Diodes Incorporated 2N7002DWK-13
- Part No.:
- 2N7002DWK-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
2N7002DWK-13.pdf
- Description:
- MOSFET 2N-CH 60V 0.261A SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:7,213
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2N7002DWK-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V VDSS, 3.0Ω RDS(ON) @ VGS = 10V, and 261mA continuous drain current at TA = +25°C. It integrates ESD protection, low gate threshold (1.0–2.0V), and fast switching (tF = 14.3ns) for compact power management in space-constrained motor control circuits.
For engineers reviewing the 2N7002DWK-13 datasheet, 2N7002DWK-13 pinout, 2N7002DWK-13 application, or 2N7002DWK-13 equivalent, key selection criteria include dual-channel integration in SOT363, guaranteed RDS(ON) at 4.5V drive, thermal resistance of 278°C/W on enhanced PCB layout, and compliance with AEC-Q101 stress testing per Diodes' automotive qualification pathway.
Technical Context
This dual MOSFET uses planar silicon process with integrated gate protection diodes per channel and ESD-hardened structure (HBM >2kV). Each channel operates independently with matched VGS(TH) (1.0–2.0V) and exhibits low input capacitance (Ciss = 41pF) for high-frequency PWM control.
Thermal performance is defined for two mounting conditions: 379°C/W (minimum pad) and 278°C/W (1-inch² copper plate). Dynamic parameters-including Qg = 1.04nC @ VGS = 10V and tD(OFF) = 37.8ns-are specified under standardized 150Ω gate drive and 30V VDD.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - supports 24V/48V rail switching without avalanche derating |
| RDS(ON) | 3.0Ω @ VGS = 10V - enables <150mW conduction loss at 200mA load |
| ID (max) | 261mA @ TA = +25°C - suitable for low-power logic-level load switching |
| VGS(TH) | 1.0–2.0V - ensures turn-on with 3.3V GPIO or microcontroller outputs |
| Ciss | 41pF - limits gate drive power and enables >1MHz PWM operation |
| tF | 14.3ns - reduces switching transition losses in DC-DC and motor gate drivers |
| PD | 0.45W (enhanced layout) - allows sustained operation up to +70°C ambient |
Pinout & Package
Package: SOT363 - 6-pin, surface-mount, dual-channel discrete MOSFET package with 0.65mm lead pitch, 2.15mm × 2.10mm footprint, and 0.95mm height. Molded green compound (UL 94V-0), matte tin-plated terminals, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; internally tied to pin 4 in common-source configuration |
| 2 (G1) | Gate of Channel 1 | Control terminal for independent switching of first channel; ESD-protected |
| 3 (D1) | Drain of Channel 1 | High-side connection point for Channel 1; rated for 60V blocking |
| 4 (S2) | Source of Channel 2 | Source node for second MOSFET; electrically isolated from S1 unless externally connected |
| 5 (G2) | Gate of Channel 2 | Independent control input for second channel; identical threshold and capacitance to G1 |
| 6 (D2) | Drain of Channel 2 | Second high-side output; enables dual low-side or half-bridge topologies |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two fully isolated MOSFETs in one SOT363 footprint-reduces board area by 40% vs. discrete SOT23 pair |
| Low VGS(TH) matching | 1.0–2.0V range across both channels-ensures simultaneous turn-on with 3.3V logic without external level shifting |
| ESD protection | HBM >2kV per IEC 61000-4-2-eliminates need for external TVS in consumer-grade motor interface designs |
| Low Coss | 4.5pF-minimizes Miller effect during high-dV/dt commutation in half-bridge configurations |
| Green construction | Halogen- and antimony-free, RoHS 3 compliant-meets IPC-1752A material declaration requirements for EU/China markets |
Applications
| Brushless DC Fan Control | USB-C Power Path Switching |
|---|---|
|
Use Scenario: Driving two-phase commutation in 5V–24V cooling fans using microcontroller PWM signals. IC Role / Device Role / Timing Role: Dual low-side switch controlling phase winding current; each channel handles one leg of the H-bridge driver stage. Use Value: 4.5V RDS(ON) = 4.0Ω ensures <200mW loss per channel at 150mA, enabling fan operation down to 3.3V logic supply. |
Use Scenario: Enabling/disabling VBUS paths in portable USB-C accessories with overcurrent and reverse-polarity protection. IC Role / Device Role / Timing Role: Dual back-to-back MOSFET configuration for bidirectional blocking and controlled power ramp-up. Use Value: Matched VGS(TH) and low Qgd (0.18nC) allow synchronized turn-on with <100ns skew, preventing shoot-through during hot-swap events. |
| IoT Sensor Node Power Gating | LED Matrix Row Drivers |
|
Use Scenario: Selectively powering RF transceivers, ADCs, or memory blocks in battery-operated edge nodes to extend sleep-mode runtime. IC Role / Device Role / Timing Role: Dual load switch isolating subsystems; one channel controls analog section, the other digital core. Use Value: 1µA IDSS and ±10µA IGSS ensure <5µW quiescent loss per channel-critical for multi-year coin-cell operation. |
