Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated 2N7002VAC-7

Part No.:
2N7002VAC-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
Aetrix2N7002VAC-7.pdf
Description:
MOSFET 2N-CH 60V 0.28A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N7002VAC-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 60 V VDSS, 280 mA continuous drain current, and 7.5 Ω RDS(on) at VGS = 5 V. It delivers low gate threshold (1.0–2.5 V), fast switching (tD(ON)/tD(OFF) ≤ 20 ns), and ultra-small footprint for space-constrained load switching in portable electronics.

For engineers reviewing the 2N7002VAC-7 datasheet, 2N7002VAC-7 pinout, 2N7002VAC-7 application, or 2N7002VAC-7 equivalent, key selection criteria include dual-channel integration, 60 V breakdown rating, sub-2.5 V gate drive compatibility, thermal resistance of 833 °C/W, and AEC-Q101-qualified automotive-grade variants (e.g., 2N7002VACQ-7).

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing no internal connection-enabling discrete-level control of two separate loads or complementary switching paths. Its low 1.0–2.5 V VGS(th) supports direct interfacing with 1.8 V/3.3 V logic, while 50 pF Ciss and 5.0 pF Crss minimize gate drive energy and reduce Miller-induced shoot-through risk.

The device operates across –55 °C to +150 °C, with 150 mW power dissipation derated linearly above 25 °C ambient per Fig. 1. Its SOT563 package uses matte tin-plated copper leadframe and meets J-STD-020 Level 1 moisture sensitivity, supporting standard reflow profiles without baking.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - supports 24 V industrial bus and 48 V PoE-powered systems without derating
ID (continuous)280 mA - sufficient for LED backlight dimming, sensor biasing, and low-power GPIO expansion
RDS(on)7.5 Ω @ VGS = 5 V - enables <150 mW conduction loss at 150 mA, critical for battery runtime
VGS(th)1.0–2.5 V - ensures turn-on with 1.8 V microcontroller I/O, eliminating level-shifter need
Ciss50 pF - reduces gate charge to ~0.5 nC, allowing 10 MHz switching with <10 mA driver
tD(ON)/tD(OFF)≤20 ns - supports PWM dimming >500 kHz and digital signal routing with minimal propagation skew
RθJA833 °C/W - requires PCB copper area ≥25 mm² for safe 150 mW operation at 70 °C ambient

Pinout & Package

SOT563 is a 6-pin ultra-small surface-mount package (2.2 × 1.35 × 0.6 mm) with dual-source/drain configuration and exposed thermal pad not connected internally. Pin 1 (G1) and Pin 6 (G2) are isolated gates; Pins 2/3 (D1/S1) and Pins 4/5 (D2/S2) form two independent channel pairs.

Pin/TerminalCircuit RoleDesign Meaning
G1Gate of Channel 1Controls first N-MOSFET; accepts 1.0–2.5 V threshold logic; must be actively driven low to ensure off-state
D1Drain of Channel 1High-side or low-side switch node; rated 60 V; connects to load or supply rail
S1Source of Channel 1Reference node for Channel 1; tied to ground in low-side config or to load in high-side config
S2Source of Channel 2Independent reference for Channel 2; electrically isolated from S1; enables dual-rail biasing
D2Drain of Channel 2Second switching node; identical 60 V/280 mA rating; supports redundant or mirrored load control
G2Gate of Channel 2Independent gate input; no internal coupling to G1; allows asynchronous or synchronized dual control

Key Features

FeatureDesign Value
Dual independent N-channel topologyEnables two separate switched loads (e.g., RGB LED anodes or dual sensor enable lines) without cross-talk or shared source constraints
Low 7.5 Ω RDS(on) @ 5 VReduces conduction loss by >40% vs. typical 12 Ω SOT-23 MOSFETs, extending coin-cell life in wearables
1.0–2.5 V gate thresholdGuarantees full enhancement with 1.8 V FPGA I/O banks and ARM Cortex-M0+ GPIO, eliminating external level shifters
50 pF input capacitanceLimits gate charge to 0.5 nC, enabling clean 10 MHz PWM edges using MCU GPIO without dedicated drivers
SOT563 ultra-small footprintOccupies 2.97 mm² board area-40% smaller than SOT-363-critical for TWS earbud PCB real estate

Applications

LED Backlight ControlIoT Sensor Power Gating

Use Scenario: Driving individual segments of a 3-color OLED display in smartwatch UI where each color channel requires independent on/off timing.

IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling red/green anode currents; each channel toggled independently via MCU PWM.

Use Value: 7.5 Ω RDS(on) limits voltage drop to <0.4 V at 50 mA, preserving display contrast; 20 ns switching avoids visible PWM ghosting.

Use Scenario: Enabling/disabling MEMS accelerometer and humidity sensor in BLE beacon during sleep/wake cycles to extend battery life.

IC Role / Device Role / Timing Role: Dual high-side switch isolating sensor VDD rails; one channel powers accelerometer, the other powers humidity IC.

Use Value: Sub-100 nA IDSS at 125 °C prevents >1 µA leakage during 30-day sleep mode, meeting 10 µA system budget.

USB-C Port Power SwitchingIndustrial Digital I/O Expansion

Use Scenario: Controlling VBUS delivery to downstream USB-C receptacles in multi-port docking station with overcurrent protection.

