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Diodes Incorporated 2N7002DWK-13

Part No.:
2N7002DWK-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
Aetrix2N7002DWK-13.pdf
Description:
MOSFET 2N-CH 60V 0.261A SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,213

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Product details

Overview

2N7002DWK-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V VDSS, 3.0Ω RDS(ON) @ VGS = 10V, and 261mA continuous drain current at TA = +25°C. It integrates ESD protection, low gate threshold (1.0–2.0V), and fast switching (tF = 14.3ns) for compact power management in space-constrained motor control circuits.

For engineers reviewing the 2N7002DWK-13 datasheet, 2N7002DWK-13 pinout, 2N7002DWK-13 application, or 2N7002DWK-13 equivalent, key selection criteria include dual-channel integration in SOT363, guaranteed RDS(ON) at 4.5V drive, thermal resistance of 278°C/W on enhanced PCB layout, and compliance with AEC-Q101 stress testing per Diodes' automotive qualification pathway.

Technical Context

This dual MOSFET uses planar silicon process with integrated gate protection diodes per channel and ESD-hardened structure (HBM >2kV). Each channel operates independently with matched VGS(TH) (1.0–2.0V) and exhibits low input capacitance (Ciss = 41pF) for high-frequency PWM control.

Thermal performance is defined for two mounting conditions: 379°C/W (minimum pad) and 278°C/W (1-inch² copper plate). Dynamic parameters-including Qg = 1.04nC @ VGS = 10V and tD(OFF) = 37.8ns-are specified under standardized 150Ω gate drive and 30V VDD.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - supports 24V/48V rail switching without avalanche derating
RDS(ON) 3.0Ω @ VGS = 10V - enables <150mW conduction loss at 200mA load
ID (max) 261mA @ TA = +25°C - suitable for low-power logic-level load switching
VGS(TH) 1.0–2.0V - ensures turn-on with 3.3V GPIO or microcontroller outputs
Ciss 41pF - limits gate drive power and enables >1MHz PWM operation
tF 14.3ns - reduces switching transition losses in DC-DC and motor gate drivers
PD 0.45W (enhanced layout) - allows sustained operation up to +70°C ambient

Pinout & Package

Package: SOT363 - 6-pin, surface-mount, dual-channel discrete MOSFET package with 0.65mm lead pitch, 2.15mm × 2.10mm footprint, and 0.95mm height. Molded green compound (UL 94V-0), matte tin-plated terminals, MSL Level 1.

Pin/Terminal Circuit Role Design Meaning
1 (S1) Source of Channel 1 Low-side return path for first MOSFET; internally tied to pin 4 in common-source configuration
2 (G1) Gate of Channel 1 Control terminal for independent switching of first channel; ESD-protected
3 (D1) Drain of Channel 1 High-side connection point for Channel 1; rated for 60V blocking
4 (S2) Source of Channel 2 Source node for second MOSFET; electrically isolated from S1 unless externally connected
5 (G2) Gate of Channel 2 Independent control input for second channel; identical threshold and capacitance to G1
6 (D2) Drain of Channel 2 Second high-side output; enables dual low-side or half-bridge topologies

Key Features

Feature Design Value
Dual N-channel topology Two fully isolated MOSFETs in one SOT363 footprint-reduces board area by 40% vs. discrete SOT23 pair
Low VGS(TH) matching 1.0–2.0V range across both channels-ensures simultaneous turn-on with 3.3V logic without external level shifting
ESD protection HBM >2kV per IEC 61000-4-2-eliminates need for external TVS in consumer-grade motor interface designs
Low Coss 4.5pF-minimizes Miller effect during high-dV/dt commutation in half-bridge configurations
Green construction Halogen- and antimony-free, RoHS 3 compliant-meets IPC-1752A material declaration requirements for EU/China markets

Applications

Brushless DC Fan Control USB-C Power Path Switching

Use Scenario: Driving two-phase commutation in 5V–24V cooling fans using microcontroller PWM signals.

IC Role / Device Role / Timing Role: Dual low-side switch controlling phase winding current; each channel handles one leg of the H-bridge driver stage.

Use Value: 4.5V RDS(ON) = 4.0Ω ensures <200mW loss per channel at 150mA, enabling fan operation down to 3.3V logic supply.

Use Scenario: Enabling/disabling VBUS paths in portable USB-C accessories with overcurrent and reverse-polarity protection.

IC Role / Device Role / Timing Role: Dual back-to-back MOSFET configuration for bidirectional blocking and controlled power ramp-up.

Use Value: Matched VGS(TH) and low Qgd (0.18nC) allow synchronized turn-on with <100ns skew, preventing shoot-through during hot-swap events.