Use Scenario: Scanning 8×8 monochrome LED displays in smart home panels using multiplexed row/column addressing. IC Role / Device Role / Timing Role: Low-side row sink driver handling peak currents up to 226mA per row at 4.5V gate drive. Use Value: Fast tR = 5.8ns and tF = 14.3ns support >2kHz refresh rates without ghosting, even at -40°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2053LW-7 | RDS(ON) = 2.2Ω @ 4.5V (lower), but VDSS = 20V (reduced voltage margin) | Better efficiency below 12V rails; unsuitable for 24V industrial sensors or 48V PoE injectors | Select when optimizing for 3.3V/5V systems with strict RDS(ON) targets and no need for >30V blocking |
| NTJD4152PZ-1 | Complementary P+N pair (not dual N); RDS(ON) = 2.8Ω @ 4.5V (P-ch), 3.5Ω (N-ch) | Enables high-side switching capability but lacks channel matching and adds complexity in gate drive sequencing | Choose only when half-bridge topology requires active high-side control and layout permits asymmetric drive design |
Compared with DMN2053LW-7 and NTJD4152PZ-1, the 2N7002DWK-13 provides balanced dual-N performance with 60V rating and verified 4.5V drive compatibility-making it optimal for cost-sensitive, space-constrained 12–24V embedded power switches where channel symmetry and voltage headroom are critical.
Availability
2N7002DWK-13 is available at Aetrix Electronics and suitable for motor control, USB-C power path management, and IoT subsystem power gating requiring stable component supply across industrial, consumer, and automotive-tier programs.
Supply support for 2N7002DWK-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and product qualification aligned to AEC-Q101 for automotive MOSFETs.
The 2N7002DWK belongs to Diodes' general-purpose logic-level MOSFET product line, engineered for high-efficiency, low-voltage power switching in space-constrained consumer, computing, and industrial control applications.
FAQ
What is the maximum safe operating temperature for 2N7002DWK-13?
The junction temperature must not exceed +150°C under any condition. At TA = +70°C with 278°C/W thermal resistance (enhanced PCB layout), the device supports up to 208mA continuous drain current. Derating curves in Figure 5 confirm RDS(ON) remains within specification up to this limit.
Can 2N7002DWK-13 be used in a half-bridge configuration?
Yes-its dual N-channel structure supports half-bridge topologies when paired with external bootstrap circuitry or high-side gate driver ICs. Pin 3 (D1) and pin 6 (D2) serve as independent high-side outputs; internal isolation prevents cross-conduction, and matched VGS(TH) ensures consistent timing.
Is 2N7002DWK-13 qualified for automotive applications?
While not pre-qualified to AEC-Q101, Diodes states that automotive-grade versions with change control, PPAP capability, and IATF 16949 manufacturing are available upon request. Standard 2N7002DWK-13 meets all electrical and reliability specs required for non-safety-critical automotive modules such as body control and HVAC actuators.
How does the ESD protection affect PCB layout?
The integrated HBM >2kV ESD protection eliminates mandatory external TVS diodes for basic I/O protection. However, layout must maintain ≥0.2mm clearance between G1/G2 and adjacent high-dV/dt traces, and avoid routing gate lines parallel to noisy power nets to prevent coupling-induced false turn-on.
2N7002DWK-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 261mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.04nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 30V
- Power - Max:
- 330mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
2N7002DWK-13 FAQ
1.How can I place an order for 2N7002DWK-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N7002DWK-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N7002DWK-13 reliable?
The price and inventory of 2N7002DWK-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002DWK-13 is usually 5 days.
3.What payment methods are accepted for 2N7002DWK-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002DWK-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N7002DWK-13?
2N7002DWK-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N7002DWK-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N7002DWK-13?
For technical support, including 2N7002DWK-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002DWK-13 requirements.
6.How does Aetrix verify that 2N7002DWK-13 is sourced from the original manufacturer or authorized distributors?
All 2N7002DWK-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002DWK-13 meets industry standards.
7.What is the process for return or replacement of 2N7002DWK-13?
All 2N7002DWK-13 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002DWK-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N7002DWK-13 part is unused and in its original packaging.
Return procedure for 2N7002DWK-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N7002DWK-13 Tags

-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

-
2N7002DW-7-F
Diodes Incorporated

-
SSM6L56FE,LM
Toshiba Semiconductor and Storage

-
SSM6N37FU,LF
Toshiba Semiconductor and Storage

-
2N7002DWH6327XTSA1
Infineon Technologies

-
2N7002BKS,115
Nexperia USA Inc.

-
DMG1016UDW-7
Diodes Incorporated

-
UM6K33NTN
Rohm Semiconductor

-
DMG6602SVT-7
Diodes Incorporated

-
EM6K34T2CR
Rohm Semiconductor

-
UM6K34NTCN
Rohm Semiconductor

-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
