NXP Semiconductors 2N7002K,215

Overview

2N7002K,215 from Nexperia is an N-channel enhancement-mode TrenchMOS™ logic-level power MOSFET in SOT23 package, rated for 60 V V_DS, 340 mA continuous drain current at 25 °C, 3.9 Ω max R_DS(on) at V_GS = 10 V, and featuring integrated gate-source ESD protection diodes. It serves as a low-voltage, high-speed switching element in compact load-switching and signal routing applications.

For engineers reviewing the 2N7002K,215 datasheet, 2N7002K,215 pinout, 2N7002K,215 application, or 2N7002K,215 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1–2 V), subminiature SOT23 footprint, fast switching (t_on/t_off ≤ 10/15 ns), and robust thermal performance with R_th(j-sp) = 150 K/W.

Technical Context

The 2N7002K,215 employs TrenchMOS™ technology to achieve low on-resistance and fast switching in a 3-pin surface-mount package. Its gate threshold voltage (1–2 V at 25 °C) ensures reliable turn-on with 3.3 V and 5 V logic systems, while its 1 kV HBM ESD rating supports handling in standard assembly environments.

It operates within −65 °C to +150 °C junction temperature range and delivers stable R_DS(on) up to 7.2 Ω at 150 °C under V_GS = 10 V. The device integrates a source-drain body diode with 300 mA forward current capability and 30 ns reverse recovery time, enabling use in freewheeling and clamping roles.

Key Specifications

Pinout & Package

SOT23 plastic surface-mounted package (TO-236AB), 3-lead, 1.3 mm × 2.9 mm × 1.0 mm footprint, optimized for automated placement and high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004K-7 and BSS138, the 2N7002K,215 offers balanced performance for general-purpose logic-level switching-lower cost than DMN2004K-7 and broader V_GS(th) tolerance than BSS138-making it ideal for cost-sensitive, medium-current applications where design margin is prioritized over peak efficiency.

Availability

2N7002K,215 is available at Aetrix Electronics and suitable for LED drivers, microcontroller I/O expansion, and USB port power control requiring stable component supply across industrial, computing, and consumer electronics programs.

Supply support for 2N7002K,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The 2N7002K,215 belongs to Nexperia's TrenchMOS™ logic-level FET product line, engineered for compact, low-power switching in space-constrained digital systems where 3.3 V/5 V compatibility and reliability are essential.

FAQ

What is the maximum continuous drain current for the 2N7002K,215 at 100 °C?

The 2N7002K,215 supports 215 mA continuous drain current at T_sp = 100 °C with V_GS = 10 V, per its limiting values table. This derating reflects thermal constraints of the SOT23 package; designers must verify PCB copper area and ambient conditions to maintain safe junction temperature below 150 °C in sustained operation.

Does the 2N7002K,215 have built-in ESD protection?

Yes, the 2N7002K,215 integrates gate-source ESD protection diodes and is rated for 1 kV Human Body Model (HBM) per IEC 61000-4-2. This eliminates the need for external ESD components in most standard assembly processes, though system-level surge protection remains recommended for end-equipment compliance.

Can the 2N7002K,215 be used with 3.3 V microcontroller GPIOs?

Yes-the 2N7002K,215 has a guaranteed gate-source threshold voltage of 1–2 V at 25 °C, ensuring full enhancement with 3.3 V logic. At V_GS = 4.5 V, R_DS(on) is ≤5.3 Ω, delivering sufficient drive strength for typical indicator and sensor loads without external gate drivers.

What is the thermal resistance from junction to solder point for the 2N7002K,215?

The 2N7002K,215 has a maximum thermal resistance R_th(j-sp) of 150 K/W, measured from junction to solder point under transient conditions. This value enables accurate thermal modeling when the device is mounted on standard FR-4 PCBs with minimum copper footprint, supporting reliable operation up to 830 mW total power dissipation at 25 °C.

Is the body diode of the 2N7002K,215 suitable for freewheeling in inductive loads?

Yes-the intrinsic source-drain body diode of the 2N7002K,215 supports 300 mA continuous forward current and exhibits 30 ns reverse recovery time with 30 nC recovered charge. These characteristics make it suitable for low-energy freewheeling in relay coils, small solenoids, and sensor bias networks where fast recovery and low forward voltage (0.93–1.5 V) reduce energy loss.