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Renesas 2SJ133-Z-E1-AZ
- Part No.:
- 2SJ133-Z-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SJ133-Z-E1-AZ.pdf
- Description:
- POWER FIELD-EFFECT TRANSISTOR
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
2SJ133-Z-E1-AZ from Renesas Electronics is a P-channel enhancement-mode power MOSFET designed for DC-DC converter switching, motor drive control, and load switching applications. It features a −60 V drain-source breakdown voltage, 2.0 A continuous drain current (TC = 25°C), logic-level gate drive capability at VGS = −4 V, and low RDS(on) of 0.45 Ω (typ.) at VGS = −10 V. Its TO-252 (MP-3Z) surface-mount package supports high-current operation with thermal efficiency in compact PCB layouts.
For engineers reviewing the 2SJ133-Z-E1-AZ datasheet, 2SJ133-Z-E1-AZ pinout, 2SJ133-Z-E1-AZ application, or 2SJ133-Z-E1-AZ equivalent, key selection criteria include verified logic-level gate compatibility, RDS(on) performance at −4 V bias, pulse current handling up to −8.0 A, thermal derating behavior on ceramic vs. PCB mounting, and suitability for industrial-grade switching circuits requiring stable parametric consistency across temperature.
Technical Context
This device operates as a single N-channel depletion-mode structure is not applicable - it is a P-channel enhancement-mode MOSFET with built-in body diode. Its gate threshold voltage range (−1.0 to −3.0 V) ensures reliable turn-on under standard logic-level drive, while its output capacitance (Coss = 250 pF) and reverse transfer capacitance (Crss = 50 pF) support moderate-frequency switching up to ~100 kHz in hard-switched topologies.
The 2SJ133-Z-E1-AZ uses a planar vertical DMOS structure optimized for low conduction loss and fast switching transitions: td(on) = 30 ns, tr = 30 ns, td(off) = 110 ns, tf = 40 ns under specified resistive-load test conditions (VDD ≅ −30 V, RL = 30 Ω, Rin = 10 Ω). Its channel temperature limit of 150°C and storage range of −55°C to +150°C align with industrial ambient requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −60 V - maximum blocking voltage before avalanche; defines safe operating range in buck/boost converters and high-side switches |
| RDS(on)1 | 0.45 Ω (typ.) at VGS = −10 V, ID = −1.0 A - enables <1 W conduction loss at 1 A, critical for thermally constrained PCBs |
| RDS(on)2 | 0.7 Ω (typ.) at VGS = −4 V, ID = −0.8 A - confirms usable on-resistance under 3.3 V logic drive without level-shifting |
| ID(pulse) | −8.0 A (PW ≤ 300 μs, duty ≤ 10%) - supports short-circuit protection and motor stall current handling |
| Ciss / Coss | 660 pF / 250 pF - determines gate drive strength requirement and impacts EMI in switching nodes |
| PT1 | 20 W at TC = 25°C - specifies heatsink-dependent power handling; requires thermal pad soldering for full rating |
| VGS(off) | −1.0 to −3.0 V - defines gate voltage window for guaranteed turn-off; avoids unintended conduction near 0 V |
Pinout & Package
2SJ133-Z-E1-AZ is housed in a TO-252 (MP-3Z) surface-mount package with exposed drain tab for thermal and electrical connection. The package measures 6.5 mm × 5.0 mm × 2.3 mm and features gull-wing leads compatible with standard reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate (G) | Control electrode | Receives negative gate-source voltage to turn on; requires <100 nA leakage current compliance |
| 2: Drain (D) | High-side current path | Connected to exposed metal tab; must be electrically tied to PCB ground plane or heatsink for thermal management |
| 3: Source (S) | Reference node | Serves as return path for load current; establishes VGS reference for gate drive circuitry |
| 4: Fin (Drain) | Thermal & electrical extension | Integral part of drain terminal; provides mechanical stability and enhanced heat dissipation via soldered copper area |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = −4 V - eliminates need for gate driver ICs in 3.3 V microcontroller-based systems |
| Low RDS(on) at low VGS | 0.7 Ω typ. at −4 V bias - reduces conduction loss by >30% versus comparable MOSFETs lacking logic-level optimization |
| TO-252 hybrid IC compatibility | Lead process compliant and fin-notched design - enables direct integration into hybrid power modules with minimal layout adaptation |
| Built-in body diode | Integrated source-drain diode with 250 pF Coss - supports freewheeling in synchronous rectifier and H-bridge configurations |
Applications
| DC-DC Converter High-Side Switch | Brushed DC Motor Driver |
|---|---|
Use Scenario: Used as high-side switch in non-synchronous buck regulators powering industrial sensors and PLC I/O modules. IC Role / Device Role / Timing Role: P-channel MOSFET providing controlled power delivery during ON-state; body diode handles freewheeling during OFF-state. Use Value: Low RDS(on) minimizes voltage drop and heat generation at 1–2 A loads; logic-level drive simplifies MCU GPIO interface without external level shifters. | Use Scenario: Controls direction and enable state of 12 V brushed DC motors in automated valve actuators and HVAC dampers. IC Role / Device Role / Timing Role: Load switch in half-H-bridge configuration; paired with N-channel counterpart for bidirectional control. Use Value: −60 V rating accommodates back-EMF spikes up to 40 V; 8 A pulse rating sustains stall currents during startup or jam conditions. |
| Industrial Load Switch | Power Supply OR-ing Circuit |
Use Scenario: Enables/disables 24 V auxiliary rails in programmable logic controllers and industrial HMIs. IC Role / Device Role / Timing Role: Single-pole, single-throw electronic switch replacing mechanical relays for improved reliability and lifetime. Use Value: 2.0 A continuous rating supports typical 24 V/1 A loads; TO-252 footprint allows dense board layout with minimal thermal vias required. | Use Scenario: Implements redundant 12 V input OR-ing in telecom power distribution units with dual PSUs. IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch ensuring only active supply powers downstream circuitry. Use Value: Body diode orientation prevents backfeed; −60 V VDSS provides margin against transient coupling between inputs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPbF | RDS(on) = 0.2 Ω @ −10 V (lower), but requires −10 V for full enhancement; VGS(th) = −2 to −4 V | Higher gate drive demand; less suitable for 3.3 V logic; better for 5 V or dedicated gate drivers | Select when lower conduction loss justifies added gate drive complexity and higher cost |
| Si2305DS-T1-E3 | Small SOT-23 package; RDS(on) = 0.05 Ω @ −4.5 V; ID(DC) = 4.1 A (at TC = 25°C); lower voltage rating (−30 V) | Limited to low-voltage, space-constrained applications; unsuitable for 48 V or higher bus systems | Choose for portable equipment or battery-powered devices where size and 3.3 V compatibility outweigh voltage headroom needs |
Compared with IRF9540NPbF and Si2305DS-T1-E3, the 2SJ133-Z-E1-AZ uniquely balances −60 V rating, verified −4 V logic-level operation, and TO-252 thermal performance - making it optimal for industrial 24–48 V switching where gate simplicity and ruggedness are prioritized over ultra-low RDS(on) or miniaturization.
