My Inquiry
My Account
Nexperia USA Inc. 2N7002BKV,115
- Part No.:
- 2N7002BKV,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
2N7002BKV,115.pdf
- Description:
- MOSFET 2N-CH 60V 0.34A SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:33,724
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2N7002BKV from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT666 package, rated for 60 V drain-source voltage and 340 mA continuous drain current per transistor, with 1.0 Ω typical RDS(on) at VGS = 10 V, logic-level gate drive compatibility, and ESD protection up to 2 kV - used in compact low-side load switching and high-speed line driver circuits.
For engineers reviewing the 2N7002BKV datasheet, 2N7002BKV pinout, 2N7002BKV application, or 2N7002BKV equivalent, this device is selected for space-constrained dual-switching nodes requiring fast turn-on/turn-off (td(on) = 5 ns, tf = 7 ns), thermal robustness on FR4 PCBs, and stable sub-2 V gate-threshold operation across temperature.
Technical Context
This dual MOSFET integrates two independent N-channel channels in a single ultra-small SOT666 package, sharing no internal connection between transistors - each channel features isolated source, gate, and drain terminals with identical electrical specs. The Trench MOSFET process enables low RDS(on), high transconductance (gfs = 550 mS), and tight VGS(th) distribution (1.1–2.1 V).
It operates with logic-compatible gate drive (VGS(th) ≤ 2.1 V, fully enhanced at 4.5 V), supports pulsed peak drain current up to 1.2 A, and maintains safe operating area (SOA) compliance up to 60 V and 340 mA under DC and transient conditions per transistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage per transistor; supports 24 V and 48 V rail switching without derating. |
| ID (continuous) | 340 mA @ Tamb = 25 °C - Sustained load current capability per channel on standard FR4 PCB. |
| RDS(on) | 1.0 Ω typ @ VGS = 10 V, ID = 500 mA - Low conduction loss enabling <100 mW dissipation at 300 mA. |
| VGS(th) | 1.6 V typ @ ID = 250 µA - Ensures reliable turn-on with 3.3 V microcontroller GPIOs. |
| QG(tot) | 0.55 nC typ - Enables fast switching with minimal gate drive power (<1 µW at 1 MHz). |
| tf / tr | 7 ns / 6 ns - Supports >50 MHz digital switching in line-driver and relay-driver topologies. |
| ESD HBM | 2 kV - Robust handling during board assembly and system integration without external protection. |
Pinout & Package
SOT666 plastic surface-mount package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body; optimized for high-density routing and thermal relief via drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor 1 - referenced to local ground or return path for first switch. |
| 2 | G1 | Gate terminal of transistor 1 - driven by logic-level signal; requires no level-shifting for 3.3 V/5 V control. |
| 3 | D2 | Drain terminal of transistor 2 - connects to load or supply rail for second independent switching node. |
| 4 | S2 | Source terminal of transistor 2 - electrically isolated from S1; enables dual low-side or floating configurations. |
| 5 | G2 | Gate terminal of transistor 2 - independently controllable; supports asynchronous dual-switch timing. |
| 6 | D1 | Drain terminal of transistor 1 - routed separately from D2; allows independent load connections per channel. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 2.1 V ensures full enhancement with 3.3 V MCU outputs - eliminates need for gate drivers in portable systems. |
| Ultra-fast switching | td(on)/tf = 5 ns/7 ns enables clean edge integrity in 10–50 MHz digital interface applications. |
| Dual independent channels | No internal coupling between transistors - supports isolated load control, complementary switching, or redundancy schemes. |
| Trench MOSFET architecture | Delivers 1.0 Ω RDS(on) and 550 mS gfs in 1.6 mm × 1.2 mm footprint - maximizes power density per mm². |
| ESD-hardened design | 2 kV HBM rating reduces risk of field failure during handling and reflow - lowers test escape rate in high-volume assembly. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving electromagnetic relay coils in industrial PLC I/O modules with 3.3 V microcontroller outputs. IC Role / Device Role / Timing Role: Low-side switch controlling coil current path; handles 300 mA pulses with <10 ns edge fidelity. Use Value: Eliminates discrete BJT + base resistor network; reduces BOM count by 3 components while improving rise time by 4× vs. BC847. |
Use Scenario: Transmitting TTL/CMOS signals across 50 Ω backplanes in test equipment with minimal distortion. IC Role / Device Role / Timing Role: Active pull-down element in push-pull output stage; complements PMOS high-side switch. Use Value: 7 ns fall time preserves signal integrity up to 50 MHz; 1.0 Ω RDS(on) limits overshoot to <0.2 V at 20 mA load. |
| Low-Side Load Switch | Switching Power Supply Auxiliary Control |
