UMW 2N7002

Overview

2N7002 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in SOT23-3L package, rated for 60 V drain-source voltage, <1.8 Ω R_DS(on) at V_GS = 10 V, 0.20 A continuous drain current, and optimized for low-threshold switching in space-constrained DC-DC load switches and signal routing circuits.

For engineers reviewing the 2N7002 datasheet, 2N7002 pinout, 2N7002 application, or 2N7002 equivalent, key selection criteria include gate threshold voltage (1–3 V), pulsed drain current capability (1 A), thermal resistance (357.1 °C/W), and compatibility with 3.3 V logic-level drive in low-power digital interface switching.

Technical Context

This device uses ST's second-generation STripFET™ process with single-feature-size strip architecture, enabling high cell density and rugged avalanche performance. Its low gate charge (1.4 nC total) and fast switching (t_d(on) = 5 ns, t_f = 8 ns) support efficient operation in high-frequency PWM control paths.

The MOSFET exhibits a typical forward transconductance of 0.6 S and reverse recovery characteristics (t_rr = 32 ns, Q_rr = 25 nC) suitable for inductive load commutation in non-synchronous buck stages and relay drivers.

Key Specifications

Pinout & Package

SOT23-3L surface-mount plastic package with gull-wing leads, JEDEC-compliant footprint, and ECOPACK® lead-free interconnect. Designed for automated pick-and-place assembly and reflow soldering per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004LK-7 and BS170, the 2N7002 offers balanced trade-offs: tighter V_GS(th) distribution than BS170 and lower gate charge than DMN2004LK-7, making it optimal for fast-switching, logic-level-driven load control in space-limited designs.

Availability

2N7002 is available at Aetrix Electronics and suitable for USB power switching, IoT sensor node load control, and industrial PLC I/O expansion requiring stable component supply across design-in, prototyping, and volume production phases.

Supply support for 2N7002 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering silicon solutions for automotive, industrial, and consumer markets with emphasis on energy efficiency and system integration.

The 2N7002 belongs to ST's general-purpose Power MOSFET product line, engineered for cost-sensitive, low-voltage switching applications where reliability, logic-level compatibility, and standardized packaging are critical.

FAQ

Is the 2N7002 suitable for driving a 12 V relay coil?

Yes - the 2N7002 can reliably switch typical 12 V relay coils drawing ≤200 mA. Its 60 V V_DSS, 1 A pulsed drain rating, and built-in source-drain diode (V_SD = 1.2 V) provide adequate margin for inductive kickback. Use a 10 kΩ gate pull-down and 100 Ω series resistor to ensure clean turn-off and ESD protection.

What is the maximum PCB trace width needed for thermal performance?

No minimum trace width is specified, but ST recommends mounting the SOT23-3L on ≥1 inch² of 2 oz copper for optimal thermal performance. With that layout, the junction-to-ambient thermal resistance drops to ~357.1 °C/W, allowing ~100 mW continuous dissipation before exceeding 125 °C junction temperature at 25 °C ambient.

Does the 2N7002 have integrated ESD protection?

No - the 2N7002 has no integrated ESD protection diodes. Its gate oxide is rated for ±18 V absolute maximum, but real-world handling requires external protection: a 10 kΩ gate resistor plus 5.6 V Zener clamp to source is recommended for environments with >2 kV HBM risk.

Can the 2N7002 replace the 2N7000 in existing designs?

Only if drain current is ≤0.20 A and package constraints allow SOT23-3L. The 2N7002 shares V_DSS and V_GS(th) with the 2N7000 but has lower I_D (0.20 A vs. 0.35 A) and different package (SOT23-3L vs. TO-92). Electrical substitution is valid for low-current logic switching; mechanical replacement requires footprint redesign.