Availability
2SJ133-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter design, and programmable logic controller (PLC) power management requiring stable component supply and long-term manufacturing continuity.
Supply support for 2SJ133-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and connectivity solutions.
The 2SJ133-Z-E1-AZ belongs to Renesas' legacy power MOSFET product line targeting industrial switching applications - engineered for reliability in factory automation, building control, and power conversion systems operating within Standard quality grade specifications.
FAQ
What is the maximum continuous drain current rating for the 2SJ133-Z-E1-AZ?
The 2SJ133-Z-E1-AZ has a maximum continuous drain current ID(DC) of −2.0 A at case temperature TC = 25°C. This rating assumes proper thermal management using the TO-252 package's exposed drain tab. At higher temperatures, the current must be derated per the datasheet's thermal resistance curve. The 2SJ133-Z-E1-AZ also supports −8.0 A pulsed current for short durations (≤300 μs, ≤10% duty cycle), enabling robust transient handling in motor and relay drive applications.
Does the 2SJ133-Z-E1-AZ support logic-level gate drive?
Yes, the 2SJ133-Z-E1-AZ is explicitly characterized for logic-level operation: RDS(on)2 = 0.7 Ω (typ.) at VGS = −4 V and ID = −0.8 A. Its gate threshold voltage VGS(off) ranges from −1.0 V to −3.0 V, ensuring full enhancement with common 3.3 V microcontroller outputs (when referenced to source). This eliminates the need for external level shifters or dedicated gate drivers in many industrial control designs using the 2SJ133-Z-E1-AZ.
What package type does the 2SJ133-Z-E1-AZ use, and how is thermal performance affected by mounting?
The 2SJ133-Z-E1-AZ uses the TO-252 (MP-3Z) surface-mount package with an exposed drain fin. Thermal performance depends critically on mounting: PT1 = 20 W is rated only at TC = 25°C with adequate heatsinking, while PT2 = 1.0 W applies to standard PCB mounting and 2.0 W to a 7.5 cm² × 0.7 mm ceramic board. Proper soldering of the drain tab to a large copper pour or thermal pad is essential to achieve the full 20 W rating and prevent thermal runaway in the 2SJ133-Z-E1-AZ.
Can the 2SJ133-Z-E1-AZ be used in place of the older 2SJ133 without design changes?
Yes - the 2SJ133-Z-E1-AZ is a direct replacement for the original 2SJ133, sharing identical electrical specifications, pinout, and TO-252 package. The "-Z" suffix denotes lead-free processing and enhanced hybrid IC compatibility, while "-E1-AZ" indicates tape-and-reel packaging and RoHS compliance. No PCB layout or schematic modifications are needed when upgrading from 2SJ133 to 2SJ133-Z-E1-AZ, and the 2SJ133-Z-E1-AZ maintains full functional and thermal equivalence.
What is the quality grade classification of the 2SJ133-Z-E1-AZ according to Renesas standards?
The 2SJ133-Z-E1-AZ is classified as a "Standard" quality grade device per Renesas Electronics documentation, meaning it is qualified for use in computers, office equipment, communications gear, industrial robots, machine tools, and home appliances. It is not approved for "High Quality" applications (e.g., automotive or medical non-life-support) or "Specific" applications (e.g., aerospace or life-support systems) unless explicitly authorized. This classification applies to the 2SJ133-Z-E1-AZ as shipped and documented in Renesas data sheet D16193EJ4V0DS00.
2SJ133-Z-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SJ133-Z-E1-AZ FAQ
1.How can I place an order for 2SJ133-Z-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ133-Z-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ133-Z-E1-AZ reliable?
The price and inventory of 2SJ133-Z-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ133-Z-E1-AZ is usually 5 days.
3.What payment methods are accepted for 2SJ133-Z-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ133-Z-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ133-Z-E1-AZ?
2SJ133-Z-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ133-Z-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ133-Z-E1-AZ?
For technical support, including 2SJ133-Z-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ133-Z-E1-AZ requirements.
6.How does Aetrix verify that 2SJ133-Z-E1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SJ133-Z-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ133-Z-E1-AZ meets industry standards.
7.What is the process for return or replacement of 2SJ133-Z-E1-AZ?
All 2SJ133-Z-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ133-Z-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ133-Z-E1-AZ part is unused and in its original packaging.
Return procedure for 2SJ133-Z-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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