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Renesas 2SJ176-E

Part No.:
2SJ176-E
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SJ176-E.pdf
Description:
P-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,260

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Product details

Overview

2SJ176-E from Toshiba is a silicon P-channel enhancement-mode MOSFET designed for high-speed power switching in DC-DC converters and motor drive circuits. It features –60 V VDSS, –15 A continuous drain current, 0.09 Ω RDS(on) at VGS = –10 V, 4 V gate threshold compatibility with 5 V logic, and integrated body diode with 230 ns reverse recovery time.

For engineers reviewing the 2SJ176-E datasheet, 2SJ176-E pinout, 2SJ176-E application, or 2SJ176-E equivalent, key selection criteria include its low RDS(on) at low gate drive, fast switching (15 ns turn-on delay), TO-220FM package thermal performance, and suitability for solenoid and brushed DC motor control where bidirectional conduction and compact layout are critical.

Technical Context

This P-channel MOSFET operates as a high-side switch in buck converters and H-bridge half-bridges, leveraging its –1.0 to –2.0 V VGS(off) for reliable depletion-free turn-off and 0.11 Ω max RDS(on) at –4 V gate drive to enable direct 5 V microcontroller interfacing without level-shifting. Its 1400 pF Ciss and 220 pF Crss support stable gate drive design with minimal Miller-induced oscillation.

The device integrates a body diode rated for –15 A continuous forward current and 230 ns trr, enabling synchronous rectification in flyback topologies and freewheeling in inductive loads. Thermal derating follows a defined 4.17°C/W θch–c, with safe operating area limited by RDS(on) above 100 µs pulse width at TC = 25°C.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS–60 V: Maximum blocking voltage in high-side switch configurations without avalanche stress
RDS(on)0.09 Ω typ @ VGS = –10 V: Enables <1.5 W conduction loss at –8 A, reducing heatsink requirements
VGS(off)–1.0 to –2.0 V: Ensures full turn-off with standard 5 V logic high, eliminating need for negative bias
td(on)15 ns typ: Supports >10 MHz switching in resonant converters with minimal dead-time overhead
Ciss1400 pF: Dictates gate drive strength requirement (~0.7 A peak for 20 ns rise with 10 Ω gate resistor)
trr230 ns: Permits use in 100 kHz–500 kHz flyback/freewheeling applications without snubber penalties
Pch30 W @ TC = 25°C: Defines maximum continuous power dissipation with adequate heatsinking

Pinout & Package

Package: TO-220FM - insulated tab, vertical mounting, 4.17°C/W junction-to-case thermal resistance, compatible with standard TO-220 heatsinks.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives negative gate-source voltage to turn on; requires ≤±10 µA leakage budget in driver design
2 (Drain)High-side power outputConnected to input rail in high-side switch; carries full load current and withstands –60 V transients
3 (Source)Reference node / return pathBonded to metal tab; must be tied to system ground or floating reference; provides body diode cathode

Key Features

FeatureDesign Value
Low RDS(on) at 4 V drive0.13 Ω max @ VGS = –4 V enables direct 5 V MCU control without gate driver IC
Fast switching speed15 ns td(on) + 120 ns tr supports efficient operation up to 1 MHz in hard-switched topologies
Integrated body diodeVDF = –1.2 V @ –15 A allows freewheeling in motor drives without external diode
TO-220FM insulationElectrically isolated metal tab eliminates need for insulating washer in grounded heatsink designs
Thermal robustness150°C max channel temperature and defined SOA curve permit sustained 15 A operation with proper PCB copper area

Applications

Brushed DC Motor ControlDC-DC Buck Converter

Use Scenario: Driving 12 V/24 V brushed motors in automotive seat adjusters and industrial actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor voltage polarity and enabling regenerative braking via body diode conduction.

Use Value: 0.09 Ω RDS(on) limits I²R losses to <1 W at 10 A, extending battery life and reducing thermal management complexity.

Use Scenario: Main switching element in non-isolated 24 V to 5 V buck regulators for embedded controllers.

IC Role / Device Role / Timing Role: Synchronous high-side switch paired with N-channel low-side FET; operates at 250 kHz with 15 ns turn-on delay.

Use Value: 230 ns trr and low Crss minimize shoot-through risk and EMI during dead-time transitions.

Solenoid DriverPower Distribution Switch

Use Scenario: Controlling 12 V automotive solenoids (e.g., fuel injectors, transmission valves) requiring fast turn-off.

IC Role / Device Role / Timing Role: High-side switch managing inductive load current; body diode handles flyback energy during de-energization.

