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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N7002-E3

Name: 2N7002-E3
Brand: Vishay Siliconix
SKU: 2N7002-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2N7002-E3.pdf

Description:: MOSFET N-CH 60V 115MA TO236

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Product details

Overview

2N7002-E3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET in SOT-23 package, rated for 60 V V_DS, 115 mA continuous drain current at 25 °C, and 7.5 Ω r_DS(on) at V_GS = 10 V. It serves as a low-voltage logic-level switch in battery-powered load control, LED drivers, and signal routing circuits.

For engineers reviewing the 2N7002-E3 datasheet, 2N7002-E3 pinout, 2N7002-E3 application, or 2N7002-E3 equivalent, this discrete MOSFET offers verified TTL/CMOS-compatible gate drive, fast 7 ns turn-on/turn-off times, and low 22 pF input capacitance-critical for high-speed digital switching and space-constrained PCB layouts.

Technical Context

The 2N7002-E3 employs a planar vertical DMOS structure optimized for low-threshold operation (V_GS(th) = 1.0–2.5 V) and stable r_DS(on) over temperature. Its gate oxide is designed for robust 20 V continuous V_GS rating and <100 nA gate leakage at 20 V.

Dynamic performance is characterized by C_iss = 22 pF, C_oss = 11 pF, and Cr_ss = 2 pF at V_DS = 25 V, enabling efficient switching in low-power DC-DC bias networks and level-shifting interfaces without external gate buffers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	60 V - supports rail-to-rail switching up to 48 V systems with margin
r_DS(on) Max	7.5 Ω @ V_GS = 10 V - ensures ≤0.8 mW conduction loss at 100 mA load
V_GS(th)	1.0–2.5 V - enables direct drive from 3.3 V or 5 V logic without level shifters
I_D Continuous	115 mA @ T_A = 25 °C - suitable for driving LEDs, small relays, or logic inputs
C_iss	22 pF - minimizes gate drive power and speeds up edge transitions
t_ON/t_OFF	7 ns each @ V_DD = 15 V, R_L = 25 Ω - supports >50 MHz digital switching

Pinout & Package

SOT-23 (TO-236) plastic surface-mount package, 3-pin, standard footprint per JEDEC TO-236AB. Thermal resistance R_thJA = 625 °C/W (free air), compatible with reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for channel conduction	Internally connected to substrate; ties to system ground or low-side reference
2 (Gate)	Control electrode for channel formation	High-impedance input requiring <100 nA bias; sensitive to ESD
3 (Drain)	Current entry point into channel	Connected to load supply rail; handles full switched voltage up to 60 V

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V/5 V systems
Low input capacitance	C_iss = 22 pF - reduces gate charge Q_g and dynamic power in high-frequency PWM
Fast switching	7 ns t_ON/t_OFF - enables clean edges in timing-critical digital enable/disable paths
Low leakage	I_DSS ≤ 1 µA @ V_DS = 60 V, T_J = 25 °C - preserves battery life in always-on standby circuits
Robust thermal range	T_J = –55 to +150 °C - qualified for industrial and automotive under-hood auxiliary functions

Applications

LED Indicator Control	Microcontroller GPIO Expansion
Use Scenario: Driving 20 mA status LEDs from 3.3 V MCU I/O pins with minimal voltage drop. IC Role / Device Role / Timing Role: Low-side switch controlled directly by GPIO output. Use Value: 7.5 Ω r_DS(on) limits LED series resistor loss to <0.15 V at 20 mA - preserves brightness and simplifies BOM.	Use Scenario: Expanding limited MCU GPIO count to control multiple solenoids or relays. IC Role / Device Role / Timing Role: Discrete load switch enabling parallel on/off control of 12 V actuators. Use Value: 115 mA I_D rating and 60 V V_DS allow safe switching of 12 V/100 mA solenoids without snubbers or flyback diodes.
Battery-Powered Sensor Interface	Level-Shifting Signal Routing
Use Scenario: Enabling/disabling analog sensor power rails in ultra-low-power IoT nodes. IC Role / Device Role / Timing Role: High-side or low-side power gate for precision sensor biasing. Use Value: I_DSS ≤ 1 µA and V_GS(th) ≤ 2.5 V ensure sub-µA quiescent current and reliable wake-up from deep sleep modes.	Use Scenario: Bidirectional level translation between 1.8 V FPGA I/O and 3.3 V peripheral buses. IC Role / Device Role / Timing Role: Passive NMOS translator leveraging body diode and gate control. Use Value: C_iss = 22 pF and 7 ns switching support >20 MHz data rates while maintaining signal integrity across voltage domains.

LED Indicator Control

Microcontroller GPIO Expansion

Use Scenario: Driving 20 mA status LEDs from 3.3 V MCU I/O pins with minimal voltage drop.

IC Role / Device Role / Timing Role: Low-side switch controlled directly by GPIO output.

Use Value: 7.5 Ω r_DS(on) limits LED series resistor loss to <0.15 V at 20 mA - preserves brightness and simplifies BOM.

Use Scenario: Expanding limited MCU GPIO count to control multiple solenoids or relays.

IC Role / Device Role / Timing Role: Discrete load switch enabling parallel on/off control of 12 V actuators.

Use Value: 115 mA I_D rating and 60 V V_DS allow safe switching of 12 V/100 mA solenoids without snubbers or flyback diodes.