IoT Sensor Node Power Gating LED Matrix Row Drivers

Use Scenario: Selectively powering RF transceivers, ADCs, or memory blocks in battery-operated edge nodes to extend sleep-mode runtime.

IC Role / Device Role / Timing Role: Dual load switch isolating subsystems; one channel controls analog section, the other digital core.

Use Value: 1µA IDSS and ±10µA IGSS ensure <5µW quiescent loss per channel-critical for multi-year coin-cell operation.

Use Scenario: Scanning 8×8 monochrome LED displays in smart home panels using multiplexed row/column addressing.

IC Role / Device Role / Timing Role: Low-side row sink driver handling peak currents up to 226mA per row at 4.5V gate drive.

Use Value: Fast tR = 5.8ns and tF = 14.3ns support >2kHz refresh rates without ghosting, even at -40°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2053LW-7 RDS(ON) = 2.2Ω @ 4.5V (lower), but VDSS = 20V (reduced voltage margin) Better efficiency below 12V rails; unsuitable for 24V industrial sensors or 48V PoE injectors Select when optimizing for 3.3V/5V systems with strict RDS(ON) targets and no need for >30V blocking
NTJD4152PZ-1 Complementary P+N pair (not dual N); RDS(ON) = 2.8Ω @ 4.5V (P-ch), 3.5Ω (N-ch) Enables high-side switching capability but lacks channel matching and adds complexity in gate drive sequencing Choose only when half-bridge topology requires active high-side control and layout permits asymmetric drive design

Compared with DMN2053LW-7 and NTJD4152PZ-1, the 2N7002DWK-13 provides balanced dual-N performance with 60V rating and verified 4.5V drive compatibility-making it optimal for cost-sensitive, space-constrained 12–24V embedded power switches where channel symmetry and voltage headroom are critical.

Availability

2N7002DWK-13 is available at Aetrix Electronics and suitable for motor control, USB-C power path management, and IoT subsystem power gating requiring stable component supply across industrial, consumer, and automotive-tier programs.

Supply support for 2N7002DWK-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and product qualification aligned to AEC-Q101 for automotive MOSFETs.

The 2N7002DWK belongs to Diodes' general-purpose logic-level MOSFET product line, engineered for high-efficiency, low-voltage power switching in space-constrained consumer, computing, and industrial control applications.

FAQ

What is the maximum safe operating temperature for 2N7002DWK-13?

The junction temperature must not exceed +150°C under any condition. At TA = +70°C with 278°C/W thermal resistance (enhanced PCB layout), the device supports up to 208mA continuous drain current. Derating curves in Figure 5 confirm RDS(ON) remains within specification up to this limit.

Can 2N7002DWK-13 be used in a half-bridge configuration?

Yes-its dual N-channel structure supports half-bridge topologies when paired with external bootstrap circuitry or high-side gate driver ICs. Pin 3 (D1) and pin 6 (D2) serve as independent high-side outputs; internal isolation prevents cross-conduction, and matched VGS(TH) ensures consistent timing.

Is 2N7002DWK-13 qualified for automotive applications?

While not pre-qualified to AEC-Q101, Diodes states that automotive-grade versions with change control, PPAP capability, and IATF 16949 manufacturing are available upon request. Standard 2N7002DWK-13 meets all electrical and reliability specs required for non-safety-critical automotive modules such as body control and HVAC actuators.

How does the ESD protection affect PCB layout?

The integrated HBM >2kV ESD protection eliminates mandatory external TVS diodes for basic I/O protection. However, layout must maintain ≥0.2mm clearance between G1/G2 and adjacent high-dV/dt traces, and avoid routing gate lines parallel to noisy power nets to prevent coupling-induced false turn-on.

2N7002DWK-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
261mA (Ta)
Rds On (Max) @ Id, Vgs:
3Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.04nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
41pF @ 30V
Power - Max:
330mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

2N7002DWK-13 FAQ

1.How can I place an order for 2N7002DWK-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002DWK-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002DWK-13 reliable?

The price and inventory of 2N7002DWK-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002DWK-13 is usually 5 days.

3.What payment methods are accepted for 2N7002DWK-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002DWK-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002DWK-13?

2N7002DWK-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002DWK-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002DWK-13?

For technical support, including 2N7002DWK-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002DWK-13 requirements.

6.How does Aetrix verify that 2N7002DWK-13 is sourced from the original manufacturer or authorized distributors?

All 2N7002DWK-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002DWK-13 meets industry standards.

7.What is the process for return or replacement of 2N7002DWK-13?

All 2N7002DWK-13 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002DWK-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002DWK-13 part is unused and in its original packaging.

Return procedure for 2N7002DWK-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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