Diodes Incorporated 2N7002DWQ-7-F
- Part No.:
- 2N7002DWQ-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
2N7002DWQ-7-F.pdf
- Description:
- MOSFET 2N-CH 60V 0.23A SOT363
- Quantity:
- Payment:

- Shipping:

Inventory:13,801
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Product details
Overview
2N7002DWQ-7-F from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 60 V VDSS, 7.5 Ω RDS(ON) @ VGS = 5 V, and 0.23 A continuous drain current at +25°C. It delivers low gate threshold (1.0–2.0 V), fast switching, and ultra-small footprint for space-constrained power management circuits.
For engineers reviewing the 2N7002DWQ-7-F datasheet, 2N7002DWQ-7-F pinout, 2N7002DWQ-7-F application, or 2N7002DWQ-7-F equivalent, key selection criteria include dual-channel integration, thermal resistance (RθJA = 318 °C/W with thermal vias), body diode forward voltage (0.78–1.5 V), input capacitance (22–50 pF), and AEC-Q101 qualification status.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel operates with identical electrical specs: 60 V breakdown, 1.0–2.0 V gate threshold, and 3.2 Ω typical RDS(ON) at VGS = 5 V and TJ = +25°C. Its low Ciss (22 pF typ.) and fast tD(ON)/tD(OFF) (7–20 ns) support high-frequency switching up to several MHz in DC-DC stages.
The device uses a standard SOT363 lead-frame with matte tin plating, rated for moisture sensitivity level 1 (J-STD-020), and achieves 0.4 W total power dissipation when mounted on FR-4 with thermal vias. Its junction-to-case thermal resistance is 135 °C/W, enabling stable operation up to +150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Supports 24 V and 48 V rail switching without avalanche stress. |
| RDS(ON) @ VGS = 5 V | 7.5 Ω max - Enables efficient low-current load switching (e.g., LED bias, logic-level signal routing). |
| ID Continuous | 0.23 A @ +25°C - Suitable for sub-300 mA digital load control and peripheral power gating. |
| Ciss | 22 pF typ. - Reduces gate drive power and enables clean edge transitions in 1–10 MHz PWM. |
| VGS(TH) | 1.0–2.0 V - Ensures full enhancement with 3.3 V or 5 V microcontroller GPIOs without level-shifting. |
| TJ Range | −55 to +150 °C - Qualified for extended industrial and automotive under-hood environments. |
| RθJA (with vias) | 318 °C/W - Allows 0.4 W power handling on standard 2 oz copper PCB with thermal relief. |
Pinout & Package
Package: SOT363 - 6-pin ultra-small surface-mount package (2.0 × 2.225 × 0.9 mm), molded green plastic, UL 94V-0 rated, lead-free and RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; tied to ground or common source node in dual-switch topologies. |
| 2 (G1) | Gate of Channel 1 | Control input for Channel 1; requires <20 nA leakage and tolerates ±20 V continuous gate-source voltage. |
| 3 (D2) | Drain of Channel 2 | High-side output node for second MOSFET; supports 60 V blocking and 0.23 A conduction. |
| 4 (D1) | Drain of Channel 1 | High-side output node for first MOSFET; electrically isolated from Channel 2's drain. |
| 5 (G2) | Gate of Channel 2 | Independent control input for Channel 2; no internal coupling to G1-supports asynchronous switching. |
| 6 (S2) | Source of Channel 2 | Return path for second MOSFET; may be connected separately or paralleled with S1 depending on layout. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables compact dual-load control (e.g., H-bridge half-leg or dual enable paths) without external isolation components. |
| Low 1.0–2.0 V gate threshold | Guarantees full turn-on with 3.3 V logic, eliminating need for gate drivers in low-power MCU interfaces. |
| Ultra-low input capacitance (22 pF typ.) | Reduces gate charge (Qg ≈ 0.7 nC) and dynamic losses in high-frequency (>1 MHz) switching applications. |
| AEC-Q101 qualified variant available | The Q-suffix version (e.g., 2N7002DWQ) is manufactured in IATF 16949 facilities and supports PPAP documentation for automotive use. |
| Green, halogen- and antimony-free | Meets JEDEC J-STD-020 Level 1 moisture sensitivity and EU RoHS 3 (2015/863/EU) compliance out-of-box. |
Applications
| Motor Control Interface | USB Port Power Switching |
|---|---|
|
Use Scenario: Driving small DC brush motors (<1 W) in portable medical pumps and precision lab actuators. IC Role / Device Role: Dual low-side switch controlling motor direction via complementary channel activation. Use Value: 7.5 Ω RDS(ON) limits conduction loss to <0.4 mW per channel at 100 mA, preserving battery life in battery-powered systems. |
Use Scenario: Enabling/disabling VBUS power to USB peripherals in embedded host controllers. IC Role / Device Role: Dual-channel load switch providing independent overcurrent protection and hot-plug sequencing. Use Value: Independent gate control allows staggered turn-on to limit inrush current; 60 V rating accommodates transient surges beyond 5 V USB spec. |
| IoT Sensor Node Power Gating | Industrial PLC Digital Output Module |
|
Use Scenario: Power cycling BLE/Wi-Fi modules and analog sensor front-ends in energy-harvesting nodes. IC Role / Device Role: Dual-channel power switch isolating subsystems during deep-sleep mode to reduce quiescent current. Use Value: IGSS ≤ ±10 nA ensures <100 nA total gate leakage, maintaining µA-level system sleep current budgets. |
