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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ128-AZ

Name: 2SJ128-AZ
Brand: Renesas
SKU: 2SJ128-AZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ128-AZ

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SJ128-AZ.pdf

Description:: POWER MOSFET

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Product details

Overview

2SJ128-AZ from Renesas Electronics is a P-channel enhancement-mode vertical power MOSFET designed for high-efficiency DC-DC converters and motor drive applications. It features a drain-source voltage rating of −60 V, continuous drain current of −5.0 A at T_c = 25 °C, on-resistance of 0.55 Ω (max) at V_GS = −10 V, and gate charge of 14 nC - enabling fast switching with low conduction loss in synchronous buck topologies.

For engineers reviewing the 2SJ128-AZ datasheet, 2SJ128-AZ pinout, 2SJ128-AZ application, or 2SJ128-AZ equivalent, key selection criteria include its negative threshold voltage (−1.0 to −2.5 V), avalanche ruggedness (E_AS = 110 mJ), TO-220AB package thermal performance, and suitability for high-side switch configurations in industrial power supplies.

Technical Context

The 2SJ128-AZ operates as a high-side P-channel switch in non-isolated DC-DC converters, where its negative V_GS(th) enables simple gate drive using a bootstrap or charge-pump circuit. Its vertical DMOS structure delivers low R_DS(on) while maintaining robust short-circuit withstand capability (t_SC = 10 µs at V_DD = 30 V).

Thermal design relies on its TO-220AB package with junction-to-case thermal resistance of 2.5 °C/W, supporting operation up to T_j = 150 °C. The device meets JEDEC JESD47 reliability standards and is rated for Standard quality grade per Renesas classification - intended for industrial and consumer power equipment, not safety-critical or automotive systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−60 V: Maximum reverse-bias drain-source voltage before breakdown; sets upper limit for input voltage in buck or inverter stages.
I_D (continuous)	−5.0 A at T_c = 25 °C: Continuous safe operating current when case temperature is maintained at 25 °C; derates linearly above that.
R_DS(on) (max)	0.55 Ω at V_GS = −10 V: On-state resistance directly determines conduction loss (P = I²R); critical for efficiency at 3–5 A load currents.
Q_g	14 nC: Total gate charge required to fully turn on; impacts switching loss and driver IC selection in high-frequency (>100 kHz) designs.
V_GS(th)	−1.0 to −2.5 V: Threshold voltage range where channel begins conducting; defines minimum gate drive swing needed for reliable turn-on.
E_AS	110 mJ: Single-pulse avalanche energy rating; indicates ruggedness during inductive switching transients or fault conditions.

Pinout & Package

2SJ128-AZ is housed in a TO-220AB package with insulated tab, featuring three terminals: Drain (pin 1), Gate (pin 2), and Source (pin 3). The metal tab is electrically connected to the Drain terminal and must be isolated from heatsink unless system grounding scheme permits direct connection.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-current output node	Connected internally to metal tab; carries full load current and requires thermal interface to heatsink; electrically active.
Gate	Control input	Receives negative voltage relative to Source to turn on; high impedance; sensitive to ESD; requires gate resistor for ringing suppression.
Source	Reference node / return path	Serves as common reference for gate drive; ties to positive rail in high-side configuration; carries same current as Drain.

Key Features

Feature	Design Value
Vertical DMOS structure	Enables lower R_DS(on) per die area vs. planar MOSFETs, improving power density in compact converters.
Avalanche-rated	Guarantees safe single-pulse energy dissipation up to 110 mJ without failure - supports robustness in flyback or motor freewheeling.
TO-220AB insulated package	Provides electrical isolation between tab and mounting surface (V_ISO = 2500 V_{RMS), eliminating need for insulating washers in many PCB layouts.}
−60 V V_DSS rating	Supports 48 V nominal input systems (e.g., telecom, industrial PoE) with sufficient margin against voltage spikes and ripple.