Use Value: 220 ns td(off) + 160 ns tf ensures <400 ns total turn-off, preventing solenoid hold-time drift in precision timing systems.

Use Scenario: Overcurrent-protected 12 V power rail switch in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Primary power path switch with built-in thermal shutdown margin via 150°C Tch rating and SOA-limited pulse handling.

Use Value: 30 W Pch at TC = 25°C supports 15 A continuous delivery with 2 oz copper and 25 mm² thermal pad area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF9540NPbFRDS(on) = 0.2 Ω min @ VGS = –10 V; higher on-resistance than 2SJ176-E's 0.09 Ω typLower switching speed (td(on) = 25 ns); less suitable for >500 kHz operationPreferred where cost sensitivity outweighs efficiency and frequency demands
STP12PF06VDSS = –60 V same; RDS(on) = 0.12 Ω typ @ –10 V; Ciss = 1200 pF (lower)Higher VGS(th) (–2 to –4 V) requires stronger gate drive for full enhancementSelected when lower input capacitance reduces gate drive loss but gate drive voltage ≥ –10 V is available

Compared with IRF9540NPbF and STP12PF06, the 2SJ176-E delivers superior conduction efficiency at low gate drive and faster switching-critical for space-constrained motor drivers-while maintaining identical –60 V rating and TO-220FM mechanical compatibility.

Availability

2SJ176-E is available at Aetrix Electronics and suitable for brushed DC motor control, DC-DC buck converter design, and solenoid driver applications requiring stable component supply and long-term industrial availability.

Supply support for 2SJ176-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on automotive, industrial, and consumer power efficiency.

The 2SJ176-E belongs to Toshiba's legacy high-speed power MOSFET family, engineered specifically for 5 V-compatible high-side switching in motor, solenoid, and DC-DC applications where low gate drive current and fast transient response are essential.

FAQ

What is the maximum continuous drain current for the 2SJ176-E at 25°C case temperature?

The 2SJ176-E supports –15 A continuous drain current (ID) at TC = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper heatsinking and adherence to the derating curve shown in Figure 4 of the datasheet, where power dissipation decreases linearly above 25°C case temperature.

Can the 2SJ176-E be driven directly from a 5 V microcontroller GPIO pin?

Yes-the 2SJ176-E is explicitly characterized as a "4 V gate drive device" and can be fully enhanced with VGS = –4 V. Since a 5 V MCU outputs 0 V (low) and 5 V (high), pairing it with an inverting driver stage (e.g., NPN transistor or logic inverter) yields –4 V to –5 V gate-source voltage, satisfying the device's VGS(off) and RDS(on) specifications without external level shifters.

Does the 2SJ176-E have a built-in body diode, and what are its key parameters?

Yes-the 2SJ176-E integrates a body diode between drain and source. Its forward voltage is –1.2 V at –15 A (VDF), and reverse recovery time is 230 ns (trr) under specified test conditions (IF = –15 A, diF/dt = 50 A/µs). This diode enables freewheeling in inductive loads and simplifies circuit design in H-bridge and buck topologies.

What is the thermal resistance from channel to case (θch–c) for the 2SJ176-E?

The 2SJ176-E has a channel-to-case thermal resistance (θch–c) of 4.17°C/W, measured under steady-state conditions with the device mounted on a standard heatsink per JEDEC standards. This value is used to calculate junction temperature rise (Tj = TC + Pch × θch–c) and verify operation within the 150°C absolute maximum channel temperature limit.

Is the 2SJ176-E suitable for synchronous rectification in DC-DC converters?

The 2SJ176-E is not optimized for synchronous rectification due to its relatively high RDS(on) (0.09 Ω) and moderate tr/tf compared to dedicated SR FETs. However, it can serve as a high-side switch in buck converters where the low-side element handles rectification. For true synchronous rectification, lower RDS(on) and faster switching devices are recommended.

2SJ176-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SJ176-E FAQ

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Please submit a Request for Quotation (RFQ) for 2SJ176-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ176-E reliable?

The price and inventory of 2SJ176-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ176-E is usually 5 days.

3.What payment methods are accepted for 2SJ176-E?

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Note: Certain payment methods may incur a processing fee.

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2SJ176-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ176-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ176-E?

For technical support, including 2SJ176-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ176-E requirements.

6.How does Aetrix verify that 2SJ176-E is sourced from the original manufacturer or authorized distributors?

All 2SJ176-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ176-E meets industry standards.

7.What is the process for return or replacement of 2SJ176-E?

All 2SJ176-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ176-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ176-E part is unused and in its original packaging.

Return procedure for 2SJ176-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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