Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated 2N7002VC-7

Part No.:
2N7002VC-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
Aetrix2N7002VC-7.pdf
Description:
MOSFET 2N-CH 60V 0.28A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:42,035

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N7002VC-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 60 V VDSS, 280 mA continuous drain current, and 7.5 Ω RDS(on) at VGS = 5 V. It delivers low gate threshold (1.0–2.5 V), fast switching (tD(ON)/tD(OFF) ≤ 20 ns), and ultra-low input capacitance (Ciss = 50 pF), enabling compact load switching in space-constrained portable power management circuits.

For engineers reviewing the 2N7002VC-7 datasheet, 2N7002VC-7 pinout, 2N7002VC-7 application, or 2N7002VC-7 equivalent, key selection criteria include verified dual-channel isolation, JEDEC-qualified reliability for industrial ambient operation (−55°C to +150°C), low-leakage performance (IDSS ≤ 1.0 µA at 25°C), and RoHS-compliant lead-free construction with matte tin terminations.

Technical Context

This dual MOSFET integrates two independent N-channel silicon devices on a single die with fully isolated source/drain/gate terminals per channel. Each channel operates with enhancement-mode logic, requiring positive VGS above threshold to conduct, and supports bidirectional blocking up to 60 V with guaranteed breakdown margin (BVDSS ≥ 60 V).

Thermal design is constrained by its 150 mW total power dissipation and 833°C/W junction-to-ambient resistance on FR-4 PCBs using Diodes Inc.'s AP02001 pad layout. The device exhibits low dynamic losses due to Ciss = 50 pF, Coss = 25 pF, and Crss = 5.0 pF at VDS = 25 V, enabling efficient high-frequency switching in DC-DC converter control paths.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Maximum drain-source blocking voltage before avalanche conduction begins
ID (continuous)280 mA - Steady-state current per channel without thermal derating at 25°C ambient
RDS(on)7.5 Ω @ VGS = 5 V - On-resistance determining conduction loss in low-side switch applications
VGS(th)1.0–2.5 V - Gate voltage range where channel begins conducting; enables 3.3 V logic-level drive
Ciss50 pF - Input capacitance defining gate drive energy requirement and switching speed limit
tD(ON)/tD(OFF)≤ 20 ns - Turn-on/turn-off delay times measured under standardized 30 V/0.2 A resistive load conditions
TJ range−55°C to +150°C - Operational junction temperature span validated per JEDEC standards for industrial reliability

Pinout & Package

SOT563 is a 6-pin ultra-small surface-mount package (2.2 × 1.35 × 0.6 mm) with exposed thermal pad not connected internally; terminals are matte tin annealed over copper leadframe, solderable per MIL-STD-202 Method 208.

Pin/TerminalCircuit RoleDesign Meaning
G1Gate of Channel 1Independent control terminal for first N-MOSFET; requires no pull-down resistor if driven actively
S1Source of Channel 1Reference node for Channel 1; electrically isolated from S2 and all other pins
D1Drain of Channel 1High-side or low-side current path for Channel 1; rated for 60 V reverse blocking
G2Gate of Channel 2Independent control terminal for second N-MOSFET; no internal coupling to G1
S2Source of Channel 2Reference node for Channel 2; galvanically isolated from S1 and substrate
D2Drain of Channel 2Current path for Channel 2; supports simultaneous or asynchronous switching with Channel 1

Key Features

FeatureDesign Value
Dual isolated N-channel topologyEnables independent control of two loads without shared source/drain nodes, reducing board area vs. discrete singles
Low 1.0–2.5 V VGS(th)Guarantees full enhancement with 3.3 V microcontroller GPIO, eliminating level-shifter requirements
7.5 Ω RDS(on) @ 5 VDelivers <1.5 mW conduction loss at 280 mA, critical for battery-powered load switching efficiency
50 pF CissReduces gate drive current demand and propagation delay in high-frequency PWM control loops
JEDEC-qualified reliabilityValidated per AEC-Q101 stress test protocols, supporting extended lifetime in unregulated industrial environments

Applications

USB Port Power SwitchingLED Backlight Dimming Control

Use Scenario: Selectively enabling/disabling 5 V power to USB peripherals in embedded host controllers.

IC Role / Device Role / Timing Role: Dual low-side switch routing VBUS to two independent downstream ports with independent enable signals.

Use Value: Eliminates need for two separate SOT23-3 MOSFETs; 280 mA rating supports USB 2.0 enumeration current while maintaining <100 mV drop at full load.

Use Scenario: PWM-controlled current regulation for white LED strings in automotive instrument clusters.

IC Role / Device Role / Timing Role: Two-channel constant-current sink driver, each channel modulating one LED string via gate-driven duty cycle.

Use Value: Low 5.0 pF Crss minimizes capacitive feedthrough during fast PWM edges, preserving dimming linearity and reducing EMI.

