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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. 2N7002F,215

Name: 2N7002F,215
Brand: Nexperia USA Inc.
SKU: 2N7002F,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002F,215

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2N7002F,215.pdf

Description:: MOSFET N-CH 60V 475MA TO236AB

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Product details

Overview

2N7002F,215 from Nexperia is an N-channel enhancement-mode TrenchMOS FET in SOT23 package, designed for low-voltage logic-level switching with V_DS = 60 V, I_D = 475 mA (T_sp = 25 °C), R_DS(on) ≤ 2 Ω at V_GS = 10 V, and fast switching (t_on = 2.5 ns typ). It serves as a compact load switch in portable power management and level translation circuits.

For engineers reviewing the 2N7002F,215 datasheet, 2N7002F,215 pinout, 2N7002F,215 application, or 2N7002F,215 equivalent, key selection criteria include gate threshold voltage (V_GS(th) = 1–2.5 V), thermal resistance (R_th(j-sp) = 150 K/W), safe operating area under pulsed conditions, and compatibility with 3.3 V/5 V logic drive.

Technical Context

This device uses TrenchMOS technology to achieve low R_DS(on) and high-speed switching while maintaining robust ESD tolerance (HBM > 2 kV). Its gate threshold is optimized for direct drive from standard CMOS outputs without external level shifting.

The integrated source-drain diode supports bidirectional current flow in low-power DC-DC converter synchronous rectification and reverse polarity protection, with V_SD = 0.85 V at I_S = 300 mA and t_rr = 30 ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports rail-to-rail operation up to 48 V DC systems without breakdown risk.
I_D (continuous)	475 mA at T_sp = 25 °C - Sufficient for driving small solenoids, LEDs, or logic inputs in space-constrained PCBs.
R_DS(on)	0.78 Ω typ at V_GS = 10 V - Enables <100 mW conduction loss at 400 mA, critical for battery-powered efficiency.
t_on/t_off	2.5 ns / 11 ns typ - Allows clean switching at >10 MHz clock rates in PWM dimming or signal routing.
V_GS(th)	1–2.5 V at I_D = 0.25 mA - Ensures reliable turn-on with 3.3 V microcontroller GPIOs without gate boosting.
C_iss	31 pF typ - Minimizes capacitive loading on driving ICs and reduces gate drive energy requirements.
P_tot	0.83 W at T_sp = 25 °C - Defines maximum steady-state power handling before thermal derating begins.

Pinout & Package

2N7002F,215 is housed in a standard SOT23 (TO-236AB) plastic surface-mounted package with 3 leads, optimized for automated assembly and thermal performance on FR-4 PCBs with minimum footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting logic-level voltage; requires no series resistor for 3.3 V/5 V drive due to low input capacitance (C_iss = 31 pF).
2 (S)	Source	Reference node for gate control; internally tied to substrate; used as common return path in low-side switch configurations.
3 (D)	Drain	High-side output node; connects to load; handles full switched current and must be routed with adequate copper area for thermal dissipation.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 3.3 V systems.
TrenchMOS architecture	Reduces R_DS(on) by ~30% vs planar MOSFETs of same die size - improves power density in wearables and IoT nodes.
Fast switching speed	t_on + t_off < 15 ns - minimizes transition losses in high-frequency DC-DC converters and LED drivers.
Integrated body diode	V_SD = 0.85 V at 300 mA - enables use in reverse-polarity protection and synchronous rectifier topologies without external diode.
SOT23 package	Standardized footprint compatible with JEDEC J-STD-020 reflow profiles - ensures manufacturability across global EMS providers.

Applications

LED Driver Switching

USB Port Power Control

Use Scenario: Driving RGB LED strings in smart lighting modules where MCU GPIOs directly control individual color channels.

IC Role / Device Role / Timing Role: Low-side switch enabling PWM dimming at 1–20 kHz with minimal gate drive overhead.

Use Value: R_DS(on) ≤ 2 Ω limits I²R loss to <320 mW at 400 mA, preserving battery life in portable fixtures.

Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals in host controllers with strict inrush current limits.

IC Role / Device Role / Timing Role: Load switch with controlled turn-on slew rate via gate resistor, preventing USB enumeration failure.

Use Value: Fast t_on (2.5 ns) allows precise timing alignment with USB suspend/resume signaling sequences.

