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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. 2N7002BKMB,315

Name: 2N7002BKMB,315
Brand: Nexperia USA Inc.
SKU: 2N7002BKMB,315
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002BKMB,315

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 3-XFDFN

Datasheet:: 2N7002BKMB,315.pdf

Description:: MOSFET N-CH 60V 450MA DFN1006B-3

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Product details

Overview

2N7002BKMB,315 from Nexperia is a single N-channel enhancement-mode Trench MOSFET in a DFN1006B-3 (SOT883B) package, rated for 60 V V_DS, 450 mA I_D at 25 °C, and 1 Ω R_DS(on) at V_GS = 10 V. It serves as a low-side load switch or high-speed line driver in space-constrained PCBs requiring logic-level gate drive and ultra-thin profile (0.37 mm height).

For engineers reviewing the 2N7002BKMB,315 datasheet, 2N7002BKMB,315 pinout, 2N7002BKMB,315 application, or 2N7002BKMB,315 equivalent, this device is selected for compact DC-DC enable paths, relay drivers with fast switching (<10 ns rise time), and ESD-hardened (2 kV HBM) digital signal routing where thermal resistance to ambient (150 K/W on standard FR4) and sub-1Ω on-resistance are critical.

Technical Context

This MOSFET uses Trench MOSFET technology to achieve low R_DS(on) and fast switching with minimal gate charge (0.5 nC total). Its gate-source threshold voltage (1.1–2.1 V) ensures reliable turn-on with 3.3 V or 5 V logic, while its 60 V breakdown rating supports industrial and consumer power rail switching up to 48 V systems.

The device integrates an intrinsic source-drain diode (V_SD = 0.47–1.1 V at 115 mA), enabling bidirectional current handling in certain configurations. Thermal performance is defined for two mounting conditions: standard footprint (R_th(j-a) = 305 K/W) and enhanced drain pad (150 K/W), allowing designers to select layout strategy based on power dissipation requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports operation across 24 V and 48 V nominal supply rails without breakdown risk.
R_DS(on)	1 Ω (typ.) at V_GS = 10 V, I_D = 450 mA - Enables <100 mW conduction loss at 300 mA, suitable for battery-powered load switching.
Q_G(tot)	0.5 nC (typ.) - Allows fast switching with low gate drive power, reducing dynamic losses in PWM applications.
V_GS(th)	1.6 V (typ.) - Ensures full enhancement with 3.3 V microcontroller GPIO, eliminating need for level-shifting.
ESD Rating	2 kV HBM - Provides robustness against handling and board-level electrostatic discharge without external protection.
T_j Range	−55 °C to 150 °C - Validated for extended industrial temperature operation including automotive under-hood adjacent zones.
Package Height	0.37 mm - Fits beneath stacked connectors or in ultra-thin portable electronics where Z-axis clearance is constrained.

Pinout & Package

2N7002BKMB,315 is housed in a leadless DFN1006B-3 (SOT883B) package measuring 1.0 × 0.6 × 0.37 mm, optimized for high-density SMT assembly and thermal performance via exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control input; requires ≤20 V swing; low input capacitance (33 pF C_iss) minimizes driver loading.
2	Source (S)	Reference node for gate drive; tied to system ground in low-side configuration; carries full load current.
3	Drain (D)	High-side connection point; electrically and thermally connected to exposed copper pad for heat dissipation and current routing.

Key Features

Feature	Design Value
Ultra-thin profile	0.37 mm height enables integration into wearables, hearing aids, and slim IoT sensors where vertical space is limited.
Logic-level compatible	V_GS(th) ≤ 2.1 V ensures direct drive from 3.3 V MCU outputs without gate driver ICs, reducing BOM count.
Fast switching	tr = 6 ns, tf = 7 ns - Reduces transition losses in high-frequency (>1 MHz) PWM control of LEDs or small solenoids.
Trench MOSFET architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, improving power density in miniaturized DC-DC enable circuits.
ESD protection	2 kV HBM rating eliminates need for discrete TVS on gate line in most consumer-grade PCB layouts.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving the coil of a 5 V or 12 V electromagnetic relay in PLC I/O modules or smart home controllers.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current path; operates in saturated on-state with minimal voltage drop.

Use Value: 1 Ω R_DS(on) limits coil voltage drop to <450 mV at 450 mA, ensuring reliable relay pull-in; fast turn-off (24 ns t_d(off)) prevents contact bounce during de-energization.

Use Scenario: Transmitting TTL/CMOS signals across short PCB traces or flexible cables in test equipment or modular instrumentation.

IC Role / Device Role / Timing Role: Digital buffer amplifier with active pull-down; complements passive pull-up resistors in open-drain bus interfaces.

Use Value: 6 ns rise time and 7 ns fall time preserve signal edge integrity up to 50 MHz; low C_oss (7 pF) minimizes capacitive loading on driven lines.

