Diodes Incorporated 2N7002H-13

Overview

2N7002H-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 60V V_DS, 7.5Ω R_DS(on) at V_GS = 5V, and 210mA continuous drain current at T_A = +25°C. It delivers low gate threshold (2.0–3.0V), fast switching (t_D(on) = 3.7ns), and low input capacitance (C_iss = 26pF), enabling efficient load switching in space-constrained power management circuits.

For engineers reviewing the 2N7002H-13 datasheet, 2N7002H-13 pinout, 2N7002H-13 application, or 2N7002H-13 equivalent, key selection criteria include verified R_DS(on) at 5V drive, SOT23 thermal performance (R_θJA = 249°C/W on 1"×1" 2oz Cu), body diode recovery (t_rr = 9.3ns), and AEC-Q101 qualification readiness for automotive-grade variants.

Technical Context

This discrete MOSFET operates as a low-side switch with enhancement-mode gate control, requiring ≥2.0V V_GS(th) to initiate conduction and fully enhancing at V_GS ≥ 4.5V. Its R_DS(on) remains stable across −55°C to +150°C junction temperature, supported by normalized on-resistance curves showing <15% drift over full range.

The device integrates a monolithic body diode with V_SD = 0.78–1.5V at I_S = 115mA and exhibits controlled reverse recovery (Q_rr = 3.5nC, t_rr = 9.3ns) under dI/dt = 100A/μs - critical for minimizing switching losses in inductive load control.

Key Specifications

Pinout & Package

Package: SOT23 - surface-mount, 3-terminal plastic case (UL 94V-0), 0.008g weight, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004K-7 and NTR4501PT1G, the 2N7002H-13 offers optimal balance of 5V-compatible threshold, proven 9.3ns body diode recovery, and JEDEC-qualified reliability - making it preferred for cost-sensitive, noise-immune 100–200mA switching where gate drive simplicity and thermal predictability are critical.

Availability

2N7002H-13 is available at Aetrix Electronics and suitable for LED driver switching, microcontroller GPIO expansion, and motor control interface applications requiring stable component supply and consistent SOT23 assembly compatibility.

Supply support for 2N7002H-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and the Americas.

The 2N7002H belongs to Diodes' general-purpose logic-level MOSFET product line, engineered for high-efficiency, low-voltage switching in consumer, industrial, and automotive-qualified systems where compact size and robust JEDEC reliability are mandatory.

FAQ

Is the 2N7002H-13 suitable for 3.3V microcontroller GPIO drive?

Yes. With a guaranteed gate threshold voltage of 2.0–3.0V and typical R_DS(on) of 3.0Ω at V_GS = 3.3V (per Figure 4), the 2N7002H-13 fully enhances using standard 3.3V logic outputs. Its low input capacitance (26pF) prevents loading issues, and no external gate resistor is needed for static switching below 100kHz.

What is the maximum safe operating frequency for PWM switching?

Based on measured t_D(on) = 3.7ns and t_D(off) = 8.4ns, the 2N7002H-13 supports clean PWM operation up to 5–10MHz in low-duty-cycle, low-current (<100mA) applications. For 200mA loads, practical limits are ~1MHz due to thermal constraints on the SOT23 package's 249°C/W R_θJA.

Does this part have an integrated body diode, and what are its characteristics?

Yes. The 2N7002H-13 includes a monolithic parasitic body diode between source and drain. Its forward voltage is 0.78–1.5V at 115mA (Figure 9), and reverse recovery time is 9.3ns with Q_rr = 3.5nC under dI/dt = 100A/μs - enabling use in flyback paths for inductive loads without external diodes in many cases.

How does thermal performance differ between FR-4 and high-copper PCB layouts?

On standard FR-4 with minimum pads, R_θJA = 341°C/W limits continuous power to 370mW. On a 1"×1" 2oz copper pad, R_θJA improves to 249°C/W, raising max power to 510mW - a 37% gain. This directly extends safe I_D from 170mA to 210mA at +25°C ambient, critical for sustained motor or LED load operation.