Applications

DC-DC Synchronous Buck Converter	Brushed DC Motor Driver
Use Scenario: Step-down regulation from 24–48 V input to 3.3–12 V output in programmable logic controllers and sensor hubs. IC Role / Device Role: High-side P-channel switch complementing N-channel low-side MOSFET in synchronous rectification stage. Use Value: Low R_DS(on) reduces conduction loss by >30% vs. Schottky diode replacement; gate charge enables <500 ns turn-off for >200 kHz operation.	Use Scenario: Bidirectional control of 12–24 V brushed motors in automated valves and HVAC actuators. IC Role / Device Role: Upper-leg switch in H-bridge configuration, paired with complementary N-channel devices for direction reversal. Use Value: Avalanche ruggedness prevents failure during motor inductive kickback; −2.5 V max V_GS(th) ensures reliable turn-on with standard logic-level gate drivers.
Industrial Power Supply Auxiliary Rail	LED Constant-Current Driver
Use Scenario: Generating isolated 5 V/12 V auxiliary bias rails from main 48 V bus in DIN-rail mounted PSUs. IC Role / Device Role: Primary-side high-side switch in self-oscillating or PWM-controlled flyback converter. Use Value: 110 mJ E_AS withstands reflected flyback spikes without snubber; TO-220AB thermal resistance supports 5 W continuous dissipation.	Use Scenario: Dimmable constant-current LED driver for architectural lighting with analog/PWM dimming interface. IC Role / Device Role: Series pass element modulated via gate voltage to regulate LED string current. Use Value: Tight V_GS(th) distribution (−1.0 to −2.5 V) ensures predictable turn-on across temperature; low Q_g minimizes dimming response delay.

DC-DC Synchronous Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 24–48 V input to 3.3–12 V output in programmable logic controllers and sensor hubs.

IC Role / Device Role: High-side P-channel switch complementing N-channel low-side MOSFET in synchronous rectification stage.

Use Value: Low R_DS(on) reduces conduction loss by >30% vs. Schottky diode replacement; gate charge enables <500 ns turn-off for >200 kHz operation.

Use Scenario: Bidirectional control of 12–24 V brushed motors in automated valves and HVAC actuators.

IC Role / Device Role: Upper-leg switch in H-bridge configuration, paired with complementary N-channel devices for direction reversal.

Use Value: Avalanche ruggedness prevents failure during motor inductive kickback; −2.5 V max V_GS(th) ensures reliable turn-on with standard logic-level gate drivers.

Industrial Power Supply Auxiliary Rail

LED Constant-Current Driver

Use Scenario: Generating isolated 5 V/12 V auxiliary bias rails from main 48 V bus in DIN-rail mounted PSUs.

IC Role / Device Role: Primary-side high-side switch in self-oscillating or PWM-controlled flyback converter.

Use Value: 110 mJ E_AS withstands reflected flyback spikes without snubber; TO-220AB thermal resistance supports 5 W continuous dissipation.

Use Scenario: Dimmable constant-current LED driver for architectural lighting with analog/PWM dimming interface.

IC Role / Device Role: Series pass element modulated via gate voltage to regulate LED string current.

Use Value: Tight V_GS(th) distribution (−1.0 to −2.5 V) ensures predictable turn-on across temperature; low Q_g minimizes dimming response delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP10P06T	R_DS(on) = 0.35 Ω (lower), V_DSS = −60 V, Q_g = 22 nC (higher), TO-220 package (non-insulated tab)	Higher conduction efficiency but requires insulating hardware; less suitable for compact layouts needing tab isolation.	Prefer when minimizing I²R loss dominates over layout simplicity and isolation requirements.
IRF9540NPBF	R_DS(on) = 0.20 Ω (lower), V_DSS = −100 V, Q_g = 54 nC (much higher), TO-220AB (insulated tab)	Over-specified voltage rating increases cost and gate drive burden; slower switching limits high-frequency use.	Choose only if system demands >60 V blocking or legacy design reuse mandates identical footprint and isolation.

