient heat transfer to a heatsink. Dynamic parameters-including 35 pF C_iss, 8 ns t_ON, and 8.5 ns t_OFF-are characterized under defined load conditions (V_DD = 25 V, R_g = 25 Ω) and remain stable across operating temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage before avalanche breakdown; defines safe operation in 48 V systems with margin.
R_DS(on)	1.3 Ω @ V_GS = 10 V, I_D = 1 A - Low conduction loss yielding ≤1.3 W dissipation at full rated current.
V_GS(th)	0.8–2.0 V @ I_D = 1 mA - Ensures robust turn-on from 3.3 V logic without external level-shifting.
C_iss	35 pF typical @ V_GS = 0 V, V_DS = 25 V - Enables fast switching with low gate drive power requirement.
t_ON/t_OFF	8 / 8.5 ns @ V_DD = 25 V, R_g = 25 Ω - Supports >50 MHz switching in pulsed control applications.
T_J Range	-55 °C to +150 °C - Qualified for extended-temperature military and aerospace environments.
P_D	6.25 W @ T_C = 25 °C - Thermal limit set by R_thJC = 20 °C/W; requires heatsinking above ~0.6 A continuous.

Pinout & Package

2N6660JTXV02 is housed in a hermetically sealed TO-205AD (TO-39 tall lid) metal-can package with three leads and drain connected to the case. The package provides high reliability, low thermal resistance (R_thJC = 20 °C/W), and compatibility with standard military mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
1 (Top View: Left)	Drain (D)	Electrically tied to metal case; must be isolated from PCB ground unless system design permits case grounding.
2 (Top View: Center)	Gate (G)	High-impedance MOSFET control terminal; requires ESD-safe handling and low-inductance gate routing.
3 (Top View: Right)	Source (S)	Reference node for gate drive; forms return path for load current and defines V_GS reference point.

Key Features

Feature	Design Value
MIL-PRF-19500 JANTXV qualification	Guaranteed screening, lot traceability, and extended temperature validation per military specification.
Low 1.7 V gate threshold	Enables direct interface with 3.3 V and 5 V CMOS/TTL outputs without gate driver ICs.
Drain-to-case connection	Reduces thermal path resistance and simplifies heatsinking; requires electrical isolation planning in PCB layout.
35 pF input capacitance	Minimizes required gate charge (Q_g ≈ 12.5 pC), lowering drive power and enabling faster edge rates.
170 mS forward transconductance	Provides strong gain control over drain current, improving linearity in analog switching and linear-regulator applications.

Applications

Relay/Solenoid Drivers	Battery-Powered Hi-Rel Systems
Use Scenario: Driving 24 V DC relays and 12 V solenoids in airborne avionics control modules where long-term reliability and radiation tolerance are critical. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling inductive loads with flyback protection. Use Value: 1.3 Ω R_DS(on) limits I²R heating during sustained actuation; JANTXV screening ensures >10,000-hour MTBF in mission-critical use.	Use Scenario: Power switching in portable tactical radios operating from Li-ion or primary battery packs across extreme ambient temperatures. IC Role / Device Role / Timing Role: Load switch isolating subsystems during standby to minimize quiescent current drain. Use Value: 100 nA max I_GSS and <1 μA I_DSS at 48 V prevent battery leakage; -55 °C to +150 °C rating supports arctic and desert deployment.
Solid-State Relay Modules	Direct Logic-Level Interface Circuits
Use Scenario: Building compact, hermetic SSRs for industrial PLC output stages requiring zero-crossing immunity and no moving parts. IC Role / Device Role / Timing Role: Main power switching element in opto-isolated output stage driving AC/DC loads up to 60 V. Use Value: Fast 8 ns t_ON enables precise timing control; TO-205AD package withstands reflow and mechanical shock per MIL-STD-202.	Use Scenario: Interfacing FPGA I/O banks directly to 5 V peripheral drivers in space-qualified data acquisition units. IC Role / Device Role / Timing Role: Level-translating buffer and current amplifier between low-voltage logic and higher-power peripherals. Use Value: 0.8–2.0 V V_GS(th) guarantees turn-on at 3.3 V logic high; low C_iss prevents signal degradation on fast GPIO lines.

Relay/Solenoid Drivers

Battery-Powered Hi-Rel Systems

Use Scenario: Driving 24 V DC relays and 12 V solenoids in airborne avionics control modules where long-term reliability and radiation tolerance are critical.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling inductive loads with flyback protection.

Use Value: 1.3 Ω R_DS(on) limits I²R heating during sustained actuation; JANTXV screening ensures >10,000-hour MTBF in mission-critical use.

Use Scenario: Power switching in portable tactical radios operating from Li-ion or primary battery packs across extreme ambient temperatures.

IC Role / Device Role / Timing Role: Load switch isolating subsystems during standby to minimize quiescent current drain.

Use Value: 100 nA max I_GSS and <1 μA I_DSS at 48 V prevent battery leakage; -55 °C to +150 °C rating supports arctic and desert deployment.

Solid-State Relay Modules

Direct Logic-Level Interface Circuits

Use Scenario: Building compact, hermetic SSRs for industrial PLC output stages requiring zero-crossing immunity and no moving parts.

IC Role / Device Role / Timing Role: Main power switching element in opto-isolated output stage driving AC/DC loads up to 60 V.

Use Value: Fast 8 ns t_ON enables precise timing control; TO-205AD package withstands reflow and mechanical shock per MIL-STD-202.

Use Scenario: Interfacing FPGA I/O banks directly to 5 V peripheral drivers in space-qualified data acquisition units.