Battery-Powered Sensor Interface

Level-Shifting Signal Routing

Use Scenario: Enabling/disabling analog sensor power rails in ultra-low-power IoT nodes.

IC Role / Device Role / Timing Role: High-side or low-side power gate for precision sensor biasing.

Use Value: I_DSS ≤ 1 µA and V_GS(th) ≤ 2.5 V ensure sub-µA quiescent current and reliable wake-up from deep sleep modes.

Use Scenario: Bidirectional level translation between 1.8 V FPGA I/O and 3.3 V peripheral buses.

IC Role / Device Role / Timing Role: Passive NMOS translator leveraging body diode and gate control.

Use Value: C_iss = 22 pF and 7 ns switching support >20 MHz data rates while maintaining signal integrity across voltage domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	r_DS(on) = 3.5 Ω @ V_GS = 4.5 V; higher I_D = 290 mA; same SOT-23 package	Better for 200+ mA loads; requires tighter layout due to higher peak current	Select when lower conduction loss at 3.3 V drive is critical and board space allows same footprint
BSS138-7-F	r_DS(on) = 3.5 Ω @ V_GS = 10 V; V_GS(th) = 0.8–1.5 V; C_iss = 25 pF	Lower threshold improves 1.8 V compatibility but slightly slower switching	Prefer for mixed-voltage systems where 1.8 V logic must directly control the FET

Compared with DMN2004K-7 and BSS138-7-F, the 2N7002-E3 delivers balanced trade-offs: moderate r_DS(on) and proven reliability in cost-sensitive consumer and industrial controls, while maintaining full compatibility with legacy 5 V and 3.3 V logic families without redesign.

Availability

2N7002-E3 is available at Aetrix Electronics and suitable for LED indicator control, microcontroller GPIO expansion, and battery-powered sensor interface applications requiring stable component supply and long-term obsolescence management.

Supply support for 2N7002-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The 2N7002-E3 belongs to Vishay's legacy logic-level N-channel MOSFET product line, engineered for low-cost, high-volume digital switching in portable and embedded systems where gate drive simplicity and thermal stability are essential.

FAQ

What is the maximum continuous drain current rating for the 2N7002-E3?

The 2N7002-E3 is rated for 115 mA continuous drain current at ambient temperature (T_A = 25 °C). At elevated ambient temperatures, derating applies: it delivers 73 mA at T_A = 100 °C. This rating assumes proper PCB copper area for heat dissipation and accounts for its 625 °C/W junction-to-ambient thermal resistance in free-air conditions. The 2N7002-E3 datasheet specifies these values under standard test conditions per JEDEC guidelines.

Does the 2N7002-E3 support direct drive from 3.3 V microcontrollers?

Yes, the 2N7002-E3 supports direct drive from 3.3 V microcontrollers. Its gate threshold voltage V_GS(th) ranges from 1.0 V to 2.5 V, and it achieves full enhancement with r_DS(on) ≤ 7.5 Ω at V_GS = 4.5 V. At 3.3 V, typical r_DS(on) remains below 13.5 Ω, enabling reliable switching of loads up to ~50 mA. The 2N7002-E3 has been widely deployed in 3.3 V I/O interface designs without external level shifters.

What is the package type and lead finish of the 2N7002-E3?

The 2N7002-E3 uses the SOT-23 (TO-236) surface-mount package with three terminals: Drain (pin 3), Gate (pin 2), and Source (pin 1). It features matte tin (Sn) lead finish compliant with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1. The 2N7002-E3 is qualified for standard reflow soldering profiles including peak temperatures up to 260 °C.

How does the 2N7002-E3 compare to the 2N7000 in terms of performance and use cases?

The 2N7002-E3 and 2N7000 share identical electrical specifications except for packaging: the 2N7002-E3 is in SOT-23, while the 2N7000 is in TO-92. Both have 60 V V_DS, 1–2.5 V V_GS(th), and similar r_DS(on). The 2N7002-E3 offers superior thermal performance in compact layouts and is preferred for automated assembly. The 2N7002-E3 replaces the 2N7000 in modern PCB designs where space and manufacturability are constraints.

Is the 2N7002-E3 suitable for switching inductive loads like relays or solenoids?

Yes, the 2N7002-E3 is suitable for switching inductive loads such as relays or solenoids rated ≤100 mA and ≤12 V. Its 60 V V_DS rating provides ample margin against flyback voltage spikes, and its 0.5 A pulsed drain current (I_DM) accommodates relay coil inrush. For sustained reliability, a flyback diode across the load is recommended. The 2N7002-E3 has been validated in thousands of relay driver circuits across industrial control panels.

2N7002-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236

2N7002-E3 FAQ

1.How can I place an order for 2N7002-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002-E3 reliable?

The price and inventory of 2N7002-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002-E3 is usually 5 days.

3.What payment methods are accepted for 2N7002-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002-E3?

2N7002-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002-E3?

For technical support, including 2N7002-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002-E3 requirements.

6.How does Aetrix verify that 2N7002-E3 is sourced from the original manufacturer or authorized distributors?

All 2N7002-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002-E3 meets industry standards.

7.What is the process for return or replacement of 2N7002-E3?

All 2N7002-E3 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002-E3 part is unused and in its original packaging.

Return procedure for 2N7002-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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