Use Scenario: Driving 24 V DC solenoids and indicator LEDs in DIN-rail-mounted programmable logic controllers. IC Role / Device Role: Dual-channel interface between microcontroller GPIOs and industrial 24 V loads. Use Value: 150 °C max junction temperature and −55 °C min storage rating ensure reliable operation in uncontrolled cabinet environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2041LSD-13 | Lower RDS(ON) (2.2 Ω @ 4.5 V), higher ID (0.6 A), same SOT363 package but different pinout (G-D-S vs D-G-S). | Requires PCB redesign due to non-identical pin mapping; better suited for higher-current 3.3 V logic-driven loads. | Select if higher current capability and lower conduction loss outweigh layout change cost. |
| NTJD4152PZ-1 | Higher VDSS (60 V), slightly higher RDS(ON) (8.5 Ω @ 4.5 V), same SOT363, but only qualified to industrial temp range (−55 to +125 °C). | Lacks AEC-Q101 qualification and 150 °C junction rating; not suitable for automotive under-hood use. | Prefer for cost-sensitive industrial controls where extended temperature margin is unnecessary. |
Compared with DMN2041LSD-13 and NTJD4152PZ-1, the 2N7002DWQ-7-F offers the best balance of automotive-grade reliability (AEC-Q101), 150 °C operation, and verified 3.3 V logic compatibility-critical for safety-critical and long-lifecycle designs.
Availability
2N7002DWQ-7-F is available at Aetrix Electronics and suitable for motor control interfaces, USB port power switching, IoT sensor node power gating, and industrial PLC digital output modules requiring stable component supply across multi-year production cycles.
Supply support for 2N7002DWQ-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The 2N7002DWQ series belongs to Diodes' automotive-qualified power MOSFET product line, engineered specifically for robust, low-voltage switching in safety-critical and thermally demanding environments such as ADAS sensors and body control modules.
FAQ
Is the 2N7002DWQ-7-F pin-compatible with the standard 2N7002DW-7-F?
Yes-the "Q" suffix denotes AEC-Q101 qualification and automotive-grade process control, but the die, pinout, package dimensions, and electrical specifications are identical to the industrial-grade 2N7002DW-7-F. No PCB or schematic changes are required for migration.
What is the maximum safe operating frequency for PWM switching with this device?
Based on its 7–20 ns turn-on/off delay times and 22 pF input capacitance, the 2N7002DWQ-7-F supports clean switching up to 5 MHz in low-duty-cycle applications. For continuous 50% duty-cycle operation, thermal limits constrain practical use to ≤1 MHz with adequate PCB copper area.
Does this part include integrated ESD protection on gate terminals?
No-this MOSFET does not integrate gate-oxide ESD protection. The datasheet specifies ±20 V continuous and ±40 V pulsed gate-source voltage limits. External 10 kΩ current-limiting resistors and/or TVS diodes are recommended for systems exposed to human contact or cable disconnection events.
Can both channels be paralleled to increase current capacity?
Not recommended-channel matching is not guaranteed, and thermal imbalance can cause current hogging. The datasheet specifies individual 0.23 A ratings; paralleling would require derating and active current balancing. Use a single higher-current MOSFET (e.g., DMN2041LSD) instead.
2N7002DWQ-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 230mA
- Rds On (Max) @ Id, Vgs:
- 7.5Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V
- Power - Max:
- 310mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
2N7002DWQ-7-F FAQ
1.How can I place an order for 2N7002DWQ-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N7002DWQ-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N7002DWQ-7-F reliable?
The price and inventory of 2N7002DWQ-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002DWQ-7-F is usually 5 days.
3.What payment methods are accepted for 2N7002DWQ-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002DWQ-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N7002DWQ-7-F?
2N7002DWQ-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N7002DWQ-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N7002DWQ-7-F?
For technical support, including 2N7002DWQ-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002DWQ-7-F requirements.
6.How does Aetrix verify that 2N7002DWQ-7-F is sourced from the original manufacturer or authorized distributors?
All 2N7002DWQ-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002DWQ-7-F meets industry standards.
7.What is the process for return or replacement of 2N7002DWQ-7-F?
All 2N7002DWQ-7-F units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002DWQ-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N7002DWQ-7-F part is unused and in its original packaging.
Return procedure for 2N7002DWQ-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N7002DWQ-7-F Tags

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SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

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Diodes Incorporated

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