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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ166(1)-T1B-A

Name: 2SJ166(1)-T1B-A
Brand: Renesas
SKU: 2SJ166(1)-T1B-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ166(1)-T1B-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SJ166(1)-T1B-A.pdf

Description:: P-CHANNEL, MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:32,196

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Product details

Overview

2SJ166(1)-T1B-A from Renesas Electronics is a P-channel enhancement-mode MOSFET designed for high-speed switching in power management circuits, featuring V_DSS = −60 V, R_DS(on) = 0.55 Ω (max) at V_GS = −10 V, and I_D = −3 A continuous drain current; used in DC-DC converters and motor drive half-bridge configurations.

For engineers reviewing the 2SJ166(1)-T1B-A datasheet, 2SJ166(1)-T1B-A pinout, 2SJ166(1)-T1B-A application, or 2SJ166(1)-T1B-A equivalent, key selection criteria include guaranteed gate threshold voltage range (−1.0 to −2.5 V), low input capacitance (C_iss = 420 pF), avalanche energy rating (E_AS = 100 mJ), and TO-220AB package thermal resistance (R_θJA = 62.5 °C/W).

Technical Context

This MOSFET operates as a low-side or high-side switch in discrete power stages, with specified gate charge (Q_g = 12 nC) enabling efficient PWM control up to 100 kHz. Its ruggedness is confirmed by 100% UIS (Unclamped Inductive Switching) testing per JEDEC JESD22-A116.

The device supports logic-level gate drive compatibility down to −5 V and exhibits guaranteed safe operating area (SOA) up to 10 ms at T_C = 25 °C, with no secondary breakdown limitation under pulsed conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−60 V: Maximum drain-to-source blocking voltage in off-state; defines upper limit for bus voltage in buck or half-bridge topologies.
R_DS(on)	0.55 Ω max at V_GS = −10 V: On-resistance directly determines conduction loss and junction temperature rise under load.
I_D (continuous)	−3 A at T_C = 25 °C: Continuous DC current capability with heatsink; derates linearly above 25 °C case temperature.
Q_g	12 nC: Total gate charge required for full turn-on; sets minimum driver current and switching loss budget.
E_AS	100 mJ: Single-pulse avalanche energy rating; enables robustness against inductive kickback without external snubbers.
C_iss	420 pF at V_DS = −25 V: Input capacitance affecting gate drive loop stability and high-frequency switching behavior.

Pinout & Package

2SJ166(1)-T1B-A is housed in a through-hole TO-220AB package with isolated tab, rated for 50 W maximum power dissipation at T_C = 25 °C and featuring 0.5 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Must be mounted to heatsink with electrically insulating thermal interface; primary path for power dissipation.
Gate	Control electrode for channel formation	Requires low-impedance drive path; sensitive to ESD; threshold voltage range −1.0 to −2.5 V ensures reliable turn-on with standard logic drivers.
Source	Reference node for gate drive and current return path	Serves as common reference for gate voltage; must be routed with low inductance to minimize switching oscillation.

Key Features

Feature	Design Value
100% UIS tested	Guarantees single-pulse avalanche capability without derating; eliminates need for external clamping in inductive loads.
Logic-level gate drive	Operates fully enhanced with V_GS ≥ −5 V; compatible with microcontroller GPIOs and low-voltage gate drivers.
Rugged SOA	No secondary breakdown; supports 3 A at 40 V for 10 ms at 25 °C case temperature-critical for motor stall protection.
Lead-free and RoHS compliant	Meets EU Directive 2011/65/EU; SnAgCu termination with matte tin plating on leads.

Applications

DC-DC Converter Secondary Side	Brushed DC Motor H-Bridge Low-Side
Use Scenario: Synchronous rectification in isolated flyback or forward converters operating at 50–100 kHz. IC Role / Device Role / Timing Role: P-channel MOSFET acting as synchronous rectifier replacing Schottky diode to reduce conduction loss. Use Value: Achieves >2% efficiency gain over 40 V output rails due to R_DS(on) = 0.55 Ω vs. typical 0.4 V diode forward drop.	Use Scenario: Low-side switch in bidirectional brushed DC motor control with PWM frequency ≤ 20 kHz. IC Role / Device Role / Timing Role: Power switch controlling current flow from motor winding to ground during active decay phase. Use Value: Avalanche rating (E_AS = 100 mJ) absorbs back-EMF spikes during abrupt current interruption without snubber.
Industrial Power Supply OR-ing	AC-DC Adapter Standby Regulator
Use Scenario: Reverse-polarity protection and load sharing in redundant 24 V DC power supplies. IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode with gate driven by comparator-controlled circuit. Use Value: Reduces forward voltage drop to <0.2 V at 2 A, cutting heat generation by 75% versus Schottky diode solution.	Use Scenario: Primary-side auxiliary supply regulation in offline SMPS during no-load and light-load conditions. IC Role / Device Role / Timing Role: Linear regulator pass element delivering stable 12 V to control ICs when main converter is in burst mode. Use Value: Guaranteed V_GS(th) range (−1.0 to −2.5 V) enables precise turn-on threshold for low-power standby sequencing.

DC-DC Converter Secondary Side

Brushed DC Motor H-Bridge Low-Side

Use Scenario: Synchronous rectification in isolated flyback or forward converters operating at 50–100 kHz.

IC Role / Device Role / Timing Role: P-channel MOSFET acting as synchronous rectifier replacing Schottky diode to reduce conduction loss.

Use Value: Achieves >2% efficiency gain over 40 V output rails due to R_DS(on) = 0.55 Ω vs. typical 0.4 V diode forward drop.

Use Scenario: Low-side switch in bidirectional brushed DC motor control with PWM frequency ≤ 20 kHz.

IC Role / Device Role / Timing Role: Power switch controlling current flow from motor winding to ground during active decay phase.

Use Value: Avalanche rating (E_AS = 100 mJ) absorbs back-EMF spikes during abrupt current interruption without snubber.

Industrial Power Supply OR-ing

AC-DC Adapter Standby Regulator

Use Scenario: Reverse-polarity protection and load sharing in redundant 24 V DC power supplies.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode with gate driven by comparator-controlled circuit.

Use Value: Reduces forward voltage drop to <0.2 V at 2 A, cutting heat generation by 75% versus Schottky diode solution.

Use Scenario: Primary-side auxiliary supply regulation in offline SMPS during no-load and light-load conditions.

IC Role / Device Role / Timing Role: Linear regulator pass element delivering stable 12 V to control ICs when main converter is in burst mode.

Use Value: Guaranteed V_GS(th) range (−1.0 to −2.5 V) enables precise turn-on threshold for low-power standby sequencing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP10P06T	V_DSS = −60 V, R_DS(on) = 0.65 Ω (max), Q_g = 14 nC; TO-220 package, same pinout	Higher R_DS(on) increases conduction loss by ~18% at 2 A; lower C_iss (360 pF) improves high-frequency drive margin	Preferred where gate drive strength is limited but thermal margin allows higher on-resistance
IRF9540NPBF	V_DSS = −100 V, R_DS(on) = 0.20 Ω (max), Q_g = 56 nC; TO-220 package, same pinout	Higher voltage rating adds cost and capacitance; 2.8× higher Q_g demands stronger gate driver and increases switching loss	Only suitable when −100 V blocking is mandatory; otherwise over-specified for 48 V systems

Compared with IXTP10P06T and IRF9540NPBF, the 2SJ166(1)-T1B-A offers optimal balance of low gate charge (12 nC), moderate on-resistance (0.55 Ω), and proven UIS ruggedness-making it preferred for cost-sensitive 24–48 V industrial switching where driver capability and thermal design are constrained.

Availability

2SJ166(1)-T1B-A is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, industrial power supplies, and AC-DC adapters requiring stable component supply and long-term manufacturability.

Supply support for 2SJ166(1)-T1B-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog and power devices, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SJ166(1)-T1B-A belongs to Renesas' legacy discrete power MOSFET product line, engineered for reliability in industrial-grade power conversion and motor control applications with emphasis on ruggedness and consistent parametric performance.

FAQ

What is the maximum continuous drain current rating for the 2SJ166(1)-T1B-A?

The 2SJ166(1)-T1B-A is rated for −3 A continuous drain current at T_C = 25 °C with adequate heatsinking. This rating decreases linearly with increasing case temperature, reaching zero at approximately 150 °C. Derating curves are provided in the official Renesas datasheet, and actual usable current depends on PCB copper area, heatsink thermal resistance, and ambient conditions. The 2SJ166(1)-T1B-A must not exceed its Safe Operating Area limits under pulsed conditions.

Does the 2SJ166(1)-T1B-A support logic-level gate drive?

Yes, the 2SJ166(1)-T1B-A features a gate threshold voltage range of −1.0 V to −2.5 V, enabling full enhancement with gate-source voltages as low as −5 V. This makes it compatible with standard 5 V logic outputs and many microcontroller GPIOs without requiring level-shifting circuitry. The 2SJ166(1)-T1B-A maintains R_DS(on) ≤ 0.75 Ω at V_GS = −5 V, ensuring usable conduction performance in logic-driven applications.

Is the 2SJ166(1)-T1B-A RoHS compliant?

Yes, the 2SJ166(1)-T1B-A is RoHS compliant per EU Directive 2011/65/EU. It uses lead-free terminations with matte tin plating and meets all restricted substance thresholds. Renesas confirms compliance in its official product change notices and material declarations. The 2SJ166(1)-T1B-A is also halogen-free and complies with JEDEC JS709B requirements for bromine and chlorine content.

What is the avalanche energy rating of the 2SJ166(1)-T1B-A?

The 2SJ166(1)-T1B-A is rated for 100 mJ single-pulse avalanche energy (E_AS) under standardized test conditions (L = 100 µH, I_AS = 3 A, V_DD = 40 V). This rating is verified via 100% Unclamped Inductive Switching (UIS) testing per JEDEC JESD22-A116. The 2SJ166(1)-T1B-A can safely absorb inductive energy transients without failure, reducing or eliminating the need for external snubber networks in motor and relay drive circuits.

What package type does the 2SJ166(1)-T1B-A use?

The 2SJ166(1)-T1B-A is packaged in a TO-220AB outline with an electrically isolated metal tab. It has three leads: Drain (connected to tab), Gate, and Source. The package supports up to 50 W power dissipation at T_C = 25 °C and features a thermal resistance R_θJA of 62.5 °C/W when mounted on a standard 1 in² copper pad. The 2SJ166(1)-T1B-A requires mechanical mounting to a heatsink using appropriate insulating hardware if the tab is not referenced to system ground.

2SJ166(1)-T1B-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SJ166(1)-T1B-A FAQ

1.How can I place an order for 2SJ166(1)-T1B-A through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ166(1)-T1B-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ166(1)-T1B-A reliable?

The price and inventory of 2SJ166(1)-T1B-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ166(1)-T1B-A is usually 5 days.

3.What payment methods are accepted for 2SJ166(1)-T1B-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ166(1)-T1B-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ166(1)-T1B-A?

2SJ166(1)-T1B-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ166(1)-T1B-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ166(1)-T1B-A?

For technical support, including 2SJ166(1)-T1B-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ166(1)-T1B-A requirements.

6.How does Aetrix verify that 2SJ166(1)-T1B-A is sourced from the original manufacturer or authorized distributors?

All 2SJ166(1)-T1B-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ166(1)-T1B-A meets industry standards.

7.What is the process for return or replacement of 2SJ166(1)-T1B-A?

All 2SJ166(1)-T1B-A units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ166(1)-T1B-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ166(1)-T1B-A part is unused and in its original packaging.

Return procedure for 2SJ166(1)-T1B-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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