IC Role / Device Role / Timing Role: Level-translating buffer and current amplifier between low-voltage logic and higher-power peripherals.

Use Value: 0.8–2.0 V V_GS(th) guarantees turn-on at 3.3 V logic high; low C_iss prevents signal degradation on fast GPIO lines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N6661JTXV02	Same TO-205AD package, but rated for 100 V V_DS and 2.5 Ω R_DS(on) at 10 V; higher breakdown, lower conduction efficiency.	Preferred in 72 V nominal systems or where higher voltage margin is mandatory; not drop-in due to increased R_DS(on).	Select when V_DS > 60 V is required and 2.5 Ω R_DS(on) is acceptable for thermal budget.
2N7000JTXV	TO-92 plastic package, 60 V V_DS, 5 Ω R_DS(on), 200 mA I_D; lacks JANTXV screening and metal-can thermal performance.	Suitable only for low-power, commercial-temperature applications; not qualified for military thermal or reliability requirements.	Use only for non-critical prototyping or cost-sensitive commercial designs where hermeticity and extended temperature are unnecessary.

Compared with 2N6660JTXV02, 2N6661JTXV02 trades lower on-resistance for higher voltage capability, while 2N7000JTXV sacrifices military qualification, thermal performance, and current rating for lower cost and smaller footprint-neither is pin-compatible nor a direct replacement.

Availability

2N6660JTXV02 is available at Aetrix Electronics and suitable for high-reliability relay drivers, battery-powered defense electronics, and solid-state relay modules requiring stable component supply, full traceability, and guaranteed MIL-PRF-19500 compliance.

Supply support for 2N6660JTXV02 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on reliability, precision, and ruggedized packaging.

The 2N6660JTXV02 belongs to Vishay's legacy military MOSFET product line, designed specifically for high-reliability analog and power-switching applications in aerospace, defense, and industrial control systems where long-term stability and environmental resilience are mandatory.

FAQ

What is the gate threshold voltage range for the 2N6660JTXV02?

The 2N6660JTXV02 has a gate-source threshold voltage (V_GS(th)) range of 0.8 V to 2.0 V at I_D = 1 mA and T_A = 25 °C. At -55 °C, the maximum V_GS(th) rises to 2.5 V; at 125 °C, the minimum drops to 0.3 V. This wide operational window ensures consistent turn-on behavior across the full military temperature range, making the 2N6660JTXV02 suitable for systems requiring deterministic switching under thermal stress.

Is the drain terminal of the 2N6660JTXV02 electrically connected to the case?

Yes, the drain terminal of the 2N6660JTXV02 is electrically connected to the metal case in its TO-205AD (TO-39) package. This configuration reduces thermal resistance (R_thJC = 20 °C/W) but requires careful PCB layout: the case must be electrically isolated from ground planes unless the system architecture intentionally grounds the drain. Mounting hardware and insulating washers must be selected accordingly to maintain safety and functionality in the 2N6660JTXV02 application.

What is the maximum continuous drain current for the 2N6660JTXV02 at 100 °C case temperature?

The 2N6660JTXV02 supports a maximum continuous drain current of 0.62 A at T_C = 100 °C, as specified in its absolute maximum ratings table. This derating from the 0.99 A value at 25 °C reflects thermal limitations imposed by package dissipation and junction-to-case resistance. Designers must verify heatsink sizing and ambient airflow to sustain this current reliably, especially in sealed enclosures where T_C may exceed ambient by >50 °C in the 2N6660JTXV02 implementation.

Does the 2N6660JTXV02 meet MIL-PRF-19500 requirements for JANTXV devices?

Yes, the 2N6660JTXV02 is fully qualified to MIL-PRF-19500/507 for JANTXV-level screening, including burn-in, temperature cycling, steady-state life testing, and lot traceability. Its ordering code "JTXV02" explicitly denotes JANTXV qualification with solderable leads and PIND-tested variants. This certification confirms compliance with rigorous military reliability standards, distinguishing it from commercial or JANTX-grade versions like 2N6660JTX02, and validating its use in mission-critical 2N6660JTXV02 deployments.

What is the typical input capacitance of the 2N6660JTXV02 and how does it affect gate drive design?

The 2N6660JTXV02 has a typical input capacitance (C_iss) of 35 pF at V_GS = 0 V and V_DS = 25 V. This low value minimizes required gate charge (Q_g ≈ 12.5 pC), allowing direct drive from microcontroller GPIO pins without external buffers in low-frequency switching applications. However, designers must still account for PCB trace inductance and gate resistor selection to control dV/dt and prevent ringing-especially critical in the 2N6660JTXV02's fast 8 ns t_ON regime.

2N6660JTXV02 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-205AD, TO-39-3 Metal Can

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 990mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 725mW (Ta), 6.25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-205AD (TO-39)

2N6660JTXV02 FAQ

1.How can I place an order for 2N6660JTXV02 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6660JTXV02 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6660JTXV02 reliable?

The price and inventory of 2N6660JTXV02 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6660JTXV02 is usually 5 days.

3.What payment methods are accepted for 2N6660JTXV02?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6660JTXV02 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6660JTXV02?

2N6660JTXV02 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6660JTXV02 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6660JTXV02?

For technical support, including 2N6660JTXV02 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6660JTXV02 requirements.

6.How does Aetrix verify that 2N6660JTXV02 is sourced from the original manufacturer or authorized distributors?

All 2N6660JTXV02 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6660JTXV02 meets industry standards.

7.What is the process for return or replacement of 2N6660JTXV02?

All 2N6660JTXV02 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6660JTXV02, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6660JTXV02 part is unused and in its original packaging.

Return procedure for 2N6660JTXV02:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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