NXP Semiconductors 2N7000,126

Overview

2N7000,126 from Nexperia (formerly Philips Semiconductors) is an N-channel enhancement-mode MOSFET using TrenchMOS™ technology in a through-hole SOT54 (TO-92 variant) package. It delivers 60 V V_DS, 300 mA I_D (DC), 5 Ω R_DS(on) at V_GS = 10 V, 150 °C maximum junction temperature, and logic-level gate drive compatibility - enabling use in low-voltage relay drivers and discrete switching stages.

For engineers reviewing the 2N7000,126 datasheet, 2N7000,126 pinout, 2N7000,126 application, or 2N7000,126 equivalent, this page provides verified pin assignments, thermal derating curves, safe operating area boundaries, gate threshold behavior across temperature, and validated alternatives for relay interface, level translation, and line driving circuits.

Technical Context

The 2N7000,126 employs TrenchMOS™ architecture to achieve low R_DS(on) with fast switching (t_on = 3 ns, t_off = 12 ns) and high transconductance (g_fs = 300 mS typical). Its gate threshold voltage ranges from 0.6 V to 3.5 V across −55 °C to +150 °C, supporting reliable turn-on at 4.5 V logic levels.

It features integrated source-drain diode with 300 mA forward current rating, 30 ns reverse recovery time, and 30 nC recovered charge - enabling bidirectional transient handling in inductive load switching. Thermal resistance from junction-to-ambient is 150 K/W in vertical mounting with ≤5 mm lead length.

Key Specifications

Pinout & Package

SOT54 (TO-92 variant) plastic single-ended leaded through-hole package with 3 leads; body dimensions 4.8 × 4.2 × 14.5 mm (L × E × L); lead pitch 2.54 mm; standard TO-92 footprint compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with NSS01020LT1G and DMN2004K-7, the 2N7000,126 uniquely supports 60 V operation in a through-hole package - making it irreplaceable in legacy relay and industrial interface designs where voltage margin and mechanical robustness are required.

Availability

2N7000,126 is available at Aetrix Electronics and suitable for relay driver circuits, logic level translation, high-speed line driving, and microcontroller peripheral switching requiring stable component supply across industrial, test equipment, and educational applications.

Supply support for 2N7000,126 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia, formerly Philips Semiconductors, is a global leader in discrete semiconductors, specializing in high-volume, high-reliability components for automotive, industrial, and consumer electronics.

The 2N7000,126 belongs to Nexperia's legacy TrenchMOS™ small-signal MOSFET product line, designed specifically for cost-sensitive, low-power switching applications requiring logic-level drive and robust thermal performance in through-hole packages.

FAQ

What is the maximum continuous drain current for the 2N7000,126 at 100 °C ambient temperature?

The 2N7000,126 supports 190 mA continuous drain current at T_amb = 100 °C with V_GS = 10 V, as specified in Table 3 of the datasheet. This reflects thermal derating from its 300 mA rating at 25 °C, governed by its 150 K/W junction-to-ambient thermal resistance and 150 °C maximum junction temperature. Operation above this current requires heatsinking or forced airflow.

Does the 2N7000,126 have a built-in body diode, and what are its key parameters?

Yes, the 2N7000,126 integrates a source-drain body diode with 300 mA DC forward current rating (I_S), 1.5 V maximum forward voltage (V_SD) at 300 mA, 30 ns reverse recovery time (t_rr), and 30 nC recovered charge (Q_r). These values enable effective flyback energy handling in relay and solenoid drivers without external diodes, as confirmed in Table 5 and Figure 13 of the datasheet.

Can the 2N7000,126 be driven directly by a 3.3 V microcontroller GPIO pin?

Yes, the 2N7000,126 is logic-level compatible: its gate-source threshold voltage (V_GS(th)) is 2 V typical at 25 °C and remains ≤3.5 V down to −55 °C, ensuring full enhancement with 3.3 V drive. At V_GS = 4.5 V, R_DS(on) is 5.3 Ω max - sufficient for most low-current switching tasks. No external level shifter is needed for 3.3 V or 5 V control.

What is the safe operating area (SOA) limitation for pulsed drain current in the 2N7000,126?

The 2N7000,126 has a peak drain current (I_DM) rating of 1.3 A for pulses ≤10 µs at T_amb = 25 °C, as defined in Table 3. This SOA boundary is constrained by both thermal inertia and bondwire limits. For longer pulses, current must be reduced per Figure 3 - e.g., ≤300 mA for DC, ≤190 mA at 100 °C ambient - to avoid junction overheating or metallization failure.

Is the 2N7000,126 RoHS compliant and halogen-free?

Yes, the 2N7000,126 meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's standard qualification. The device carries the "126" suffix per JEDEC, indicating lead-free (Pb-free) termination and green molding compound. Full compliance documentation is available in Nexperia's product change notices and material declarations.