Reverse Polarity Protection

Logic-Level Signal Translation

Use Scenario: Protecting 3.3 V microcontroller I/O pins from accidental negative supply connection in field-deployed sensors.

IC Role / Device Role / Timing Role: Source-follower configured MOSFET acting as ideal diode with forward drop <0.85 V.

Use Value: Integrated body diode and low V_GS(th) enable passive protection without external components or voltage drop penalties.

Use Scenario: Translating 1.8 V logic signals from ultra-low-power sensor ICs to 3.3 V interface buses in industrial gateways.

IC Role / Device Role / Timing Role: Level shifter using gate-controlled conduction between isolated voltage domains.

Use Value: C_iss = 31 pF and t_on < 10 ns support clean translation of signals up to 25 MHz without distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	R_DS(on) = 0.55 Ω @ V_GS = 4.5 V; higher ID rating (600 mA); SOT23-3 package identical	Better suited for higher-current loads (>500 mA) where lower conduction loss is critical	Select when system current exceeds 475 mA but board layout cannot accommodate larger packages
BSS138DW-7-F	Dual N-channel in SOT363; R_DS(on) = 3.5 Ω @ V_GS = 4.5 V; higher V_GS(th) (1.5 V min)	Offers dual-channel integration for matched pair switching (e.g., H-bridge half-bridge)	Choose when space-constrained designs require two synchronized switches in one footprint

Compared with DMN2004K-7 and BSS138DW-7-F, the 2N7002F,215 delivers optimal balance of cost, speed, and gate drive simplicity for single-channel 3.3 V–5 V logic switching below 475 mA, with proven reliability in automotive infotainment and industrial PLC I/O modules.

Availability

2N7002F,215 is available at Aetrix Electronics and suitable for USB power delivery, LED backlight control, reverse polarity protection, and logic-level signal translation requiring stable component supply across high-mix, low-volume production runs.

Supply support for 2N7002F,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.

The 2N7002F,215 belongs to Nexperia's TrenchMOS logic-level FET product line, engineered for high-speed, low-threshold switching in space- and power-sensitive applications like wearables and IoT edge nodes.

FAQ

Is the 2N7002F,215 suitable for 1.8 V logic drive?

No - its gate threshold voltage range is 1–2.5 V at I_D = 0.25 mA, but full enhancement (R_DS(on) ≤ 2 Ω) requires V_GS ≥ 4.5 V. At 1.8 V, R_DS(on) exceeds 10 Ω, causing excessive conduction loss. Use BSS138 or NX3008NB for true 1.8 V compatibility.

What is the maximum continuous drain current at 85 °C ambient?

At T_sp = 85 °C, the normalized current derating factor is ~75% per Figure 2, yielding I_D ≈ 356 mA (75% × 475 mA). This assumes proper PCB copper area and still-air conditions; actual value depends on solder point temperature and layout thermal design.

Does the 2N7002F,215 have built-in ESD protection?

Yes - it meets HBM ESD rating > 2 kV per JESD22-A114, verified in Nexperia's qualification testing. No external TVS diode is required for typical board-level ESD events, though system-level protection remains recommended for harsh environments.

Can this MOSFET replace a bipolar transistor in a digital switch application?

Yes - its logic-level gate drive, negligible base current requirement, and faster switching (vs. BJT saturation delay) make it superior to general-purpose BJTs like BC847 in most digital switching roles. However, verify that the load does not require negative voltage swing capability, which BJTs can provide in emitter-follower configurations.

2N7002F,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: TrenchMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 475mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.69 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 830mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

2N7002F,215 FAQ

1.How can I place an order for 2N7002F,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002F,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002F,215 reliable?

The price and inventory of 2N7002F,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002F,215 is usually 5 days.

3.What payment methods are accepted for 2N7002F,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002F,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002F,215?

2N7002F,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002F,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002F,215?

For technical support, including 2N7002F,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002F,215 requirements.

6.How does Aetrix verify that 2N7002F,215 is sourced from the original manufacturer or authorized distributors?

All 2N7002F,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002F,215 meets industry standards.

7.What is the process for return or replacement of 2N7002F,215?

All 2N7002F,215 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002F,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002F,215 part is unused and in its original packaging.

Return procedure for 2N7002F,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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