My Inquiry
My Account
Renesas 2SJ181-90STL
- Part No.:
- 2SJ181-90STL
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
2SJ181-90STL.pdf
- Description:
- P-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,674
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SJ181-90STL from Renesas is a silicon P-channel MOSFET designed for high-speed power switching in offline DC-DC converters and switching regulators. It features –600 V drain-to-source breakdown voltage, 25 Ω maximum RDS(on) at –10 V VGS, –0.5 A continuous drain current, and 230 ns body-diode reverse recovery time - enabling robust high-voltage flyback and forward converter primary-side switching.
For engineers reviewing the 2SJ181-90STL datasheet, 2SJ181-90STL pinout, 2SJ181-90STL application, or 2SJ181-90STL equivalent, key selection criteria include verified –600 V blocking capability, low gate charge (typ. 20 nC), DPAK(S) package thermal performance, and suitability for isolated SMPS topologies requiring rugged P-channel high-side control.
Technical Context
This device operates as a normally-off enhancement-mode P-channel MOSFET with gate threshold voltage between –2.0 V and –4.0 V, optimized for high-voltage, low-duty-cycle switching where secondary breakdown immunity is critical. Its 220 pF input capacitance and 13 pF reverse transfer capacitance support stable gate drive in hard-switched topologies up to several hundred kHz.
The integrated body diode exhibits –0.85 V forward voltage at –0.5 A and 230 ns reverse recovery time under 50 A/µs di/dt - characteristics validated for freewheeling in discontinuous conduction mode (DCM) flyback converters without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –600 V: Enables direct use in 400 V AC-input offline SMPS without series stacking. |
| RDS(on) max | 25 Ω @ –10 V VGS: Supports <1 W conduction loss at –0.3 A, suitable for low-power auxiliary supplies. |
| ID cont. | –0.5 A: Rated for continuous operation in low-current high-voltage switch positions (e.g., bias winding control). |
| tr/tf | 20 ns / 35 ns: Fast switching enables >200 kHz operation with minimal overlap loss in self-oscillating converters. |
| VGS(off) | –2.0 to –4.0 V: Ensures reliable turn-off margin against gate noise in high-dV/dt environments. |
| Ciss | 220 pF: Low input capacitance reduces gate drive power and improves EMI behavior in compact layouts. |
| trr | 230 ns: Confirmed body-diode recovery supports DCM flyback without oscillation or voltage overshoot. |
Pinout & Package
2SJ181-90STL uses the DPAK(S) surface-mount package (RENESAS code PRSS0004ZD-C, JEITA SC-63), with 3.1 mm × 5.4 mm footprint and 1.7 mm height. Thermal resistance θch–c = 6.25°C/W enables 20 W channel dissipation at Tc = 25°C with adequate copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control electrode | Accepts negative VGS to modulate channel; requires –10 V for full enhancement and low RDS(on). |
| 2 (Drain) | High-voltage output terminal | Connected to primary winding or HV rail; rated for –600 V repetitive blocking. |
| 3 (Source) | Reference node | Serves as return path for ID; tied to controller ground or floating bias supply in high-side configurations. |
| 4 (Drain) | Thermal & electrical parallel | Second drain tab electrically and thermally connected to Pin 2 - must be soldered to PCB copper for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Guarantees safe operation under SOA-limited conditions (e.g., startup surge, overload) without derating curves. |
| Low drive current requirement | Typical gate charge of 20 nC allows direct drive from low-power PWM controllers like UC3842 derivatives. |
| Body diode with fast trr | 230 ns reverse recovery supports clean freewheeling in DCM flyback without snubber networks. |
| High VGSS rating | ±15 V gate tolerance prevents damage during gate driver transients or layout coupling. |
| Low IDSS | ≤ –100 µA leakage at –500 V ensures minimal standby power loss in always-on auxiliary supplies. |
Applications
| AC-DC Adapter Primary Switch | Flyback Converter Bias Winding Control |
|---|---|
Use Scenario: 12 V/0.3 A auxiliary supply in 65 W laptop adapter, powered from main transformer bias winding. IC Role / Device Role / Timing Role: P-channel high-side switch regulating bias voltage via duty-cycle modulation. Use Value: –600 V VDSS withstands reflected flyback spikes; 25 Ω RDS(on) limits conduction loss to <0.5 W at full load. |
Use Scenario: Isolated feedback path activation in universal-input offline SMPS using optocoupler-driven gate control. IC Role / Device Role / Timing Role: High-voltage level-shifting switch enabling opto-coupled signal transmission to primary-side controller. Use Value: ±15 V VGSS rating tolerates gate coupling noise; –4.0 V VGS(off) ensures noise-immune turn-off. |
| Industrial Sensor Power Supply | Programmable Logic Controller (PLC) Input Stage |
Use Scenario: 24 V isolated sensor excitation supply in harsh industrial environment with wide temperature range. IC Role / Device Role / Timing Role: Primary-side switch in low-frequency (<100 kHz) flyback delivering regulated 24 V to analog front-end. Use Value: 150°C channel temperature rating supports operation at 85°C ambient with 20 K rise; no secondary breakdown eliminates SOA derating. |
Use Scenario: High-side switching of 24 V DC inputs in modular PLC backplane with transient protection. IC Role / Device Role / Timing Role: Input stage MOSFET providing overvoltage clamping and controlled turn-on for field wiring. Use Value: –0.85 V VDF minimizes dropout across input protection circuitry; 230 ns trr prevents latch-up during fast ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel high-voltage switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SJ179-90STL | Same DPAK(S) package, but –500 V VDSS and 35 Ω RDS(on) max. | Limited to ≤375 V AC-input designs; higher conduction loss reduces efficiency in low-ID bias supplies. | Select only when system peak voltage remains below 400 V and thermal budget permits higher RDS(on). |
| 2SK3792-Z-E | N-channel counterpart with –900 V VDSS, but requires isolated gate drive and lacks integrated body diode. | Enables higher-efficiency topologies (e.g., active clamp) but increases BOM count and layout complexity. | Prefer for new designs targeting >500 V AC input or needing lower RDS(on); avoid if gate drive isolation is cost- or space-constrained. |
Compared with 2SJ181-90STL, 2SJ179-90STL trades voltage headroom for identical footprint and drive simplicity, while 2SK3792-Z-E offers superior voltage rating and conduction performance at the cost of gate drive complexity and missing body-diode functionality.
