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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. 2N7002AKQB-QZ

Name: 2N7002AKQB-QZ
Brand: Nexperia USA Inc.
SKU: 2N7002AKQB-QZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002AKQB-QZ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2N7002AKQB-QZ.pdf

Description:: 2N7002AKQB-Q/SOT8015/DFN1110D-

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Inventory:5,000

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Product details

Overview

2N7002AKQB-QZ from Nexperia is a 60 V, 340 mA N-channel Trench MOSFET in a DFN1110D-3 (SOT8015) leadless package, featuring logic-level gate drive (V_GS(th) = 1.3–2.6 V), R_DS(on) = 2.1 Ω @ V_GS = 10 V / I_D = 100 mA, and AEC-Q101 qualification for automotive reliability. It serves as a low-side load switch or high-speed line driver in space-constrained PCBs requiring side-wettable flanks for optical solder inspection.

For engineers reviewing the 2N7002AKQB-QZ datasheet, 2N7002AKQB-QZ pinout, 2N7002AKQB-QZ application, or 2N7002AKQB-QZ equivalent, this device is selected for logic-compatible switching at ≤60 V with thermal robustness up to T_j = 175 °C, ESD protection (HBM 500 V), and validated performance on FR4 with 1 cm² drain pad.

Technical Context

This discrete MOSFET uses Trench technology to achieve low R_DS(on) and fast switching (t_d(on) = 1 ns, t_f = 6 ns) while maintaining stable threshold voltage (V_GS(th) = 1.7 V typ.) across temperature. Its ultra-thin DFN1110D-3 package enables high-density routing and automated optical inspection via side-wettable flanks.

The device operates as a unidirectional enhancement-mode switch with integrated source-drain diode (V_SD = 1.0–1.6 V @ I_S = 210 mA), supports peak drain current of 4 A (10 µs pulse), and delivers avalanche ruggedness of 6.4 mJ under unclamped conditions - critical for inductive load handling in automotive relay drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus switching
R_DS(on)	2.1 Ω @ V_GS = 10 V, I_D = 100 mA - Enables <100 mW conduction loss at 340 mA DC load
V_GS(th)	1.3–2.6 V - Ensures full enhancement with 3.3 V or 5 V logic-level microcontroller outputs
I_D (cont.)	340 mA @ T_amb = 25 °C - Sustains typical LED driver or sensor interface loads without heatsinking
T_j max	175 °C - Supports operation in under-hood automotive environments and sealed industrial enclosures
ESD HBM	500 V - Provides built-in protection against handling discharge during assembly
AEC-Q101	Qualified - Meets stress test requirements for discrete semiconductors in automotive applications

Pinout & Package

Package: DFN1110D-3 (SOT8015), 1.1 mm × 1.0 mm × 0.48 mm body, leadless, side-wettable flanks, 0.65 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal accepting logic-level voltage to modulate channel conduction; requires <0.315 nC total gate charge for full turn-on
2	S (Source)	Reference node for gate drive and current return path; tied to system ground in low-side configurations
3	D (Drain)	High-side connection point for switched load; thermally connected to exposed drain pad for enhanced heat dissipation

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.6 V ensures compatibility with 3.3 V MCU GPIO without level-shifting circuitry
Side-wettable flanks	Enables automated optical inspection (AOI) of solder joints on bottom-side terminations in fine-pitch SMT assembly
Thermal resistance R_th(j-sp)	17–22 K/W - Low junction-to-solder-point resistance improves thermal coupling to PCB copper
Avalanche energy rating	6.4 mJ (unclamped) - Allows safe interruption of inductive currents in relay and solenoid drive applications
Extended temperature range	Operates continuously from –55 °C to +175 °C junction temperature per AEC-Q101 stress testing

Applications

Automotive Relay Driver

Industrial Sensor Interface

Use Scenario: Driving 12 V automotive relays in body control modules where space and thermal margin are constrained.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; turns on/off within nanoseconds to minimize contact arcing.

Use Value: AEC-Q101 qualification and 175 °C T_j ensure reliability in under-dash environments; R_DS(on) < 2.8 Ω limits self-heating at 300 mA coil current.

Use Scenario: Isolating and enabling analog sensor power rails (e.g., pressure, temperature) in programmable logic controllers.

IC Role / Device Role / Timing Role: Load switch managing sensor V_CC supply; activated only during measurement cycles to reduce system standby power.

Use Value: Logic-level gate allows direct MCU control; low leakage (<500 nA @ 25 °C) prevents unintended sensor biasing during sleep mode.

