Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

NXP Semiconductors 2N7002BKT,115

Part No.:
2N7002BKT,115
Manufacturer:
NXP Semiconductors
Category:
FETs, MOSFETs
Package:
SC-75, SOT-416
Datasheet:
Aetrix2N7002BKT,115.pdf
Description:
MOSFET N-CH 60V 290MA SC75
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,571

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N7002BKT from Nexperia is an N-channel enhancement-mode Trench MOSFET in SOT416 (SC-75) package, rated for 60 V drain-source voltage, 290 mA continuous drain current at 25 °C, and 1.0 Ω typical RDS(on) at VGS = 10 V. It serves as a low-side load switch or high-speed line driver in compact power management circuits.

For engineers reviewing the 2N7002BKT datasheet, 2N7002BKT pinout, 2N7002BKT application, or 2N7002BKT equivalent, this page delivers verified electrical parameters, thermal behavior, AEC-Q101 qualification status, ESD robustness (2 kV HBM), and logic-level gate drive compatibility - all critical for automotive and industrial switching designs.

Technical Context

This discrete MOSFET uses Trench MOSFET technology to achieve fast switching (td(on) = 5 ns typ., tf = 7 ns typ.) and low on-resistance with logic-level gate drive (VGS(th) = 1.1–2.1 V). Its 3-pin SOT416 package supports surface-mount assembly on FR4 PCBs with standard footprint and 1 cm² drain pad for thermal management.

The device operates across −55 °C to +150 °C ambient temperature, with junction temperature limited to 150 °C. It features integrated source-drain diode (VSD = 0.47–1.1 V at IS = 115 mA) and exhibits 33–50 pF input capacitance (Ciss) at 10 V VDS, enabling efficient gate charge control (QG(tot) = 0.5–0.6 nC).

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - Supports rail voltages up to 48 V DC systems with margin for transients.
ID (continuous)290 mA at Tamb = 25 °C - Suitable for low-power switching loads like LED drivers or sensor biasing.
RDS(on)1.0 Ω typ. at VGS = 10 V - Delivers <100 mW conduction loss at 300 mA, minimizing self-heating.
VGS(th)1.1–2.1 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting.
ESD rating2 kV HBM - Provides robust handling during board assembly and system integration.
AEC-Q101Qualified - Validated for automotive-grade reliability in under-hood and infotainment applications.
Ptot320 mW on FR4 with 1 cm² drain pad - Enables operation without heatsinking in space-constrained layouts.

Pinout & Package

SOT416 (SC-75) is a 3-pin ultra-small surface-mount plastic package measuring 1.7 mm × 1.4 mm × 0.55 mm, optimized for high-density PCB layouts and reflow soldering per JEDEC J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
1G (Gate)Controls channel conduction; requires ≤±20 V drive; logic-compatible with 3.3 V/5 V systems.
2S (Source)Reference node for gate drive and current return path; tied to ground in low-side configurations.
3D (Drain)High-side connection point for switched load; thermally coupled to PCB pad for dissipation.

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced with VGS ≥ 4.5 V, eliminating need for external gate drivers in MCU-based designs.
Trench MOSFET architectureDelivers lower RDS(on) and higher transconductance (gfs = 550 mS typ.) versus planar alternatives.
Fast switching performanceCombined td(on) + tr + td(off) + tf < 30 ns enables >10 MHz PWM operation in digital power stages.
ESD protectionIntegrated 2 kV HBM protection reduces need for external TVS components in I/O interface circuits.
AEC-Q101 qualificationValidated for automotive applications including body electronics, lighting, and ADAS subsystems.

Applications

Relay DriverHigh-Speed Line Driver

Use Scenario: Replacing electromechanical relays in automotive door lock modules and HVAC actuators.

IC Role / Device Role / Timing Role: Low-side switch controlling coil current; handles repetitive 100 ms pulses at 12 V.

Use Value: Eliminates relay bounce, wear-out, and acoustic noise while reducing PCB area by >70% vs. relay + flyback diode solution.

Use Scenario: Driving 50 Ω transmission lines in industrial PLC I/O modules and sensor interface boards.

IC Role / Device Role / Timing Role: Digital signal buffer with controlled edge rates; toggles between 0 V and 3.3 V at >5 MHz.

Use Value: Achieves <10 ns rise/fall times with minimal overshoot, supporting clean signal integrity without external termination.

Low-Side Load SwitchSwitching Circuit

Use Scenario: Power gating of USB peripherals or display backlight LEDs in portable medical devices.

IC Role / Device Role / Timing Role: Controlled power path switch activated by microcontroller GPIO; supports hot-swap sequencing.

Use Value: Limits inrush current via inherent RDS(on) slope and avoids latch-up risk due to low gate charge (0.5 nC).

Use Scenario: Building discrete half-bridge topologies for small DC-DC converters in IoT edge nodes.

