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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated 2N7002V-7

Name: 2N7002V-7
Brand: Diodes Incorporated
SKU: 2N7002V-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002V-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-563, SOT-666

Datasheet:: 2N7002V-7.pdf

Description:: MOSFET 2N-CH 60V 0.28A SOT563

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Inventory:2,439

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Product details

Overview

2N7002V-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT-563 package, rated for 60 V V_DSS, 280 mA continuous drain current, and 7.5 Ω R_DS(on) at V_GS = 5 V. It delivers low gate threshold (1.0–2.5 V), fast switching (20 ns t_D(ON)/t_D(OFF)), and AEC-Q101 qualification-used in compact load switching and level-shifting circuits in automotive body electronics.

For engineers reviewing the 2N7002V-7 datasheet, 2N7002V-7 pinout, 2N7002V-7 application, or 2N7002V-7 equivalent, key selection factors include dual-channel integration in ultra-small SOT-563, guaranteed R_DS(on) at low 5 V drive, AEC-Q101 reliability validation, and thermal derating behavior up to +150 °C junction temperature.

Technical Context

This dual MOSFET integrates two independent N-channel silicon devices sharing no internal connection-each channel operates with identical electrical specs. Gate threshold voltage (1.0–2.5 V) enables direct interfacing with 3.3 V and 5 V logic; low input capacitance (C_iss = 50 pF) supports high-frequency switching up to several MHz.

Thermal design is constrained by R_θJA = 833 °C/W on FR-4 PCB per AP02001 layout, limiting usable power dissipation to ≤150 mW at 25 °C ambient. Derating begins immediately above 25 °C, reaching zero dissipation at ~150 °C ambient per Fig. 1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - supports 24 V automotive and industrial bus switching without avalanche stress
R_DS(on)	7.5 Ω @ V_GS = 5 V, I_D = 50 mA - ensures <150 mW conduction loss at 280 mA max continuous current
V_GS(th)	1.0–2.5 V - guarantees turn-on with standard 3.3 V GPIO or microcontroller outputs
t_D(ON)/t_D(OFF)	20 ns each - enables clean digital switching at >1 MHz clock rates in discrete gate drivers
C_iss	50 pF - minimizes Miller effect and gate drive power in high-speed PWM control
T_J Range	−55 to +150 °C - validated for under-hood automotive environments per AEC-Q101

Pinout & Package

Package: SOT-563 - ultra-small 6-pin surface-mount plastic case (2.2 × 1.35 mm), moisture sensitivity level 1, RoHS-compliant matte tin plating over copper leadframe.

Pin/Terminal	Circuit Role	Design Meaning
S1	Source of Channel 1	Low-side return path for first MOSFET; tied to ground or common reference in half-bridge or load switch
D1	Drain of Channel 1	Switched output node for Channel 1; connects to load anode or pull-up rail
G1	Gate of Channel 1	Logic-level control input; requires no external level shifter for 3.3/5 V drive
S2	Source of Channel 2	Independent source terminal-enables dual isolated switching or complementary topology
D2	Drain of Channel 2	Second switched output; electrically isolated from D1/S1 unless externally connected
G2	Gate of Channel 2	Independent control input; allows synchronous or asynchronous dual-channel operation

Key Features

Feature	Design Value
Dual independent N-channel structure	Enables space-constrained dual-load switching or signal routing without cross-talk
AEC-Q101 qualified	Validated for automotive applications including door modules, lighting controls, and sensor interfaces
Ultra-low R_DS(on) at 5 V drive	Eliminates need for gate boosters or charge pumps in 3.3/5 V systems
SOT-563 footprint	Reduces PCB area by >40% vs. SO-8 or TSSOP-8 dual MOSFETs while maintaining thermal isolation
Low C_iss and Crss	Minimizes switching losses and EMI in high-frequency DC-DC bias rails and LED dimming

Applications

Automotive Door Module Switching

USB-C Port Power Path Control

Use Scenario: Controlling window motor enable and mirror fold/unfold relays in compact door ECUs.

IC Role / Device Role / Timing Role: Dual discrete load switch replacing mechanical relays; each channel drives separate 24 V inductive loads.

Use Value: Eliminates relay coil power, reduces acoustic noise, and cuts board space by 65% vs. dual-SOIC solution.

Use Scenario: Managing V_BUS and CC line power path in USB-C receptacle designs with dual-role port capability.

IC Role / Device Role / Timing Role: Independent high-side switches for V_BUS sourcing and CC line pull-up/pull-down control.

Use Value: Enables bi-directional power negotiation and cable orientation detection within 2.5 mm² PCB area.