IoT Sensor Node Power GatingIndustrial I/O Module Protection

Use Scenario: Shutting down non-critical sensors (e.g., humidity, ambient light) during deep-sleep cycles in battery-operated edge nodes.

IC Role / Device Role / Timing Role: Dual load switch isolating sensor supply rails, controlled by MCU GPIOs with minimal quiescent current draw.

Use Value: Ultra-low IDSS (≤1.0 µA at 25°C) ensures <0.3 µA total leakage per channel, extending multi-year battery life.

Use Scenario: Protecting programmable logic controller (PLC) digital input channels from field-wiring transients and reverse polarity.

IC Role / Device Role / Timing Role: Dual-channel reverse-polarity protection switch placed upstream of optocoupler inputs.

Use Value: 60 V VDSS withstands induced surges up to ±40 V; low RDS(on) adds <100 mV insertion loss at 200 mA nominal input current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2041LSD-13Single-channel SOT23-6; 20 V VDSS, 4.5 Ω RDS(on) @ 4.5 VLimited to lower-voltage systems (<24 V); lacks dual-channel integrationSelect when higher RDS(on) tolerance permits and board space allows discrete placement
NTJD4152PT1GDual N-channel SOT363; 60 V VDSS, 10 Ω RDS(on) @ 4.5 V, Ciss = 65 pFHigher input capacitance increases gate drive burden; same voltage rating but larger footprintPrefer when existing SOT363 layout reuse is required and 15% higher switching loss is acceptable

Compared with DMN2041LSD-13 and NTJD4152PT1G, the 2N7002VC-7 uniquely combines 60 V rating, dual-channel isolation, and 50 pF Ciss in the smallest SOT563 footprint-enabling higher-density power routing without sacrificing surge immunity or drive efficiency.

Availability

2N7002VC-7 is available at Aetrix Electronics and suitable for USB power switching, LED backlight control, IoT sensor power gating, and industrial I/O protection requiring stable component supply across production lifecycles.

Supply support for 2N7002VC-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The 2N7002VC series belongs to Diodes' high-reliability small-signal MOSFET product line, engineered specifically for space-constrained, low-power load switching in consumer, computing, and industrial applications where dual-channel integration and JEDEC-qualified robustness are essential.

FAQ

Is the 2N7002VC-7 suitable for automotive applications?

No-the 2N7002VC-7 is an industrial-grade part qualified to JEDEC standards but not AEC-Q101. For automotive use, Diodes offers the Q-suffix variant (e.g., 2N7002QVC-7), which undergoes PPAP, operates across −40°C to +125°C, and is manufactured in IATF 16949-certified facilities.

What is the maximum safe operating temperature for continuous use?

The 2N7002VC-7 supports continuous operation up to +150°C junction temperature. At 25°C ambient, its 150 mW power dissipation derates linearly above +25°C per the 833°C/W RθJA; full-rated current is only sustainable below +75°C ambient on standard FR-4 layouts.

Can both channels be used in parallel to increase current capacity?

No-channels are electrically isolated with no internal connection between sources or drains. Parallel use would require external wiring that introduces mismatched thermal resistance and gate drive skew, risking current imbalance and premature failure; the device is not characterized for paralleling.

Does the SOT563 package include a thermal pad for heatsinking?

No-the SOT563 outline shows no exposed thermal pad in the mechanical drawing. Thermal performance relies entirely on copper traces connected to S1/S2/D1/D2 pads per Diodes' AP02001 recommended layout; no additional thermal vias or paddle attachment is supported.

2N7002VC-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
280mA
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Power - Max:
150mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

2N7002VC-7 FAQ

1.How can I place an order for 2N7002VC-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002VC-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002VC-7 reliable?

The price and inventory of 2N7002VC-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002VC-7 is usually 5 days.

3.What payment methods are accepted for 2N7002VC-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002VC-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002VC-7?

2N7002VC-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002VC-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002VC-7?

For technical support, including 2N7002VC-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002VC-7 requirements.

6.How does Aetrix verify that 2N7002VC-7 is sourced from the original manufacturer or authorized distributors?

All 2N7002VC-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002VC-7 meets industry standards.

7.What is the process for return or replacement of 2N7002VC-7?

All 2N7002VC-7 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002VC-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002VC-7 part is unused and in its original packaging.

Return procedure for 2N7002VC-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N7002VC-7 Tags

  • 2N7002VC-7
  • 2N7002VC-7 PDF
  • 2N7002VC-7 Datasheet
  • 2N7002VC-7 Specifications
  • 2N7002VC-7 Images
  • Diodes Incorporated
  • Diodes Incorporated 2N7002VC-7
  • Buy 2N7002VC-7
  • 2N7002VC-7 Price
  • 2N7002VC-7 Distributor
  • 2N7002VC-7 Supplier
  • 2N7002VC-7 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER