Renesas 2SJ210(0)-T1B-AT

Overview

2SJ210(0)-T1B-AT from Renesas Electronics is a P-channel vertical MOSFET designed for low-voltage, high-speed switching in digital logic interfaces. It features −60 V V_DSS, −200 mA I_D(DC), 15 Ω R_DS(on) at V_GS = −4.0 V, 45 mS |y_fs|, and SC-59 (Mini Mold) package. It is directly drivable by 5 V CMOS/TTL outputs and used in level-shifting and load-switching circuits.

For engineers reviewing the 2SJ210(0)-T1B-AT datasheet, 2SJ210(0)-T1B-AT pinout, 2SJ210(0)-T1B-AT application, or 2SJ210(0)-T1B-AT equivalent, key selection criteria include gate threshold voltage (−1.4 to −2.4 V), low gate charge enabling fast turn-on/turn-off (t_d(on) = 120 ns), and ESD-protected internal gate-source diode - critical for robustness in portable and industrial control designs.

Technical Context

The 2SJ210(0)-T1B-AT operates as a depletion-mode P-channel MOSFET with negative gate cutoff voltage (V_GS(off) = −1.4 to −2.4 V), allowing it to conduct at zero gate bias and switch off with a negative gate drive. Its high input impedance eliminates gate drive current concerns, simplifying interface with microcontroller GPIOs and logic buffers.

It exhibits low output capacitance (C_iss = 27 pF, C_oss = 21 pF) and fast switching dynamics (t_r = 190 ns, t_f = 180 ns), optimized for pulse-width modulation and digital signal routing where minimal propagation delay and low capacitive loading are required.

Key Specifications

Pinout & Package

2SJ210(0)-T1B-AT is housed in the SC-59 (Mini Mold) surface-mount package - 2.9 mm × 1.5 mm × 0.95 mm, 3-pin, gull-wing leads. The package supports reflow soldering and provides thermal resistance of ~300°C/W (junction-to-ambient, typical).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with 2SJ210(0)-T1B-AT, the 2SJ314(0)-T1B-AT trades speed for higher voltage rating and lower R_DS(on), while the Si2301DS-T1-BE3 sacrifices depletion-mode simplicity for significantly lower on-resistance in low-voltage enhancement-mode operation - making each alternative optimal only within distinct voltage, speed, and control architecture constraints.

Availability

2SJ210(0)-T1B-AT is available at Aetrix Electronics and suitable for industrial control panels, portable instrumentation, and consumer audio equipment requiring stable component supply and long-lifecycle support.

Supply support for 2SJ210(0)-T1B-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The 2SJ210(0)-T1B-AT belongs to Renesas' legacy discrete MOSFET family targeting cost-sensitive, low-power digital switching - engineered for direct logic interfacing and minimal external component count in space-constrained PCBs.

FAQ

What is the gate threshold voltage range for the 2SJ210(0)-T1B-AT?

The 2SJ210(0)-T1B-AT has a gate cutoff voltage V_GS(off) ranging from −1.4 V to −2.4 V at V_DS = −5.0 V and I_D = −1.0 µA. This depletion-mode characteristic means the device conducts at 0 V gate bias and turns off when the gate is pulled negative beyond this threshold. Designers must ensure gate drive reaches at least −2.4 V for guaranteed off-state in worst-case conditions. The 2SJ210(0)-T1B-AT's specified range reflects process variation across production lots.

Can the 2SJ210(0)-T1B-AT be used in high-frequency switching applications?

Yes - the 2SJ210(0)-T1B-AT supports switching frequencies up to approximately 1 MHz due to its low capacitances (C_iss = 27 pF, C_oss = 21 pF) and fast transition times (t_r = 190 ns, t_f = 180 ns). However, its R_DS(on) increases at higher currents and temperatures, so thermal derating must be applied above 100 kHz in continuous conduction. The 2SJ210(0)-T1B-AT is best suited for digital signal routing and moderate-duty PWM, not resonant or RF power conversion.

Does the 2SJ210(0)-T1B-AT include built-in ESD protection?

Yes - the 2SJ210(0)-T1B-AT integrates a gate-source protection diode explicitly noted in the datasheet as an ESD safeguard. This diode clamps transient voltages before they damage the thin gate oxide. However, Renesas specifies that external protection remains necessary if system-level transients exceed the rated V_GS = ±20 V. The 2SJ210(0)-T1B-AT's internal diode meets JEDEC JS-001 Class 2 HBM standards but does not replace board-level TVS devices in harsh environments.

What is the maximum power dissipation for the 2SJ210(0)-T1B-AT at room temperature?

The 2SJ210(0)-T1B-AT has a total power dissipation rating of 200 mW at T_A = 25°C. This value drops linearly with ambient temperature, reaching 0 mW at 150°C per the derating curve. At 25°C, this allows continuous operation at −200 mA with V_DS ≤ 1 V (P = I × V), or lower currents at higher V_DS. The 2SJ210(0)-T1B-AT's SC-59 package limits heat spreading, so PCB copper area and airflow must be considered for sustained loads near the 200 mW limit.

Is the 2SJ210(0)-T1B-AT suitable for automotive applications?

No - the 2SJ210(0)-T1B-AT is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and consumer electronics. It is not qualified to AEC-Q101 or rated for automotive temperature ranges (−40°C to +125°C). Its specified operating range is −55°C to +150°C storage, but electrical characteristics are only guaranteed from −20°C to +85°C. For automotive use, Renesas recommends qualified alternatives such as the RQ3E080AT or RV1C002UNT.