Use Scenario: Enabling/disabling 12 V sensor rails in automotive body electronics with strict leakage requirements. IC Role / Device Role / Timing Role: High-side–referenced load switch using inverted configuration; controlled via MCU GPIO. Use Value: IDSS ≤ 1 µA at 60 V ensures <1 µA standby leakage - extends battery life in always-on modules. |
Use Scenario: Controlling synchronous rectifier enable signals and auxiliary bias sequencing in DC-DC converters. IC Role / Device Role / Timing Role: Dual-channel sequencer for gate-drive timing alignment and fault-isolation logic. Use Value: Independent G1/G2 control allows staggered turn-on to suppress cross-conduction; 150 °C Tj rating supports operation near inductors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LK-7 | Higher RDS(on) (1.8 Ω typ), same SOT666, 20 V VDS - lower voltage rating but tighter VGS(th) tolerance (1.0–1.5 V). | Restricted to ≤20 V systems; unsuitable for 48 V bus switching but preferred in 3.3 V IoT sensor nodes with marginal gate drive. | Select when VDS < 20 V and ultra-low threshold consistency outweighs conduction loss. |
| NTJD4152PZ | Same 60 V rating, higher ID (650 mA), larger SOT-363 package (2.1 mm × 1.25 mm), 1.4 Ω RDS(on). | Requires 30% more PCB area; better thermal performance (Rth(j-a) = 220 K/W) but incompatible with ultra-dense layouts. | Choose when higher current headroom and thermal margin justify footprint increase in non-space-constrained designs. |
Compared with DMN2004LK-7 and NTJD4152PZ, the 2N7002BKV uniquely balances 60 V capability, 340 mA current, 1.0 Ω RDS(on), and minimal 1.6 mm × 1.2 mm footprint - making it optimal for dual-switching in wearables, smart meters, and multi-rail PMICs where size and voltage headroom are co-constrained.
Availability
2N7002BKV is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side load switches, and switching power supply auxiliary control requiring stable component supply and long-term manufacturability.
Supply support for 2N7002BKV includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs.
The 2N7002BKV belongs to Nexperia's TrenchMOS dual-FET product line, engineered specifically for space-constrained, logic-driven switching applications in consumer, industrial, and communications equipment.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient?
The 2N7002BKV delivers 240 mA continuous drain current per transistor at Tamb = 100 °C, as specified in Table 5 (Limiting values). This reflects thermal derating from the 340 mA rating at 25 °C, based on Rth(j-a) = 315–360 K/W and junction temperature limit of 150 °C.
Can both transistors be used in parallel for higher current capacity?
No - the 2N7002BKV's dual transistors are electrically isolated but not matched for paralleling. VGS(th) variation (1.1–2.1 V) and RDS(on) spread cause unequal current sharing; parallel use risks thermal runaway. For higher current, select a single-channel part like PMN20XPEA.
Is the SOT666 package lead-free and RoHS-compliant?
Yes - the 2N7002BKV SOT666 package is lead-free, halogen-free, and compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed in Nexperia's official product compliance documentation and material declarations.
Does the device include integrated body diode functionality for flyback energy recovery?
Yes - each channel includes an inherent source-drain diode with VSD = 0.75 V typ at IS = 115 mA and Tj = 25 °C (Table 7). It supports freewheeling in inductive loads but lacks optimized reverse recovery specs; external Schottky diodes are recommended for high-frequency flyback paths.
2N7002BKV,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 340mA
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 10V
- Power - Max:
- 350mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
2N7002BKV,115 FAQ
1.How can I place an order for 2N7002BKV,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N7002BKV,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N7002BKV,115 reliable?
The price and inventory of 2N7002BKV,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002BKV,115 is usually 5 days.
3.What payment methods are accepted for 2N7002BKV,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002BKV,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N7002BKV,115?
2N7002BKV,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N7002BKV,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N7002BKV,115?
For technical support, including 2N7002BKV,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002BKV,115 requirements.
6.How does Aetrix verify that 2N7002BKV,115 is sourced from the original manufacturer or authorized distributors?
All 2N7002BKV,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002BKV,115 meets industry standards.
7.What is the process for return or replacement of 2N7002BKV,115?
All 2N7002BKV,115 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002BKV,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N7002BKV,115 part is unused and in its original packaging.
Return procedure for 2N7002BKV,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N7002BKV,115 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