Low-Side Load Switch

Switching Circuits

Use Scenario: Enabling/disabling power to peripheral modules (e.g., sensors, radios) in battery-powered edge nodes to minimize quiescent current.

IC Role / Device Role / Timing Role: Controlled series pass element between V_IN and load; operated in linear or switched mode depending on duty cycle.

Use Value: 10 µA I_DSS leakage at 60 V ensures <1 µW standby loss; 0.37 mm height allows placement directly beneath module connectors.

Use Scenario: Implementing discrete logic-level translation or polarity inversion in FPGA I/O banks or microcontroller expansion headers.

IC Role / Device Role / Timing Role: Active transistor in simple inverter or level shifter topology; biased in saturation or cutoff by digital control signals.

Use Value: 1.6 V V_GS(th) max guarantees consistent switching across process/voltage/temperature corners; 33 pF C_iss enables clean toggling at >20 MHz clock rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	R_DS(on) = 1.4 Ω (typ.) at V_GS = 4.5 V; same DFN1006 package; higher gate threshold (1.5–2.5 V).	Slightly slower turn-on due to higher Q_G (0.7 nC); less margin for 3.3 V logic drive at temperature extremes.	Select when tighter V_GS(th) distribution is required or when sourcing from Diodes Inc. preferred supply chain.
NTNS0P023PZ	R_DS(on) = 0.9 Ω (typ.) at V_GS = 4.5 V; same SOT883B footprint; lower V_GS(th) (0.5–1.2 V) increases risk of partial turn-on with noise.	Better conduction efficiency below 4.5 V gate drive but requires careful noise filtering on gate line to prevent unintended conduction.	Select for ultra-low-voltage systems (e.g., 2.5 V MCU rails) where guaranteed turn-on at 2.8 V is essential.

Compared with DMN2004K-7 and NTNS0P023PZ, the 2N7002BKMB,315 offers balanced gate drive compatibility (1.6 V typ. V_GS(th)), proven 2 kV ESD robustness, and industry-standard thermal derating curves-making it the preferred choice for general-purpose logic-level switching where reliability and layout flexibility outweigh marginal R_DS(on) differences.

Availability

2N7002BKMB,315 is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and discrete switching circuits requiring stable component supply across industrial automation, consumer electronics, and IoT edge device production.

Supply support for 2N7002BKMB,315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets, with manufacturing rooted in process innovation and quality rigor.

The 2N7002BKMB,315 belongs to Nexperia's TrenchMOS family-designed specifically for space-constrained, high-efficiency switching applications where low R_DS(on), fast switching, and logic-level compatibility are mandatory.

FAQ

What is the maximum continuous drain current for 2N7002BKMB,315 at 100 °C ambient?

The maximum continuous drain current is 220 mA at T_amb = 100 °C with V_GS = 10 V, as specified in the Limiting Values table. This derating reflects thermal constraints of the DFN1006B-3 package on standard FR4 PCBs without enhanced copper pour.

Does 2N7002BKMB,315 require a gate resistor for typical 3.3 V MCU drive?

No external gate resistor is required for basic on/off switching with 3.3 V microcontrollers, as the device's low input capacitance (33 pF C_iss) and logic-level threshold ensure clean turn-on. A 10–100 Ω resistor may be added only if EMI reduction or ringing suppression is needed in high-noise environments.

Can 2N7002BKMB,315 be used in avalanche energy applications?

No-this device is not rated or characterized for repetitive avalanche operation. The datasheet specifies only unclamped inductive switching (UIS) capability indirectly via peak drain current (I_DM = 1.8 A), and no avalanche energy (E_AS) value is provided. It must be operated within SOA limits shown in Figure 4.

Is the drain pad of 2N7002BKMB,315 electrically isolated from other terminals?

No-the drain terminal (Pin 3) is directly connected to the exposed metal pad on the bottom of the DFN1006B-3 package. This pad must be soldered to a dedicated PCB copper area for both electrical connection and thermal dissipation; it is not insulated or isolated.

2N7002BKMB,315 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 450mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.6Ohm @ 450mA, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DFN1006B-3

2N7002BKMB,315 FAQ

1.How can I place an order for 2N7002BKMB,315 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002BKMB,315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002BKMB,315 reliable?

The price and inventory of 2N7002BKMB,315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002BKMB,315 is usually 5 days.

3.What payment methods are accepted for 2N7002BKMB,315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002BKMB,315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002BKMB,315?

2N7002BKMB,315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002BKMB,315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002BKMB,315?

For technical support, including 2N7002BKMB,315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002BKMB,315 requirements.

6.How does Aetrix verify that 2N7002BKMB,315 is sourced from the original manufacturer or authorized distributors?

All 2N7002BKMB,315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002BKMB,315 meets industry standards.

7.What is the process for return or replacement of 2N7002BKMB,315?

All 2N7002BKMB,315 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002BKMB,315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002BKMB,315 part is unused and in its original packaging.

Return procedure for 2N7002BKMB,315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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