IC Role / Device Role / Timing Role: High-side or low-side switch in synchronous buck regulators operating at 500 kHz–2 MHz.

Use Value: Enables >90% efficiency at 100–300 mA output with minimal gate drive power (<100 µW average).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2004K-7RDS(on) = 0.85 Ω max at VGS = 4.5 V; SOT-23 package (larger footprint than SOT416)Better drive margin at 3.3 V but requires more PCB area; not AEC-Q101 qualifiedSelect when lower gate threshold stability at elevated temperature is prioritized over automotive compliance.
BSS138BKS,115RDS(on) = 3.5 Ω min at VGS = 10 V; same SOT416 package; AEC-Q101 qualifiedHigher on-resistance limits use to <100 mA loads; slower switching (tf = 20 ns)Choose for cost-sensitive, low-current applications where thermal budget allows higher conduction loss.

Compared with DMN2004K-7 and BSS138BKS,115, the 2N7002BKT offers optimal balance of AEC-Q101 qualification, 1.0 Ω RDS(on), and ultra-compact SOT416 packaging - making it preferred for space-constrained automotive and industrial switching where both reliability and size matter.

Availability

2N7002BKT is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC I/O modules, and portable medical device power management requiring stable component supply and long-term lifecycle support.

Supply support for 2N7002BKT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The 2N7002BKT belongs to Nexperia's TrenchMOS portfolio, engineered specifically for high-reliability, low-voltage switching applications demanding logic-level drive, fast response, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current rating for the 2N7002BKT at 100 °C ambient temperature?

The 2N7002BKT supports 200 mA continuous drain current at Tamb = 100 °C, derated from its 290 mA rating at 25 °C per the normalized current curve in the datasheet. This reflects thermal limitations of the SOT416 package on standard FR4 PCBs without enhanced copper pours.

Does the 2N7002BKT have integrated ESD protection, and what is its rating?

Yes, the 2N7002BKT includes on-chip ESD protection rated at 2000 V per the Human Body Model (HBM), as confirmed in Table 5 of the official Nexperia datasheet. This eliminates the need for external ESD clamps in most board-level implementations.

Is the 2N7002BKT pin-compatible with the industry-standard 2N7002 series?

Yes, the 2N7002BKT shares identical SOT416 (SC-75) pinout (G-S-D) and mechanical dimensions with other 2N7002 variants, including the original 2N7002 and 2N7002E. However, electrical parameters such as RDS(on) and VGS(th) differ, so functional substitution requires validation.

What is the gate threshold voltage range for the 2N7002BKT, and how does it affect microcontroller interfacing?

The 2N7002BKT has a gate-source threshold voltage (VGS(th)) of 1.1–2.1 V at ID = 250 µA, ensuring full enhancement with 3.3 V or 5 V GPIO outputs. This allows direct drive from most microcontrollers without level-shifting circuitry, simplifying design and reducing BOM count.

Can the 2N7002BKT be used in automotive applications, and what qualification does it hold?

Yes, the 2N7002BKT is AEC-Q101 qualified, confirming its suitability for automotive applications including body control modules, lighting, and infotainment systems. This qualification covers stress testing for temperature cycling, humidity, and mechanical shock per automotive reliability standards.

2N7002BKT,115 Specifications

Product attributes
Attribute value
Manufacturer:
NXP Semiconductors
Series:
-
Package/Case:
SC-75, SOT-416
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
290mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
260mW (Ta)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-75

2N7002BKT,115 FAQ

1.How can I place an order for 2N7002BKT,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002BKT,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002BKT,115 reliable?

The price and inventory of 2N7002BKT,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002BKT,115 is usually 5 days.

3.What payment methods are accepted for 2N7002BKT,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002BKT,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002BKT,115?

2N7002BKT,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002BKT,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002BKT,115?

For technical support, including 2N7002BKT,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002BKT,115 requirements.

6.How does Aetrix verify that 2N7002BKT,115 is sourced from the original manufacturer or authorized distributors?

All 2N7002BKT,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002BKT,115 meets industry standards.

7.What is the process for return or replacement of 2N7002BKT,115?

All 2N7002BKT,115 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002BKT,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002BKT,115 part is unused and in its original packaging.

Return procedure for 2N7002BKT,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N7002BKT,115 Tags

  • 2N7002BKT,115
  • 2N7002BKT,115 PDF
  • 2N7002BKT,115 Datasheet
  • 2N7002BKT,115 Specifications
  • 2N7002BKT,115 Images
  • NXP Semiconductors
  • NXP Semiconductors 2N7002BKT,115
  • Buy 2N7002BKT,115
  • 2N7002BKT,115 Price
  • 2N7002BKT,115 Distributor
  • 2N7002BKT,115 Supplier
  • 2N7002BKT,115 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER