NXP Semiconductors 2N7002T,215

Overview

2N7002T,215 from Nexperia (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS FET in SOT23 package, rated for 60 V V_DS, 300 mA continuous drain current, and ≤5 Ω R_DS(on) at V_GS = 10 V. It serves as a logic-level switch in low-power load control, level translation, and high-speed line driving circuits.

For engineers reviewing the 2N7002T,215 datasheet, 2N7002T,215 pinout, 2N7002T,215 application, or 2N7002T,215 equivalent, key selection criteria include gate threshold voltage (1–2.5 V), fast switching (t_on/t_off ≤10/12 ns), thermal resistance (R_th(j-sp) = 150 K/W), and compatibility with 3.3 V/5 V logic interfaces.

Technical Context

This discrete MOSFET uses TrenchMOS technology to achieve low on-resistance and fast switching with logic-level gate drive. Its gate-source threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V at 25 °C, enabling direct interface with 3.3 V microcontrollers without level-shifting circuitry.

The device exhibits R_DS(on) = 2.8–5 Ω at V_GS = 10 V and ID = 500 mA, and 3.8–5.3 Ω at V_GS = 4.5 V and ID = 75 mA - confirming robust performance across standard logic supply rails. Dynamic parameters include C_iss = 25–40 pF and t_on/t_off = 3–10 ns / 12 ns, supporting high-frequency switching up to several MHz.

Key Specifications

Pinout & Package

2N7002T,215 is housed in a plastic surface-mounted SOT23 (TO-236AB) package with 3 leads and standardized footprint per JEDEC TO-236AB outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with DMN2004K-7 and BSS138, the 2N7002T,215 offers the best balance of 300 mA current capability, 60 V breakdown margin, and proven reliability in industrial control and power management - making it ideal for general-purpose logic-level switching where robustness and wide V_GS tolerance are prioritized.

Availability

2N7002T,215 is available at Aetrix Electronics and suitable for LED driver circuits, logic-level translation, and low-power load switching requiring stable component supply and long-term manufacturability.

Supply support for 2N7002T,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and automotive-grade quality.

The 2N7002T,215 belongs to Nexperia's logic-level N-channel MOSFET product line, engineered for space-constrained, low-power switching applications in consumer, industrial, and computing systems where gate drive simplicity and thermal efficiency are critical.

FAQ

What is the maximum drain-source voltage rating for the 2N7002T,215?

The 2N7002T,215 has a maximum drain-source voltage (V_DS) rating of 60 V under all operating conditions per IEC 60134 absolute maximum ratings. This allows safe use in 24 V and 48 V nominal systems with transient margin. The device maintains this rating across its full junction temperature range (−65 °C to +150 °C), and V_DS must not be exceeded even during brief voltage spikes.

Can the 2N7002T,215 be driven directly by a 3.3 V microcontroller GPIO?

Yes, the 2N7002T,215 can be driven directly by a 3.3 V microcontroller GPIO because its gate-source threshold voltage (V_GS(th)) is specified from 1.0 V to 2.5 V at 25 °C. At V_GS = 3.3 V, the device achieves full enhancement with R_DS(on) ≤ 5 Ω, ensuring low conduction loss. No external level shifter or gate driver is required for typical 3.3 V logic interfaces.

What is the thermal resistance from junction to solder point for the 2N7002T,215?

The thermal resistance from junction to solder point (R_th(j-sp)) for the 2N7002T,215 is 150 K/W under standard mounting conditions on a PCB with minimum footprint in still air. This value enables accurate thermal modeling of power dissipation in real-world layouts and informs derating curves for continuous operation above 25 °C ambient or solder point temperature.

Does the 2N7002T,215 have integrated ESD protection?

The 2N7002T,215 does not include dedicated on-chip ESD protection diodes. Its gate oxide is rated for ±40 V peak gate-source voltage (V_GS(M)) in pulsed conditions, but sustained ESD events beyond human-body model (HBM) Class 1B (≥2 kV) may cause damage. External TVS or series resistance is recommended in handling and board-level design when exposed to user-accessible ports or unshielded cables.

What is the typical input capacitance (C_iss) of the 2N7002T,215 and how does it affect gate drive?

The 2N7002T,215 has a typical input capacitance (C_iss) of 25–40 pF at V_DS = 10 V and f = 1 MHz. This low capacitance minimizes gate charge requirements (Q_g ≈ 0.8 nC), allowing fast switching with modest drive strength - e.g., a 10 kΩ pull-up resistor achieves ~100 ns rise time. It also reduces capacitive loading on driving logic, preserving signal integrity in high-speed digital interfaces.