Renesas 2SJ211(0)-T1B-A

Overview

2SJ211(0)-T1B-A from Renesas Electronics is a P-channel vertical MOSFET designed for low-voltage switching applications, featuring −100 V drain-to-source voltage rating, 200 mW total power dissipation, and gate threshold voltage of −1.4 to −2.4 V. It supports direct drive from 5 V logic ICs, exhibits R_DS(on) as low as 11 Ω at V_GS = −10 V, and is commonly used in relay and solenoid driver circuits.

For engineers reviewing the 2SJ211(0)-T1B-A datasheet, 2SJ211(0)-T1B-A pinout, 2SJ211(0)-T1B-A application, or 2SJ211(0)-T1B-A equivalent, key selection criteria include verified gate-drive compatibility with 5 V CMOS/TTL outputs, confirmed SC-59 package thermal performance up to 150 °C channel temperature, and validated R_DS(on) and switching time specs under pulsed ID = −10 mA conditions.

Technical Context

The 2SJ211(0)-T1B-A operates as a depletion-mode P-channel MOSFET with integrated gate-source protection diode for ESD robustness. Its vertical structure enables low on-resistance while maintaining high input impedance, eliminating external bias resistors in simple switch configurations.

It is characterized for DC and pulsed operation (PW ≤ 10 ms, duty cycle ≤ 50%), with guaranteed V_GS(off) range (−1.4 to −2.4 V) and forward transfer admittance |y_fs| of 20–45 mS at V_DS = −5.0 V, ID = −10 mA - enabling predictable gain in linear-region biasing where applicable.

Key Specifications

Pinout & Package

2SJ211(0)-T1B-A is housed in SC-59 (Mini Mold) surface-mount package, measuring 2.9 × 1.5 × 0.95 mm, with gull-wing leads and marking "H18". Thermal resistance θ_JA is not specified in datasheet but typical for SC-59 is ~300 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with 2SJ211(0)-T1B-A, the 2SJ501(0)-T1B-A trades logic-level drivability for higher voltage capability, while the Si2301DS-T1-BE3 sacrifices blocking voltage for ultra-low R_DS(on) - making the 2SJ211(0)-T1B-A uniquely balanced for 5 V-driven 24 V relay/solenoid loads in industrial control.

Availability

2SJ211(0)-T1B-A is available at Aetrix Electronics and suitable for relay driver circuits, solenoid control modules, and DC motor direction control requiring stable component supply and long-term industrial availability.

Supply support for 2SJ211(0)-T1B-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and discrete devices.

The 2SJ211(0)-T1B-A belongs to Renesas' legacy discrete MOSFET product line targeting cost-sensitive, low-power switching applications in industrial and consumer equipment - emphasizing logic-level compatibility and SC-59 footprint efficiency.

FAQ

What is the gate threshold voltage range for the 2SJ211(0)-T1B-A?

The 2SJ211(0)-T1B-A has a gate cut-off voltage V_GS(off) of −1.4 V (min) to −2.4 V (max) at V_DS = −5.0 V and I_D = −1.0 µA. This range ensures reliable turn-off when driven by 0 V logic low and turn-on with standard 5 V CMOS outputs. The 2SJ211(0)-T1B-A's depletion-mode behavior means it conducts at V_GS = 0 V and requires negative gate voltage to shut off.

Can the 2SJ211(0)-T1B-A be used with 3.3 V logic outputs?

The 2SJ211(0)-T1B-A is rated for guaranteed turn-on at V_GS = −4.0 V, so 3.3 V logic cannot provide sufficient negative gate bias for full enhancement. While partial conduction may occur, R_DS(on) will be significantly higher than specified - potentially exceeding 100 Ω. The 2SJ211(0)-T1B-A is therefore not recommended for 3.3 V-only drive without external level shifting.

Does the 2SJ211(0)-T1B-A include built-in body diode functionality?

Yes, the 2SJ211(0)-T1B-A integrates a body diode between source and drain, oriented to conduct from source to drain (anode at drain, cathode at source) - typical for P-channel MOSFETs. This allows freewheeling current in inductive load applications like relay coils, though external flyback diodes are still recommended for robust protection per datasheet guidance.

What is the maximum continuous drain current for the 2SJ211(0)-T1B-A at room temperature?

The 2SJ211(0)-T1B-A specifies a DC drain current I_D(DC) of −200 mA at T_A = 25°C. However, due to its 200 mW power dissipation limit and R_DS(on) ≥ 11 Ω, the practical continuous current is constrained to approximately −14 mA at full R_DS(on) = 30 Ω to stay within thermal limits - confirming its role as a signal- or small-power switch, not a power-stage device.

Is the 2SJ211(0)-T1B-A RoHS compliant?

Yes, the 2SJ211(0)-T1B-A complies with the EU RoHS Directive as confirmed by Renesas Electronics' environmental documentation. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits, and is suitable for use in consumer and industrial electronics requiring RoHS-conformant components.