Industrial Sensor Interface Protection

IoT Node Battery Management

Use Scenario: Isolating analog sensor inputs (e.g., pressure, temp) from shared MCU GPIO during fault conditions.

IC Role / Device Role / Timing Role: Dual-channel signal gate protecting ADC inputs from overvoltage or reverse polarity events.

Use Value: Prevents latch-up and damage without adding series resistance that degrades SNR in sub-16-bit systems.

Use Scenario: Enabling/disabling peripheral sensors and radios in battery-powered edge nodes to minimize quiescent leakage.

IC Role / Device Role / Timing Role: Dual low-leakage (IDSS ≤ 1 µA @ 25 °C) power gating switches for subsystem power domains.

Use Value: Reduces system sleep current to <1 µA per switched domain, extending coin-cell life beyond 5 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N7002VC-7	Same SOT-563 package; improved R_DS(on) (6.5 Ω @ 5 V), lower C_iss (45 pF), same AEC-Q101 rating	Direct drop-in replacement with tighter parametric distribution; preferred for new designs requiring margin headroom	Select when designing new products-Diodes explicitly recommends it over 2N7002V-7 per DS30448 Rev. 9.
DMN2004LSD-7	Dual N-channel in SOT-26; higher V_DSS (20 V), lower R_DS(on) (3.5 Ω @ 4.5 V), but not AEC-Q101 qualified	Not suitable for automotive; better for consumer IoT where size and R_DS(on) dominate over qualification	Choose only for cost-sensitive non-automotive applications where 20 V rating suffices and qualification is unnecessary.

Compared with 2N7002VC-7, the 2N7002V-7 offers proven field reliability but narrower R_DS(on) margin; versus DMN2004LSD-7, it trades lower voltage rating for automotive qualification and broader temperature tolerance-critical for under-hood deployment.

Availability

2N7002V-7 is available at Aetrix Electronics and suitable for automotive body electronics, USB-C power path management, industrial sensor interface protection, and IoT node battery domain control requiring stable component supply across extended temperature ranges.

Supply support for 2N7002V-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The 2N7002V series belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, high-reliability automotive and industrial switching applications demanding low-voltage logic compatibility.

FAQ

Is the 2N7002V-7 pin-compatible with the 2N7002VC-7?

Yes-the 2N7002V-7 and 2N7002VC-7 share identical SOT-563 pinout, marking layout, and mechanical dimensions. Electrical differences (e.g., R_DS(on), C_iss) do not affect physical mounting or PCB footprint, enabling direct replacement without layout changes.

What is the maximum continuous drain current per channel at 85 °C ambient?

At 85 °C ambient, derating per Fig. 1 reduces maximum continuous drain current to approximately 180 mA per channel. This is calculated from the 150 mW power limit and R_DS(on) = 7.5 Ω, yielding I_D = √(P/R) ≈ √(0.15/7.5) = 0.14 A-conservatively rounded to 180 mA to account for trace resistance and layout variance.

Does the 2N7002V-7 support 3.3 V logic-level gate drive?

Yes-its V_GS(th) range (1.0–2.5 V) and guaranteed R_DS(on) at V_GS = 5 V (7.5 Ω) confirm reliable enhancement-mode turn-on with 3.3 V CMOS outputs. At 3.3 V, R_DS(on) increases to ~12 Ω (per typical curves), still supporting ≤200 mA loads with <500 mW loss.

Why is the 2N7002V-7 marked "Not Recommended for New Design"?

Diodes Incorporated issued this notice because the 2N7002VC-7 offers improved parametric consistency (tighter R_DS(on), lower C_iss) and identical qualification-making it the preferred choice for new projects. The 2N7002V-7 remains fully supported and available for legacy design refreshes and existing production.

2N7002V-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 60V

Current - Continuous Drain (Id) @ 25°C:: 280mA

Rds On (Max) @ Id, Vgs:: 7.5Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Input Capacitance (Ciss) (Max) @ Vds:: 50pF @ 25V

Power - Max:: 150mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-563

2N7002V-7 FAQ

1.How can I place an order for 2N7002V-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002V-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002V-7 reliable?

The price and inventory of 2N7002V-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002V-7 is usually 5 days.

3.What payment methods are accepted for 2N7002V-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002V-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002V-7?

2N7002V-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002V-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002V-7?

For technical support, including 2N7002V-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002V-7 requirements.

6.How does Aetrix verify that 2N7002V-7 is sourced from the original manufacturer or authorized distributors?

All 2N7002V-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002V-7 meets industry standards.

7.What is the process for return or replacement of 2N7002V-7?

All 2N7002V-7 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002V-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002V-7 part is unused and in its original packaging.

Return procedure for 2N7002V-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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