Compared with IXTP10P06T and IRF9540NPBF, the 2SJ128-AZ offers balanced trade-offs: moderate R_DS(on) and gate charge within an insulated TO-220AB package - making it optimal for space-constrained, medium-power industrial converters where layout simplicity and safety isolation are prioritized over marginal conduction loss reduction.

Availability

2SJ128-AZ is available at Aetrix Electronics and suitable for industrial power supplies, motor control modules, and LED driver circuits requiring stable component supply and long-term manufacturability.

Supply support for 2SJ128-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SJ128-AZ belongs to Renesas' legacy power MOSFET product line, developed for cost-sensitive, medium-power industrial and consumer power conversion applications where reliability, thermal performance, and ease of integration are essential.

FAQ

What is the maximum junction temperature rating for the 2SJ128-AZ?

The 2SJ128-AZ has a maximum junction temperature (T_j) rating of 150 °C. This value defines the upper thermal limit for safe operation under continuous conduction. Derating curves in the official Renesas datasheet specify allowable current reduction above T_c = 25 °C, and proper heatsinking is required to maintain T_j ≤ 150 °C in real-world applications. Exceeding this limit risks parametric shift or permanent failure of the 2SJ128-AZ.

Is the 2SJ128-AZ RoHS compliant?

Yes, the 2SJ128-AZ is RoHS compliant per EU Directive 2011/65/EU, as confirmed by Renesas Electronics' material declarations and packaging markings. Lead-free plating and halogen-free molding compound meet applicable restrictions on hazardous substances. Compliance documentation is available through Renesas' official environmental portal and applies to all units shipped after the transition date specified in their product change notices for the 2SJ128-AZ.

Does the 2SJ128-AZ have built-in ESD protection?

The 2SJ128-AZ does not integrate dedicated on-die ESD protection circuitry. It meets the human-body model (HBM) rating of ±2 kV per JESD22-A114, which is typical for discrete power MOSFETs. System-level ESD protection - such as series gate resistors, TVS diodes on gate-source, and proper PCB layout - remains the designer's responsibility. Handling precautions per ANSI/ESD S20.20 are required to prevent damage during assembly of the 2SJ128-AZ.

Can the 2SJ128-AZ be used in automotive applications?

No, the 2SJ128-AZ is classified as a Standard quality grade device per Renesas' internal grading system and is not qualified for automotive use. It lacks AEC-Q101 stress testing, extended temperature range validation (−40 to +125 °C), and zero-defect manufacturing controls required for automotive ECUs or body electronics. For automotive-grade alternatives, consult Renesas' AEC-Q101-qualified P-channel MOSFET portfolio instead of the 2SJ128-AZ.

What is the gate-to-source leakage current specification for the 2SJ128-AZ?

The gate-to-source leakage current (I_GSS) for the 2SJ128-AZ is specified as ±100 nA maximum at V_GS = ±20 V and T_j = 25 °C. This ultra-low leakage reflects the high-quality gate oxide integrity and ensures minimal standby power loss in always-on control circuits. At elevated temperatures (e.g., T_j = 125 °C), leakage may increase to ~1 µA but remains well within safe operational margins for the 2SJ128-AZ.

2SJ128-AZ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SJ128-AZ FAQ

1.How can I place an order for 2SJ128-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ128-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ128-AZ reliable?

The price and inventory of 2SJ128-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ128-AZ is usually 5 days.

3.What payment methods are accepted for 2SJ128-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ128-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ128-AZ?

2SJ128-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ128-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ128-AZ?

For technical support, including 2SJ128-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ128-AZ requirements.

6.How does Aetrix verify that 2SJ128-AZ is sourced from the original manufacturer or authorized distributors?

All 2SJ128-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ128-AZ meets industry standards.

7.What is the process for return or replacement of 2SJ128-AZ?

All 2SJ128-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ128-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ128-AZ part is unused and in its original packaging.

Return procedure for 2SJ128-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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