Diodes Incorporated 2N7002DWK-7

Overview

2N7002DWK-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60V V_DSS, 3.0Ω R_DS(ON) @ 10V V_GS, and 261mA continuous drain current at +25°C. It integrates two independent ESD-protected MOSFETs with low gate threshold (1.0–2.0V) and fast switching (t_F = 14.3ns), deployed in compact load-switching and motor control circuits.

For engineers reviewing the 2N7002DWK-7 datasheet, 2N7002DWK-7 pinout, 2N7002DWK-7 application, or 2N7002DWK-7 equivalent, key selection criteria include dual-channel integration in SOT363, guaranteed R_DS(ON) at 4.5V and 10V drive, thermal resistance of 278°C/W on enhanced PCB layout, and compliance with AEC-Q101 stress testing per manufacturer qualification notes.

Technical Context

This dual MOSFET uses planar silicon process with integrated gate protection diodes per channel and ESD hardening to ±2kV HBM. Each channel operates independently with matched threshold voltage (1.0–2.0V) and exhibits low input capacitance (C_iss = 41pF) and reverse transfer capacitance (C_rss = 2.7pF) for stable high-frequency switching.

Thermal performance is defined under two PCB conditions: 379°C/W (minimum pad) and 278°C/W (1-inch² copper plate). Safe operating area (SOA) supports pulsed drain current up to 1.1A at 10µs/1% duty cycle, with body diode forward voltage V_SD = 0.8–1.4V at 115mA.

Key Specifications

Pinout & Package

Package: SOT363 - 6-pin, surface-mount, dual-channel discrete package with 0.65mm pitch, 2.15mm × 2.10mm footprint, and 0.95mm height. Molded green compound (UL 94V-0), matte tin-plated leads, MSL Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN2004DWK-7 and NTJD4152PZ-7, the 2N7002DWK-7 delivers optimal balance of 60V robustness, 4.5V logic compatibility, and SOT363 footprint-making it preferred for mixed-voltage industrial controls where voltage margin and gate drive simplicity outweigh marginal R_DS(ON) differences.

Availability

2N7002DWK-7 is available at Aetrix Electronics and suitable for motor control, power management, LED driver, and signal switching applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for 2N7002DWK-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with design centers in Asia, Europe, and the US, and manufacturing in ISO/TS 16949-certified facilities.

The 2N7002DWK-7 belongs to Diodes' general-purpose logic-level MOSFET product line, engineered for space-constrained, low-power switching in consumer, industrial, and automotive subsystems where dual-channel integration reduces PCB area and assembly cost.

FAQ

Is the 2N7002DWK-7 suitable for automotive applications?

Yes-the device is AEC-Q101 qualified per Diodes Incorporated's product definitions and manufactured in IATF 16949-certified facilities. Its −55°C to +150°C operating range, ESD hardening, and PPAP capability make it appropriate for body electronics, HVAC actuators, and infotainment power sequencing-but not for safety-critical ASIL-B/C systems without additional system-level validation.

What is the maximum safe continuous current per channel at 70°C ambient?

Per the datasheet, the continuous drain current is derated to 208mA at T_A = +70°C with standard FR-4 PCB layout (2oz copper, minimum pad). This assumes no forced airflow and junction temperature limited to 150°C; actual usable current depends on thermal pad area and copper thickness per the R_θJA = 278°C/W enhanced layout condition.

Does the 2N7002DWK-7 have back-to-back MOSFETs or independent channels?

It contains two fully independent N-channel MOSFETs with separate source, gate, and drain terminals (S1/G1/D1 and S2/G2/D2). There is no internal connection between channels-unlike back-to-back configurations used for AC switching-enabling asymmetric use such as one channel as load switch and the other as level shifter or current mirror.

Can the body diodes be used for reverse polarity protection?

No-the intrinsic body diodes conduct from source to drain (S→D), so they do not block reverse voltage applied to the drain. For reverse polarity protection, external P-channel MOSFETs or dedicated protection ICs are required; this device's body diodes serve only freewheeling and clamping functions in inductive switching.