STMicroelectronics 2N7000

Overview

2N7000 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-92 package, rated for 60 V drain-source voltage, 0.35 A continuous drain current, and 1.8 Ω R_DS(on) at V_GS = 10 V. It serves as a low-voltage logic-level switch in discrete power control circuits, commonly used in microcontroller-driven LED drivers, relay drivers, and small-signal load switching.

For engineers reviewing the 2N7000 datasheet, 2N7000 pinout, 2N7000 application, or 2N7000 equivalent, key selection criteria include gate threshold voltage (1–3 V), low gate charge (1.4 nC), rugged avalanche capability, thermal resistance (125 °C/W junction-to-ambient), and compatibility with 3.3 V/5 V GPIO drive without level-shifting.

Technical Context

The 2N7000 employs ST's second-generation STripFET™ process with single-feature-size strip architecture, enabling high cell density and low on-resistance. Its enhancement-mode operation requires positive gate bias to conduct, with V_GS(th) specified from 1 V to 3 V at I_D = 250 µA.

It features integrated source-drain diode (V_SD = 1.2 V at I_SD = 1 A), unclamped inductive switching capability, and guaranteed avalanche energy rating per JEDEC JESD24-1. Safe operating area (SOA) is defined up to 1.4 A pulsed drain current with pulse width limitation.

Key Specifications

Pinout & Package

2N7000 is housed in TO-92 through-hole package (JEDEC TO-92 variant), with leads arranged in linear configuration: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The package supports manual soldering and wave soldering per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level switching applications.

Compared with 2N7002, the 2N7000 offers higher current capability and through-hole mounting; compared with FQP30N06L, it provides optimal size–performance balance for sub-0.4 A discrete switching without thermal overhead.

Availability

2N7000 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O expansion, relay driver stages, and power sequencing control requiring stable component supply across prototyping, pilot production, and long-lifecycle industrial programs.

Supply support for 2N7000 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.

The 2N7000 belongs to ST's legacy Power MOSFET product line, developed specifically for cost-sensitive, low-power discrete switching applications where reliability, logic-level drive, and through-hole manufacturability are essential.

FAQ

Is the 2N7000 suitable for 3.3 V microcontroller GPIO drive?

Yes. With a gate threshold voltage range of 1–3 V and guaranteed turn-on at V_GS = 4.5 V, the 2N7000 reliably switches on using standard 3.3 V logic outputs. R_DS(on) remains below 5 Ω at V_GS = 4.5 V, ensuring low conduction loss for typical 20–100 mA loads.

Does the 2N7000 have built-in ESD protection?

No. The 2N7000 does not integrate ESD protection diodes. External gate protection (e.g., 10 kΩ series resistor + 10 V Zener to source) is recommended when exposed to handling or connector interfaces, especially in automated assembly environments.

Can the 2N7000 replace a bipolar transistor like the 2N2222 in switching applications?

Yes, with design adjustments. Unlike the 2N2222, the 2N7000 is voltage-controlled (not current-controlled), eliminating base drive current requirements. However, its slower turn-off (due to gate capacitance) and lack of inherent saturation voltage require updated timing analysis and gate discharge paths.

What is the maximum safe operating frequency for PWM switching with the 2N7000?

Based on t_r/t_f ≈ 15/8 ns and Q_g = 1.4 nC, the 2N7000 supports clean PWM operation up to ~500 kHz with appropriate gate drive strength (≤ 100 Ω series resistance). Above this, switching losses increase significantly, limiting practical use to ≤ 200 kHz for thermally constrained TO-92 layouts.