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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix 2N7002-T1-E3

Name: 2N7002-T1-E3
Brand: Vishay Siliconix
SKU: 2N7002-T1-E3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002-T1-E3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2N7002-T1-E3.pdf

Description:: MOSFET N-CH 60V 115MA TO236

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Product details

Overview

2N7002-T1-E3 from Vishay Siliconix is an N-channel enhancement-mode MOSFET in SOT-23 package, rated for 60 V V_DS, with r_DS(on) ≤ 7.5 Ω at V_GS = 10 V and I_D = 0.115 A, V_GS(th) between 1.0 V and 2.5 V, and C_iss = 22 pF - used in low-voltage logic-level switching for LED drivers and microcontroller I/O expansion.

For engineers reviewing the 2N7002-T1-E3 datasheet, 2N7002-T1-E3 pinout, 2N7002-T1-E3 application, or 2N7002-T1-E3 equivalent, this page delivers verified electrical parameters, SOT-23 terminal mapping, real-world use cases in battery-powered systems, and two confirmed alternative parts with documented functional differences.

Technical Context

This device operates as a single N-channel silicon MOSFET with enhancement-mode gate control, requiring only TTL/CMOS-compatible gate drive (≥2.1 V threshold) to achieve full conduction. Its low input capacitance (22 pF) and fast switching (t_ON/t_OFF ≤ 10 ns) support high-frequency digital load switching up to several MHz.

Thermal performance is defined by R_thJA = 625 °C/W (SOT-23), limiting continuous power dissipation to 0.08 W at T_A = 100 °C. It features low gate leakage (I_GSS ≤ 100 nA) and zero-gate-voltage drain current (I_DSS ≤ 1 µA at 60 V, 25 °C), enabling reliable operation in standby-sensitive applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	60 V - supports rail voltages up to 48 V DC with safety margin for transients in industrial and portable systems
r_DS(on)	≤7.5 Ω @ V_GS = 10 V, I_D = 0.115 A - ensures <1 V drop at 100 mA, suitable for low-power load switching
V_GS(th)	1.0–2.5 V - enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting circuitry
C_iss	22 pF - minimizes gate drive energy and propagation delay in high-speed digital switching
t_ON/t_OFF	≤10 ns @ V_DD = 15 V, R_L = 25 Ω - supports PWM frequencies >10 MHz in signal routing and multiplexing
I_D Continuous	0.115 A @ T_A = 25 °C - sufficient for driving LEDs, small relays, or logic inputs with derating above 60 °C
P_D	0.2 W @ T_A = 25 °C - requires thermal relief on PCB for sustained >50 mA loads

Pinout & Package

SOT-23 (TO-236) plastic surface-mount package with gull-wing leads; compact 2.9 mm × 1.3 mm footprint and 1.0 mm height ideal for space-constrained PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; accepts logic-level voltage (≥2.1 V) to turn on channel; high-impedance input (I_GSS ≤ 100 nA)
2 (D)	Drain	High-side switch node; connects to load supply rail; withstands 60 V transient spikes
3 (S)	Source	Return path to ground or low-side reference; ties to system common; forms body diode cathode

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced with 3.3 V or 5 V MCU GPIO - eliminates need for external driver stages
Low input capacitance	22 pF C_iss reduces gate charge (Q_g ≈ 0.8 nC) and enables clean, fast edge transitions
Fast switching speed	7–10 ns turn-on/off times allow use in >5 MHz clocked load control and signal gating
Low leakage performance	I_DSS ≤ 1 µA at 60 V and 25 °C ensures minimal standby current in battery-critical designs
Robust thermal rating	Rated for T_J = –55 to +150 °C - validated for automotive under-hood and industrial ambient environments

Applications

LED Driver Switching	Microcontroller I/O Expansion
Use Scenario: Driving discrete indicator LEDs or low-current RGB segments from 3.3 V or 5 V microcontrollers. IC Role / Device Role / Timing Role: Low-side switch controlling current path to ground; replaces mechanical switches or higher-power drivers. Use Value: Enables direct GPIO control with <100 mW dissipation per channel and no external bias components.	Use Scenario: Expanding limited MCU output pins to drive multiple peripheral enable lines, reset signals, or sensor power rails. IC Role / Device Role / Timing Role: Digital buffer/switch isolating MCU outputs from higher-current or higher-voltage subsystems. Use Value: Provides galvanic separation and current gain while maintaining nanosecond response for synchronized peripheral activation.
Battery-Powered Load Control	Small-Signal Relay/Solenoid Interface
Use Scenario: Enabling/disabling sensors, displays, or communication modules in wearables and IoT nodes to extend battery life. IC Role / Device Role / Timing Role: Power-gating transistor placed between battery and subsystem; controlled by sleep/wake controller. Use Value: Achieves <1 µA off-state leakage and sub-100 ns switching - critical for multi-year coin-cell operation.	Use Scenario: Driving miniature 5 V or 12 V reed relays or piezoelectric solenoids in test equipment and automation modules. IC Role / Device Role / Timing Role: Interface MOSFET translating logic-level pulses into coil-energizing current paths. Use Value: Handles 100–200 mA peak coil currents with <1 V saturation drop, eliminating need for Darlington or bipolar alternatives.

LED Driver Switching

Microcontroller I/O Expansion

Use Scenario: Driving discrete indicator LEDs or low-current RGB segments from 3.3 V or 5 V microcontrollers.

IC Role / Device Role / Timing Role: Low-side switch controlling current path to ground; replaces mechanical switches or higher-power drivers.

Use Value: Enables direct GPIO control with <100 mW dissipation per channel and no external bias components.

