Diodes Incorporated 2N7002TC

Overview

2N7002TC from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 60V V_DSS, 5Ω R_DS(ON) @ V_GS = 10V, and 210mA continuous drain current at +25°C. It delivers low gate threshold voltage (1.0–2.5V), fast switching (t_F = 5.6ns), and low input capacitance (C_iss = 22pF), enabling efficient load switching in space-constrained DC-DC converters and LED drivers.

For engineers reviewing the 2N7002TC datasheet, 2N7002TC pinout, 2N7002TC application, or 2N7002TC equivalent, key selection criteria include verified R_DS(ON) at 5V drive, JEDEC-qualified reliability for industrial ambient operation, thermal resistance (R_θJA = 241°C/W on 1"×1" 2oz copper), and RoHS-compliant matte tin plating for lead-free reflow compatibility.

Technical Context

This discrete power MOSFET operates as a low-side switch with enhancement-mode gate control, requiring positive V_GS to conduct. Its 1.0–2.5V V_GS(TH) enables direct interface with 3.3V/5V logic outputs, while its 223pC total gate charge supports high-frequency PWM operation up to several hundred kHz without excessive driver loss.

The device integrates a body diode with 0.78V forward voltage at 115mA, supporting freewheeling in inductive loads. Thermal performance is defined for two PCB conditions: 348°C/W on minimal FR-4 layout and 241°C/W on enhanced 2oz copper, directly informing heatsinking decisions in compact power stages.

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic package (2.90 × 2.40 × 1.025 mm), UL 94V-0 rated, moisture sensitivity level 1, matte tin-plated leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Compared with DMN2004K-7 and BS170, the 2N7002TC provides optimal balance of logic-level compatibility, SMT manufacturability, and JEDEC reliability-making it preferred for new industrial and consumer PCB designs where 5V gate drive and RoHS compliance are mandatory.

Availability

2N7002TC is available at Aetrix Electronics and suitable for LED driver switching, USB port power control, DC-DC converter synchronous rectification, and motor driver half-bridge low-side applications requiring stable component supply across production lifecycles.

Supply support for 2N7002TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers and manufacturing facilities across Asia and the Americas.

The 2N7002TC belongs to Diodes' general-purpose power MOSFET product line, engineered for high-efficiency, low-voltage switching in space-constrained industrial, computing, and consumer power-management circuits.

FAQ

Is the 2N7002TC suitable for 3.3V logic-level gate drive?

Yes. With a gate threshold voltage range of 1.0–2.5V and guaranteed R_DS(ON) of 7.5Ω at V_GS = 5V, the 2N7002TC fully enhances using standard 3.3V CMOS outputs. Its low input capacitance (22pF) further reduces required drive strength, making it compatible with most microcontroller GPIOs without external buffering.

What is the maximum junction temperature and how does it affect continuous current rating?

The 2N7002TC has a maximum junction temperature of +150°C. At +100°C ambient, its continuous drain current derates to 135mA (V_GS = 10V) due to thermal resistance limitations. On a 1"×1" 2oz copper PCB, R_θJA = 241°C/W defines this relationship-exceeding the thermal design envelope risks premature failure or parametric shift.

Does the 2N7002TC include integrated ESD protection?

No. The 2N7002TC does not integrate ESD protection circuitry. Its gate oxide is rated for ±20V continuous and ±40V pulsed gate-source voltage, meaning external TVS or series resistance must be used in environments with >2kV HBM risk. Layout best practices-such as minimizing gate loop area and avoiding floating gate traces-are essential for robustness.

How does the body diode performance impact its use in synchronous rectification?

The body diode exhibits V_SD = 0.78V at 115mA and low reverse recovery charge, enabling efficient freewheeling in buck converters. However, its forward voltage is higher than Schottky alternatives, so net efficiency gain depends on duty cycle and switching frequency-typically beneficial above 200kHz where conduction loss dominates over recovery loss.