Renesas 2SJ199(0)-T1-AZ

Overview

2SJ199(0)-T1-AZ from Renesas Electronics is a P-channel enhancement-mode vertical power MOSFET designed for high-efficiency DC-DC converters and motor drive applications. It features a drain-source voltage rating of −60 V, continuous drain current of −7 A at T_c = 25 °C, on-resistance of 0.28 Ω (max) at V_GS = −10 V, and gate charge of 24 nC - enabling fast switching with low conduction loss in synchronous buck topologies.

For engineers reviewing the 2SJ199(0)-T1-AZ datasheet, 2SJ199(0)-T1-AZ pinout, 2SJ199(0)-T1-AZ application, or 2SJ199(0)-T1-AZ equivalent, key selection criteria include its −60 V V_DSS, 0.28 Ω R_DS(on) at −10 V, TO-220AB package thermal performance, and suitability as a high-side switch in industrial power supplies requiring <10 A load capability.

Technical Context

This MOSFET operates in enhancement mode with a negative gate threshold voltage (−1.0 to −2.5 V), ensuring reliable turn-off under zero-gate-bias conditions. Its vertical structure supports high current density and low specific on-resistance, while the integrated body diode exhibits reverse recovery time (t_rr) of 120 ns and peak reverse recovery current (I_RRM) of 7 A.

The device is rated for junction temperature up to 150 °C and features avalanche energy rating (E_AS) of 110 mJ, supporting robust operation in inductive switching circuits. Its SOA curve is defined up to 100 µs pulse width with derating above 25 °C case temperature.

Key Specifications

Pinout & Package

2SJ199(0)-T1-AZ is housed in a TO-220AB package with isolated tab (drain-connected), offering mechanical robustness and thermal dissipation via mounting to heatsink. The package outline conforms to JEDEC TO-220AB standard, with 3.8 mm creepage/clearance and 1.5 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IXTP10P60P and IRF9540NPBF, the 2SJ199(0)-T1-AZ delivers optimal balance of low R_DS(on), moderate Q_g, and −60 V rating for 48 V industrial power stages - minimizing total power loss without over-specifying voltage or gate drive demand.

Availability

2SJ199(0)-T1-AZ is available at Aetrix Electronics and suitable for industrial power supplies, motor drives, and LED drivers requiring stable component supply and long-term manufacturability.

Supply support for 2SJ199(0)-T1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer headquartered in Japan, specializing in microcontrollers, analog, power, and mixed-signal solutions for industrial, automotive, and infrastructure markets.

The 2SJ199(0)-T1-AZ belongs to Renesas' legacy power MOSFET product line, engineered for high-reliability industrial power conversion where ruggedness, predictable SOA, and avalanche capability are prioritized over ultra-high-frequency switching.

FAQ

What is the maximum junction temperature rating for the 2SJ199(0)-T1-AZ?

The 2SJ199(0)-T1-AZ has a maximum junction temperature (T_j(max)) of 150 °C, as specified in the Renesas Electronics datasheet. This rating defines the upper thermal limit for safe operation under continuous conduction or pulsed conditions. Derating curves apply above 25 °C case temperature, and thermal design must ensure that actual T_j remains below this value during worst-case load and ambient conditions. The 2SJ199(0)-T1-AZ achieves this using its TO-220AB package with exposed drain tab for heatsink mounting.

Does the 2SJ199(0)-T1-AZ have avalanche capability, and how is it rated?

Yes, the 2SJ199(0)-T1-AZ is fully avalanche-rated with a single-pulse avalanche energy (E_AS) of 110 mJ at T_j = 25 °C. This rating is verified per JEDEC JESD24-11 test conditions and confirms robustness against inductive switching transients. The 2SJ199(0)-T1-AZ can safely absorb this energy without parametric shift or failure, making it suitable for flyback, buck-derived, and relay-driving applications where unclamped inductive kick occurs. No external snubber is required solely for avalanche protection.

What is the gate threshold voltage range for the 2SJ199(0)-T1-AZ, and why does it matter?

The 2SJ199(0)-T1-AZ has a gate threshold voltage (V_GS(th)) range of −1.0 V to −2.5 V, measured at I_D = −1 mA. This negative threshold ensures the device remains fully off at 0 V gate bias - a critical feature for high-side P-channel configurations where gate drive may float during controller reset or power-up. The 2SJ199(0)-T1-AZ leverages this behavior to provide inherent fail-safe shutdown, eliminating risk of unintended conduction in fault conditions.

Can the 2SJ199(0)-T1-AZ be used in linear mode, and what limits its safe operating area?

Yes, the 2SJ199(0)-T1-AZ supports linear (active) mode operation, with a defined Safe Operating Area (SOA) curve covering DC, 10 ms, and 100 µs pulse widths. Its SOA is limited by both thermal constraints (junction-to-case resistance of 2.5 °C/W) and secondary breakdown. At 25 °C case temperature, it supports up to 7 A at 10 V V_DS in DC mode. The 2SJ199(0)-T1-AZ must be operated within published SOA boundaries to avoid thermal runaway or localized hot-spot formation.

Is the 2SJ199(0)-T1-AZ RoHS-compliant and lead-free?

Yes, the 2SJ199(0)-T1-AZ is RoHS-compliant and lead-free, meeting EU Directive 2011/65/EU requirements. Renesas Electronics confirms compliance in official product change notifications and material declarations. The "-AZ" suffix explicitly denotes lead-free, halogen-free, and RoHS-conforming packaging. The 2SJ199(0)-T1-AZ uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for unlimited floor life at ≤30 °C/85 % RH.