IC Role / Device Role / Timing Role: Dual low-side switch managing two independent USB-C ports; each channel monitors current via sense resistor before enabling.

Use Value: 60 V VDSS withstands 20 V USB PD transients; 280 mA rating matches USB-C 1.5 A profile without derating.

Use Scenario: Adding two programmable 24 V DC outputs to PLC I/O module for driving solenoid valves and indicator lamps.

IC Role / Device Role / Timing Role: Dual high-side switch interfaced with optocoupled MCU outputs; provides galvanically isolated 24 V switching capability.

Use Value: 833 °C/W RθJA allows 150 mW dissipation with 25 mm² copper pour, sustaining 200 mA per channel at 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2041LSD-13Single-channel SOT-26; 20 V VDSS, 4.5 Ω RDS(on) @ 4.5 V; higher current (650 mA)Not dual-channel; requires two devices for same function; better for higher-current single loadsSelect when needing >280 mA per channel or lower RDS(on) at 3.3 V drive, but accept larger footprint and extra component count
NTJD4152PZ-1Dual N-channel in SOT-363; 60 V VDSS, 10 Ω RDS(on) @ 4.5 V; 350 mA ID; 65 pF CissSame dual topology and voltage rating; larger 2.2 × 2.2 mm package; higher gate chargeSelect when SOT-363 is already in BOM and 10 Ω RDS(on) is acceptable; avoid if board space or 1.8 V logic drive is critical

Compared with DMN2041LSD-13 and NTJD4152PZ-1, the 2N7002VAC-7 uniquely balances dual-channel integration, 1.8 V logic compatibility, and 2.2 mm × 1.35 mm footprint-making it optimal for miniaturized, low-voltage, dual-load applications where gate drive simplicity and board area are primary constraints.

Availability

2N7002VAC-7 is available at Aetrix Electronics and suitable for LED backlight control, IoT sensor power gating, and USB-C port power switching requiring stable component supply, JEDEC-qualified reliability, and RoHS-compliant manufacturing.

Supply support for 2N7002VAC-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

The 2N7002VAC-7 belongs to Diodes' "Small Signal MOSFET" product line, engineered for compact, low-power switching in portable, automotive, and industrial control systems where gate drive efficiency and thermal performance in ultra-small packages are essential.

FAQ

Is the 2N7002VAC-7 pin-compatible with the 2N7002K or 2N7002E?

No. The 2N7002VAC-7 uses SOT563 (6-pin dual-channel) packaging, whereas 2N7002K and 2N7002E are single-channel SOT-23 devices with different pinouts (G-D-S). Interchange would require PCB redesign and violates isolation between channels. Always verify package outline and terminal mapping before substitution.

What is the maximum safe operating temperature for continuous 280 mA drain current?

At 280 mA and 7.5 Ω RDS(on), power dissipation is 590 mW-exceeding the 150 mW absolute maximum. Continuous 280 mA is only safe at VGS ≥ 10 V (RDS(on) ≤ 3.5 Ω) and with ≥25 mm² copper pour. Derate linearly above 25 °C ambient per the 833 °C/W RθJA curve; sustained operation above 70 °C ambient requires active cooling or current reduction.

Does the 2N7002VAC-7 support 1.8 V logic-level gate drive across its full temperature range?

Yes. With VGS(th) specified from 1.0 V to 2.5 V at 25 °C and guaranteed functional down to –55 °C, the device achieves full enhancement at 1.8 V across its entire –55 °C to +150 °C range. At 125 °C, RDS(on) increases to 13.5 Ω at 5 V, but remains fully enhanced at 1.8 V due to threshold stability per AEC-Q101 qualification.

Can the two channels be used in parallel to increase current handling?

No. The channels are electrically isolated with separate sources and drains; paralleling would cause current imbalance due to VGS(th) mismatch (±0.5 V typical) and thermal runaway. For higher current, use a single-channel MOSFET with appropriate RDS(on) and thermal design-never parallel the 2N7002VAC-7's internal channels.

2N7002VAC-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
280mA
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Power - Max:
150mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

2N7002VAC-7 FAQ

1.How can I place an order for 2N7002VAC-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002VAC-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002VAC-7 reliable?

The price and inventory of 2N7002VAC-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002VAC-7 is usually 5 days.

3.What payment methods are accepted for 2N7002VAC-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002VAC-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002VAC-7?

2N7002VAC-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002VAC-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002VAC-7?

For technical support, including 2N7002VAC-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002VAC-7 requirements.

6.How does Aetrix verify that 2N7002VAC-7 is sourced from the original manufacturer or authorized distributors?

All 2N7002VAC-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002VAC-7 meets industry standards.

7.What is the process for return or replacement of 2N7002VAC-7?

All 2N7002VAC-7 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002VAC-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002VAC-7 part is unused and in its original packaging.

Return procedure for 2N7002VAC-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N7002VAC-7 Tags

  • 2N7002VAC-7
  • 2N7002VAC-7 PDF
  • 2N7002VAC-7 Datasheet
  • 2N7002VAC-7 Specifications
  • 2N7002VAC-7 Images
  • Diodes Incorporated
  • Diodes Incorporated 2N7002VAC-7
  • Buy 2N7002VAC-7
  • 2N7002VAC-7 Price
  • 2N7002VAC-7 Distributor
  • 2N7002VAC-7 Supplier
  • 2N7002VAC-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER