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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage 2SJ168TE85LF

Name: 2SJ168TE85LF
Brand: Toshiba Semiconductor and Storage
SKU: 2SJ168TE85LF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ168TE85LF

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2SJ168TE85LF.pdf

Description:: MOSFET P-CH 60V 200MA SC59

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SJ168TE85LF from Toshiba is a silicon P-channel enhancement-mode MOSFET designed for high-speed analog and interface switching in low-power signal-path applications. It delivers R_DS(ON) = 1.3 Ω (typ.) at V_GS = −10 V, |Y_fs| = 100 mS (min.) at I_D = −50 mA, t_on = 14 ns (typ.), and operates with V_DSS = −60 V - enabling compact, fast-switching load control in portable audio and logic-level interface circuits.

For engineers reviewing the 2SJ168TE85LF datasheet, 2SJ168TE85LF pinout, 2SJ168TE85LF application, or 2SJ168TE85LF equivalent, key selection criteria include verified P-channel enhancement-mode behavior, SC-59 package compatibility, guaranteed R_DS(ON) ≤ 2.0 Ω at −50 mA, confirmed V_th range of −2 V to −3.5 V, and documented C_iss = 73–85 pF for high-frequency gate drive design.

Technical Context

This device implements a single P-channel vertical DMOS structure optimized for low-voltage, low-current analog switching. Its enhancement-mode operation requires negative gate bias to conduct, and its low output capacitance (C_oss = 48–60 pF) and fast switching times (t_on = 14 ns, t_off = 100 ns) support clean signal routing in bidirectional analog switches and level translators.

The 2SJ168TE85LF is electrically complementary to the N-channel 2SK1062, sharing matched threshold magnitude and similar dynamic parameters - enabling balanced push-pull or H-bridge configurations where symmetrical turn-on/turn-off timing and conduction loss are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−60 V: Maximum drain-source blocking voltage before avalanche breakdown; defines safe operating range in negative-rail switching.
R_DS(ON)	1.3 Ω (typ.) @ I_D = −50 mA, V_GS = −10 V: Low conduction loss enables <100 mW dissipation in small-signal load switching.
\|Y_fs\|	100 mS (min.) @ V_DS = −10 V, I_D = −50 mA: High transconductance ensures strong gate control sensitivity for precise analog gain or switch linearity.
t_on/t_off	14 ns / 100 ns: Fast switching supports >10 MHz digital control rates and minimizes charge injection in sample-hold paths.
C_iss	73–85 pF @ V_DS = −10 V: Input capacitance directly impacts required gate drive current and rise time in high-speed logic interfaces.
V_th	−2 V to −3.5 V @ I_D = −1 mA: Threshold voltage range ensures reliable turn-on with standard −3.3 V or −5 V logic rails.

Pinout & Package

2SJ168TE85LF is housed in the JEITA-standard SC-59 (also known as SOT-323) surface-mount package - a 3-pin, gull-wing leaded plastic case measuring 2.1 × 1.25 × 0.9 mm, rated for 200 mW power dissipation at T_a = 25°C.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Accepts negative V_GS to induce channel; requires ESD-safe handling due to ±20 V absolute max rating.
Drain (D)	Current sink terminal	Connected to higher potential (less negative) node; handles up to −60 V reverse bias and −800 mA pulsed current.
Source (S)	Reference/return terminal	Biased at circuit common or negative rail; forms return path for −200 mA DC drain current.

Key Features

Feature	Design Value
Enhancement-mode operation	Zero conduction at V_GS = 0 V ensures fail-safe off-state in unpowered or floating-gate conditions.
Low R_DS(ON) with moderate V_GS	1.3 Ω achieved at −10 V gate drive - eliminates need for high-voltage gate drivers in −5 V systems.
High \|Y_fs\| for analog linearity	100 mS minimum transconductance supports stable gain and low distortion in analog switch and amplifier stages.
SC-59 package footprint	Compatible with standard SOT-323 reflow profiles and automated pick-and-place; enables high-density PCB layout.

Applications

Audio Signal Routing	Logic-Level Translation
Use Scenario: Switching stereo left/right audio channels between multiple sources in portable media players. IC Role / Device Role: Bidirectional analog switch controlling AC-coupled audio paths with minimal THD. Use Value: Low R_DS(ON) (1.3 Ω) and low C_iss (73 pF) preserve wideband frequency response and reduce crosstalk below −80 dB.	Use Scenario: Level-shifting 3.3 V microcontroller GPIO outputs to drive −5 V logic inputs in legacy industrial controllers. IC Role / Device Role: Inverting level translator with defined V_th window (−2 to −3.5 V) ensuring clean transition thresholds. Use Value: Guaranteed V_th range and fast t_on/t_off enable reliable 10 MHz translation without pulse skew or metastability.
Power Rail Switching	Interface Protection
Use Scenario: Enabling/disabling −3.3 V auxiliary supply rails in battery-powered instrumentation. IC Role / Device Role: Low-loss high-side switch isolating downstream circuitry during sleep mode. Use Value: R_DS(ON) ≤ 2.0 Ω limits voltage drop to <100 mV at 50 mA load, preserving regulation accuracy and reducing self-heating.	Use Scenario: Protecting sensitive analog inputs from overvoltage events in sensor interface ICs. IC Role / Device Role: Clamping switch activated by fault-detection logic to shunt transient energy to ground. Use Value: Fast t_on (14 ns) and low C_oss (48 pF) minimize added capacitance on protected nodes while responding before damage occurs.

Audio Signal Routing

Logic-Level Translation

Use Scenario: Switching stereo left/right audio channels between multiple sources in portable media players.

IC Role / Device Role: Bidirectional analog switch controlling AC-coupled audio paths with minimal THD.

Use Value: Low R_DS(ON) (1.3 Ω) and low C_iss (73 pF) preserve wideband frequency response and reduce crosstalk below −80 dB.

Use Scenario: Level-shifting 3.3 V microcontroller GPIO outputs to drive −5 V logic inputs in legacy industrial controllers.

IC Role / Device Role: Inverting level translator with defined V_th window (−2 to −3.5 V) ensuring clean transition thresholds.

Use Value: Guaranteed V_th range and fast t_on/t_off enable reliable 10 MHz translation without pulse skew or metastability.

Power Rail Switching

Interface Protection

Use Scenario: Enabling/disabling −3.3 V auxiliary supply rails in battery-powered instrumentation.

IC Role / Device Role: Low-loss high-side switch isolating downstream circuitry during sleep mode.

Use Value: R_DS(ON) ≤ 2.0 Ω limits voltage drop to <100 mV at 50 mA load, preserving regulation accuracy and reducing self-heating.

Use Scenario: Protecting sensitive analog inputs from overvoltage events in sensor interface ICs.

IC Role / Device Role: Clamping switch activated by fault-detection logic to shunt transient energy to ground.

Use Value: Fast t_on (14 ns) and low C_oss (48 pF) minimize added capacitance on protected nodes while responding before damage occurs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SJ201TE85LF	Higher V_DSS (−100 V), higher R_DS(ON) (2.5 Ω typ.), same SC-59 package	Better suited for higher-voltage industrial sensing; less optimal for low-drop audio switching	Choose when system V_DS exceeds −60 V but gate drive remains −10 V
XP151A11B0MR	Lower V_DSS (−20 V), lower R_DS(ON) (0.8 Ω typ.), same SOT-323 footprint	Optimized for 1.8–3.3 V logic domains; unsuitable for −5 V or −10 V gate drive	Prefer when operating from low-voltage rails and minimizing on-resistance is critical

Compared with 2SJ168TE85LF, 2SJ201TE85LF trades lower on-resistance for higher voltage capability, while XP151A11B0MR sacrifices voltage margin to achieve sub-1 Ω conduction - making the 2SJ168TE85LF the balanced choice for −5 V to −10 V gate-driven, −60 V-rated analog and interface switching.

Availability

2SJ168TE85LF is available at Aetrix Electronics and suitable for audio signal routing, logic-level translation, and power rail switching requiring stable component supply across consumer electronics, test equipment, and industrial control designs.

Supply support for 2SJ168TE85LF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and miniaturization for global electronics markets.

The 2SJ168TE85LF belongs to Toshiba's legacy SC-59 P-channel MOSFET family, engineered specifically for low-power, high-speed analog and digital interface switching in space-constrained portable and instrumentation applications.

FAQ

What is the gate threshold voltage range for the 2SJ168TE85LF?

The 2SJ168TE85LF has a specified gate threshold voltage (V_th) range of −2 V to −3.5 V at I_D = −1 mA and V_DS = −10 V. This negative threshold confirms its P-channel enhancement-mode behavior, meaning it conducts only when V_GS is sufficiently negative relative to source. The 2SJ168TE85LF reliably turns on with standard −3.3 V or −5 V logic levels, supporting direct interfacing with common microcontroller outputs without level-shifting circuitry.

Is the 2SJ168TE85LF suitable for bidirectional analog switching?

Yes, the 2SJ168TE85LF supports bidirectional analog signal routing due to its symmetrical drain-source structure and low R_DS(ON) (1.3 Ω typ.). Its low input capacitance (C_iss = 73–85 pF) and minimal charge injection (<10 fC) ensure minimal signal distortion and crosstalk in audio and sensor signal paths. The 2SJ168TE85LF is explicitly cited in Toshiba documentation for analog switch applications, confirming its suitability for AC-coupled, low-voltage signal multiplexing.

What package type does the 2SJ168TE85LF use, and is it RoHS compliant?

The 2SJ168TE85LF uses the JEITA-standard SC-59 package (equivalent to SOT-323), a 3-pin surface-mount plastic case with gull-wing leads. Per Toshiba's official product documentation and environmental compliance statements, the 2SJ168TE85LF is RoHS-compliant and lead-free. Its marking "TE85LF" denotes tape-and-reel packaging and lead-free finish, meeting EU RoHS Directive requirements for restricted substances.

How does the 2SJ168TE85LF compare to its complementary N-channel counterpart 2SK1062?

The 2SJ168TE85LF is Toshiba's designated P-channel complement to the N-channel 2SK1062, sharing matched V_th magnitude, similar R_DS(ON), and compatible dynamic parameters (t_on, C_iss). This pairing enables balanced push-pull or H-bridge topologies where symmetrical turn-on characteristics and conduction loss are essential. The 2SJ168TE85LF and 2SK1062 are jointly referenced in Toshiba's application notes for dual-rail interface and analog switch designs.

What is the maximum continuous drain current rating for the 2SJ168TE85LF?

The 2SJ168TE85LF has a maximum continuous DC drain current (I_D) rating of −200 mA at T_a = 25°C. Its pulsed drain current (I_DP) is rated at −800 mA, allowing short-duration surge handling. Thermal derating applies above 25°C ambient - for example, at 70°C, the usable I_D drops to approximately −120 mA. These ratings are validated under the SC-59 package's 200 mW power dissipation limit and must be applied with appropriate PCB copper area for heat spreading.

2SJ168TE85LF Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 85 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 200mW (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-59

2SJ168TE85LF FAQ

1.How can I place an order for 2SJ168TE85LF through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ168TE85LF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ168TE85LF reliable?

The price and inventory of 2SJ168TE85LF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ168TE85LF is usually 5 days.

3.What payment methods are accepted for 2SJ168TE85LF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ168TE85LF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ168TE85LF?

2SJ168TE85LF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ168TE85LF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ168TE85LF?

For technical support, including 2SJ168TE85LF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ168TE85LF requirements.

6.How does Aetrix verify that 2SJ168TE85LF is sourced from the original manufacturer or authorized distributors?

All 2SJ168TE85LF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ168TE85LF meets industry standards.

7.What is the process for return or replacement of 2SJ168TE85LF?

All 2SJ168TE85LF units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ168TE85LF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ168TE85LF part is unused and in its original packaging.

Return procedure for 2SJ168TE85LF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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