USB-C Port Power Switch

LED Backlight Dimming

Use Scenario: Controlling V_BUS enable path in USB-C receptacle circuits requiring overvoltage and ESD resilience.

IC Role / Device Role / Timing Role: High-side or low-side power switch placed between upstream power source and port connector.

Use Value: 60 V V_DS withstands transient surges; 500 V HBM ESD rating protects against plug/unplug events without external TVS.

Use Scenario: PWM-controlled current sink for monochrome LED strings in industrial HMIs and status indicators.

IC Role / Device Role / Timing Role: Fast-switching low-side current regulator operating at 1–10 kHz PWM frequencies.

Use Value: 1 ns turn-on delay and 6 ns fall time support clean dimming waveforms; R_DS(on) stability over temperature maintains consistent brightness.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004KQ-7	R_DS(on) = 2.4 Ω @ V_GS = 4.5 V; same DFN1110D-3 package; no AEC-Q101 qualification	Targeted at commercial-grade consumer electronics, not automotive systems	Select when AEC-Q101 is not required and 4.5 V drive suffices
NTMFS4C06NT1G	R_DS(on) = 1.9 Ω @ V_GS = 10 V; SO-8 package (larger footprint); AEC-Q101 qualified	Used where higher current (12 A) and board area allow larger packages	Choose for higher-power loads needing >340 mA continuous current and legacy SO-8 layout compatibility

Compared with DMN2004KQ-7, the 2N7002AKQB-QZ adds automotive qualification and tighter V_GS(th) distribution; versus NTMFS4C06NT1G, it trades lower current capability for 60% smaller PCB area and optimized logic-level response.

Availability

2N7002AKQB-QZ is available at Aetrix Electronics and suitable for automotive relay drivers, industrial sensor interfaces, USB-C power switches, and LED backlight dimming circuits requiring stable component supply, AEC-Q101 compliance, and ultra-compact packaging.

Supply support for 2N7002AKQB-QZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging technologies.

The 2N7002AKQB-QZ belongs to Nexperia's TrenchMOS logic-level portfolio, engineered specifically for space-constrained automotive and industrial switching applications demanding robustness, low gate charge, and AOI-compatible packaging.

FAQ

What is the maximum continuous drain current at 100 °C ambient temperature?

The 2N7002AKQB-QZ supports 240 mA continuous drain current at T_amb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the DFN1110D-3 package on standard FR4 with single-sided copper; actual current depends on PCB copper area and airflow.

Does the device include an integrated body diode, and what are its characteristics?

Yes - the MOSFET integrates a source-drain diode with forward voltage V_SD = 1.0–1.6 V at I_S = 210 mA and reverse recovery time t_rr = 7 ns. This diode enables freewheeling in inductive switching but is not rated for continuous reverse conduction above 340 mA.

Can the 2N7002AKQB-QZ be used in high-frequency PWM applications above 1 MHz?

No - its gate charge parameters (Q_G(tot) = 0.21–0.315 nC) and output capacitance (C_oss = 1.6 pF) support efficient switching up to ~500 kHz. Above this frequency, switching losses increase significantly due to limited dV/dt and di/dt capability in the DFN1110D-3 thermal profile.

Is the marking code 'QK' sufficient to identify the 2N7002AKQB-QZ on the physical device?

Yes - per Table 4, the top-side laser marking 'QK' uniquely identifies the 2N7002AKQB-QZ variant. This code distinguishes it from non-automotive or non-SWF versions (e.g., standard 2N7002 series marked 'B2') and confirms side-wettable flank construction and AEC-Q101 qualification.

2N7002AKQB-QZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2N7002AKQB-QZ FAQ

1.How can I place an order for 2N7002AKQB-QZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002AKQB-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002AKQB-QZ reliable?

The price and inventory of 2N7002AKQB-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002AKQB-QZ is usually 5 days.

3.What payment methods are accepted for 2N7002AKQB-QZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002AKQB-QZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002AKQB-QZ?

2N7002AKQB-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002AKQB-QZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002AKQB-QZ?

For technical support, including 2N7002AKQB-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002AKQB-QZ requirements.

6.How does Aetrix verify that 2N7002AKQB-QZ is sourced from the original manufacturer or authorized distributors?

All 2N7002AKQB-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002AKQB-QZ meets industry standards.

7.What is the process for return or replacement of 2N7002AKQB-QZ?

All 2N7002AKQB-QZ units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002AKQB-QZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002AKQB-QZ part is unused and in its original packaging.

Return procedure for 2N7002AKQB-QZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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