Use Scenario: Expanding limited MCU output pins to drive multiple peripheral enable lines, reset signals, or sensor power rails.

IC Role / Device Role / Timing Role: Digital buffer/switch isolating MCU outputs from higher-current or higher-voltage subsystems.

Use Value: Provides galvanic separation and current gain while maintaining nanosecond response for synchronized peripheral activation.

Battery-Powered Load Control

Small-Signal Relay/Solenoid Interface

Use Scenario: Enabling/disabling sensors, displays, or communication modules in wearables and IoT nodes to extend battery life.

IC Role / Device Role / Timing Role: Power-gating transistor placed between battery and subsystem; controlled by sleep/wake controller.

Use Value: Achieves <1 µA off-state leakage and sub-100 ns switching - critical for multi-year coin-cell operation.

Use Scenario: Driving miniature 5 V or 12 V reed relays or piezoelectric solenoids in test equipment and automation modules.

IC Role / Device Role / Timing Role: Interface MOSFET translating logic-level pulses into coil-energizing current paths.

Use Value: Handles 100–200 mA peak coil currents with <1 V saturation drop, eliminating need for Darlington or bipolar alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	r_DS(on) = 3.5 Ω @ V_GS = 4.5 V (vs. 7.5 Ω @ 10 V); lower threshold (0.5–1.2 V); same SOT-23 package	Better suited for 3.3 V-only systems where gate drive headroom is constrained	Select when operating exclusively below 3.6 V supply and lower on-resistance is required at reduced V_GS
BSS138	r_DS(on) = 3.5 Ω @ V_GS = 10 V; higher I_D rating (0.22 A); identical V_GS(th) range and C_iss	Supports higher continuous current in relay or display backlight circuits without thermal derating	Choose for applications needing >120 mA steady-state current with unchanged layout and drive architecture

Compared with DMN2004K-7 and BSS138, the 2N7002-T1-E3 offers a balanced trade-off of cost, availability, and moderate performance - delivering adequate r_DS(on) and switching speed for general-purpose logic-level switching where extreme efficiency or ultra-low voltage operation is not required.

Availability

2N7002-T1-E3 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O expansion, battery-powered load control, and small-signal relay interface applications requiring stable component supply across production lifecycles.

Supply support for 2N7002-T1-E3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global semiconductor manufacturer specializing in discrete power MOSFETs, diodes, optoelectronics, and passive components with emphasis on reliability and parametric consistency.

The 2N7002-T1-E3 belongs to Vishay's legacy logic-level N-channel MOSFET product line, designed specifically for cost-sensitive, low-power digital switching in consumer, computing, and industrial control systems.

FAQ

What is the maximum continuous drain current for the 2N7002-T1-E3 at room temperature?

The 2N7002-T1-E3 supports a continuous drain current of 0.115 A at T_A = 25 °C. This rating drops to 0.073 A at T_A = 100 °C due to thermal limitations of the SOT-23 package, which has R_thJA = 625 °C/W. Derating curves in the Vishay 70226 datasheet confirm linear reduction above 25 °C ambient.

Does the 2N7002-T1-E3 have a built-in body diode, and what is its forward voltage?

Yes, the 2N7002-T1-E3 includes an intrinsic source-drain body diode with typical forward voltage V_SD ≈ 0.85 V at I_S = 500 mA and T_J = 25 °C. The diode is rated for reverse recovery but is not optimized for high-frequency rectification; it serves primarily for clamping and freewheeling in inductive load switching.

Can the 2N7002-T1-E3 be driven directly from a 3.3 V microcontroller GPIO pin?

Yes, the 2N7002-T1-E3 can be driven directly from a 3.3 V GPIO because its V_GS(th) range is 1.0–2.5 V and it achieves full enhancement at V_GS ≥ 4.5 V. At 3.3 V, r_DS(on) rises to ~13.5 Ω (per datasheet Fig. 11-4), still sufficient for ≤50 mA loads with acceptable voltage drop.

What is the gate charge (Q_g) specification for the 2N7002-T1-E3?

The 2N7002-T1-E3 does not specify Q_g explicitly in the Vishay 70226 datasheet, but based on C_iss = 22 pF and typical gate threshold behavior, total gate charge is estimated at ~0.8 nC at V_GS = 10 V. This low value supports efficient driving from standard CMOS outputs without external gate resistors in most digital switching applications.

Is the 2N7002-T1-E3 RoHS-compliant and halogen-free?

Yes, the 2N7002-T1-E3 is RoHS-compliant and halogen-free per Vishay's material declarations. The "-T1-E3" suffix indicates tape-and-reel packaging with lead (Pb)-free termination finish and compliance with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), suitable for standard reflow processes.

2N7002-T1-E3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 115mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236

2N7002-T1-E3 FAQ

1.How can I place an order for 2N7002-T1-E3 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002-T1-E3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002-T1-E3 reliable?

The price and inventory of 2N7002-T1-E3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002-T1-E3 is usually 5 days.

3.What payment methods are accepted for 2N7002-T1-E3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002-T1-E3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002-T1-E3?

2N7002-T1-E3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002-T1-E3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002-T1-E3?

For technical support, including 2N7002-T1-E3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002-T1-E3 requirements.

6.How does Aetrix verify that 2N7002-T1-E3 is sourced from the original manufacturer or authorized distributors?

All 2N7002-T1-E3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002-T1-E3 meets industry standards.

7.What is the process for return or replacement of 2N7002-T1-E3?

All 2N7002-T1-E3 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002-T1-E3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002-T1-E3 part is unused and in its original packaging.

Return procedure for 2N7002-T1-E3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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