Availability
2SJ181-90STL is available at Aetrix Electronics and suitable for AC-DC adapters, industrial flyback converters, and programmable logic controller input stages requiring stable component supply and long-term production continuity.
Supply support for 2SJ181-90STL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The 2SJ181-90STL belongs to Renesas' legacy high-voltage discrete MOSFET family, engineered specifically for reliability-critical offline power conversion where ruggedness, predictable SOA, and body-diode performance outweigh ultra-low RDS(on) requirements.
FAQ
What is the maximum continuous drain current rating for the 2SJ181-90STL?
The 2SJ181-90STL has a continuous drain current rating of –0.5 A at Tc = 25°C. This value is thermally limited by its 20 W channel dissipation and 6.25°C/W junction-to-case thermal resistance. At elevated case temperatures, derating applies per the power vs. temperature curve on page 3 of the datasheet. The 2SJ181-90STL maintains this rating without secondary breakdown limitations.
Does the 2SJ181-90STL have an integrated body diode, and what are its key parameters?
Yes, the 2SJ181-90STL includes an integrated body diode rated for –0.5 A reverse current. Its forward voltage is –0.85 V at –0.5 A and VGS = 0, and its reverse recovery time is 230 ns under 50 A/µs di/dt conditions. These values are measured and specified in the Electrical Characteristics table on page 2 of the datasheet for the 2SJ181-90STL.
What package type does the 2SJ181-90STL use, and how is it mounted?
The 2SJ181-90STL uses the DPAK(S) surface-mount package (RENESAS code PRSS0004ZD-C, JEITA SC-63), featuring four terminals with Pins 2 and 4 both connected to the drain and intended for thermal and electrical connection to PCB copper. Mounting requires soldering all terminals, especially the dual drain tabs, to a minimum 100 mm² copper area for thermal performance.
Can the 2SJ181-90STL be used in place of an N-channel MOSFET in high-side switching applications?
Yes - the 2SJ181-90STL is a P-channel device inherently suited for high-side switching without level-shifting gate drive circuitry. Unlike N-channel alternatives, it turns on with VGS ≈ –10 V relative to source, simplifying control in applications like bias winding regulation or isolated feedback paths where the source connects to a positive rail. The 2SJ181-90STL's –600 V rating and no-secondary-breakdown design reinforce this use case.
What is the gate threshold voltage range for the 2SJ181-90STL, and why does it matter?
The 2SJ181-90STL has a gate-to-source cutoff voltage (VGS(off)) range of –2.0 V to –4.0 V, defined at ID = –1 mA. This ensures reliable turn-off even with gate noise up to ±1 V, critical in high-dV/dt SMPS environments. Operating the 2SJ181-90STL with VGS ≤ –4.5 V guarantees full enhancement and minimal RDS(on), while staying above –2.0 V avoids unintended conduction.
2SJ181-90STL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 25Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 220 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 20W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK-3
2SJ181-90STL FAQ
1.How can I place an order for 2SJ181-90STL through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ181-90STL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ181-90STL reliable?
The price and inventory of 2SJ181-90STL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ181-90STL is usually 5 days.
3.What payment methods are accepted for 2SJ181-90STL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ181-90STL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ181-90STL?
2SJ181-90STL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ181-90STL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ181-90STL?
For technical support, including 2SJ181-90STL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ181-90STL requirements.
6.How does Aetrix verify that 2SJ181-90STL is sourced from the original manufacturer or authorized distributors?
All 2SJ181-90STL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ181-90STL meets industry standards.
7.What is the process for return or replacement of 2SJ181-90STL?
All 2SJ181-90STL units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ181-90STL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ181-90STL part is unused and in its original packaging.
Return procedure for 2SJ181-90STL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SJ181-90STL Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
