Nexperia USA Inc. 2N7002PSZ

Overview

2N7002PS from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT363 (SC-88) package, rated for 60 V drain-source voltage, 320 mA continuous drain current per transistor, and 1.0 Ω typical R_DS(on) at V_GS = 10 V. It serves as a compact, logic-level-compatible low-side load switch or high-speed line driver in space-constrained automotive and industrial control modules.

For engineers reviewing the 2N7002PS datasheet, 2N7002PS pinout, 2N7002PS application, or 2N7002PS equivalent, key selection criteria include AEC-Q101 qualification, dual-channel isolation, thermal resistance of 390 K/W (junction-to-ambient, FR4 PCB), and fast switching with t_d(off) ≤ 20 ns - critical for relay driving and PWM-controlled DC loads.

Technical Context

This dual MOSFET integrates two independent N-channel channels in a single 6-pin TSSOP package, sharing no internal connection between transistors - enabling isolated low-side switching or complementary half-bridge configurations with external gate control. Each channel features trench-gate architecture for reduced R_DS(on) and improved gate charge efficiency.

It operates with logic-level gate drive (V_GS(th) = 1.1–2.4 V), supports pulsed peak drain current up to 1.2 A, and maintains stable performance across −55 °C to +150 °C ambient range. Thermal derating follows a defined curve: power dissipation drops to 280 mW at T_amb = 100 °C and 990 mW at T_sp = 25 °C (solder point reference).

Key Specifications

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 6-lead, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body size; optimized for reflow soldering with exposed drain pads on pins 1 and 6.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN2041LSD-13 and FDMA1023NZ, the 2N7002PS uniquely balances AEC-Q101 qualification, 60 V capability, dual-channel isolation, and ultra-small SOT363 footprint - making it optimal for automotive body electronics and compact industrial controllers where voltage headroom and qualification matter more than raw current.

Availability

2N7002PS is available at Aetrix Electronics and suitable for automotive body control modules, industrial I/O cards, and portable medical device power sequencing requiring stable component supply and long-term lifecycle support.

Supply support for 2N7002PS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and mobile markets.

The 2N7002PS belongs to Nexperia's TrenchMOS portfolio, engineered specifically for space-constrained, logic-driven switching applications demanding AEC-Q101 compliance and robust thermal performance on standard PCBs.

FAQ

Is the 2N7002PS pin-compatible with the single-channel 2N7002?

No - the 2N7002PS is a dual-channel device in SOT363 (6-pin) with interleaved pinout (S1-G1-D2-S2-G2-D1), whereas the single-channel 2N7002 uses SOT23 (3-pin) with S-G-D order. Layouts and PCB footprints are incompatible; no mechanical or electrical substitution is possible without redesign.

What is the maximum safe operating frequency for PWM switching with the 2N7002PS?

Based on t_d(on) ≤ 6 ns, t_r ≤ 4 ns, t_d(off) ≤ 20 ns, and t_f ≤ 5 ns, the device supports clean switching up to 2–3 MHz in low-duty-cycle applications. For continuous 50% duty-cycle operation, thermal limits constrain practical use to ≤500 kHz at full 320 mA load on standard FR4.

Does the 2N7002PS integrate body diodes, and are they usable in reverse-conduction applications?

Yes - each channel includes an intrinsic source-drain diode with V_SD = 0.75 V typ at 115 mA. These diodes support freewheeling in inductive loads (e.g., relay coils) but are not rated for sustained reverse current; max IS = 320 mA continuous, and reverse recovery is uncharacterized - avoid use in synchronous rectification.

How does thermal performance change when both channels operate simultaneously?

Simultaneous operation increases total power dissipation linearly, but junction-to-ambient thermal resistance remains ~390 K/W per transistor due to shared package thermal mass. Derating must follow Fig. 1: at T_amb = 75 °C, total P_tot per device is limited to ~280 mW - meaning each channel should be restricted to ≤140 mW (≈120 mA at 1.0 Ω R_DS(on)) for safe continuous operation.