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Renesas 2SJ214STL-E
- Part No.:
- 2SJ214STL-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SJ214STL-E.pdf
- Description:
- GENERAL SWITCHING POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
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Product details
Overview
2SJ214STL-E from Renesas Electronics (formerly Hitachi) is a silicon P-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drive circuits. It features –60 V VDSS, –10 A continuous drain current, 0.13 Ω typical RDS(on) at VGS = –10 V, 4 V gate threshold compatibility, and LDPAK surface-mount package.
For engineers reviewing the 2SJ214STL-E datasheet, 2SJ214STL-E pinout, 2SJ214STL-E application, or 2SJ214STL-E equivalent, key selection criteria include its low on-resistance at 4 V gate drive, fast switching times (8 ns td(on), 170 ns td(off)), and integrated body diode with 200 ns reverse recovery time for inductive load handling.
Technical Context
This P-channel enhancement-mode MOSFET operates with negative gate-to-source voltage control and supports direct interface with 5 V logic due to its VGS(off) range of –1.0 to –2.0 V and guaranteed turn-on at –4 V. Its LDPAK package provides low thermal resistance and dual-drain terminals for high-current path optimization.
The device integrates a body diode rated for –10 A continuous forward current and 200 ns reverse recovery time under specified di/dt conditions, enabling robust operation in flyback and H-bridge topologies without external freewheeling diodes in many cases.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –60 V - blocks up to 60 V drain-source reverse bias in high-side switch configurations |
| ID (continuous) | –10 A - supports sustained load currents in motor drivers and DC-DC synchronous rectifiers |
| RDS(on) @ VGS = –4 V | 0.18–0.25 Ω - enables efficient 5 V logic-level gate drive without level-shifting circuitry |
| td(off) | 170 ns - limits switching losses during turn-off in PWM frequencies up to ~500 kHz |
| Ciss | 900 pF - determines gate drive strength requirement and influences Miller effect in high-speed switching |
| VGS(off) | –1.0 to –2.0 V - defines gate voltage range for reliable enhancement-mode cutoff and low leakage |
| trr | 200 ns - specifies body diode recovery speed critical for snubberless operation in inductive switching |
Pinout & Package
Package: LDPAK (4-pin surface-mount, dual-drain configuration, exposed drain pad for thermal conduction).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires negative voltage relative to source to turn on; compatible with 5 V logic when referenced to source |
| 2 & 4 | Drain (D) | High-current output node; pins 2 and 4 are internally connected to same drain structure and share thermal path via exposed pad |
| 3 | Source (S) | Reference terminal for gate drive and current return path; connects to positive rail in high-side switch applications |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at –4 V VGS, eliminating need for gate driver ICs in 5 V systems |
| Dual-drain LDPAK package | Reduces PCB trace inductance and improves thermal dissipation via two parallel drain connections |
| Fast body diode | 200 ns trr enables clean commutation in half-bridge and solenoid drive without external diode |
| Low RDS(on) at low VGS | 0.25 Ω max at –4 V ensures <1.25 W conduction loss at –5 A, critical for thermally constrained designs |
Applications
| Motor Drive | DC-DC Converter |
|---|---|
Use Scenario: Driving brushed DC motors in battery-powered tools and automotive accessories. IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor voltage polarity and braking via source-follower configuration. Use Value: Low RDS(on) at –4 V gate drive minimizes heat generation during stall conditions; fast turn-off prevents shoot-through in H-bridge controllers. | Use Scenario: Synchronous rectification in buck converters for industrial power supplies. IC Role / Device Role / Timing Role: Low-side or high-side synchronous FET replacing Schottky diodes to improve efficiency above 3 A load. Use Value: 0.13 Ω typical RDS(on) at –10 V reduces conduction loss by >40% vs. discrete diode solutions at 5 A output. |
| Solenoid Control | Power Switching Module |
Use Scenario: On/off control of 24 V solenoids in HVAC actuators and fluid control valves. IC Role / Device Role / Timing Role: High-side switch managing inductive load current with integrated body diode clamping. Use Value: 200 ns trr and –1.1 V VDF ensure rapid energy recirculation and minimal voltage overshoot during de-energization. | Use Scenario: Compact power distribution modules for programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Protected high-side switch providing overcurrent and thermal shutdown capability via external sensing. Use Value: LDPAK package allows >40 W channel dissipation at TC = 25°C, supporting 10 A continuous loads in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9540NPBF | Higher RDS(on) (0.2 Ω min @ –10 V), TO-220 package, slower td(off) (220 ns) | Requires heatsink mounting; less suitable for high-density SMT layouts | Preferred where through-hole assembly and higher voltage margin (>100 V) are required |
| Si2305DS-T1-E3 | Lower ID (–4.1 A), smaller SOT-23 package, lower Ciss (450 pF) | Limited to sub-3 A loads; insufficient for motor/solenoid peak currents | Optimal for low-power logic-level switching where board space is critical and current < 3 A |
Compared with IRF9540NPBF and Si2305DS-T1-E3, the 2SJ214STL-E uniquely balances 10 A current capability, 4 V logic compatibility, and SMT-ready LDPAK thermal performance-making it optimal for compact, medium-power industrial switching where gate drive simplicity and thermal density matter.
Availability
2SJ214STL-E is available at Aetrix Electronics and suitable for motor drive, DC-DC converter, and solenoid control applications requiring stable component supply across extended production lifecycles.
Supply support for 2SJ214STL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.
The 2SJ214STL-E belongs to Renesas' legacy high-reliability power MOSFET product line, engineered specifically for ruggedized industrial power switching where logic-level drive, fast switching, and thermal resilience are essential.
FAQ
What is the maximum continuous drain current rating for the 2SJ214STL-E?
The 2SJ214STL-E has a maximum continuous drain current (ID) of –10 A at TC = 25°C. This rating assumes proper PCB copper area and thermal management per the LDPAK footprint. Derating applies above 25°C case temperature-e.g., at 100°C TC, the usable ID drops to approximately –5.5 A based on the published power vs. temperature curve.
Can the 2SJ214STL-E be driven directly from a 5 V microcontroller GPIO?
Yes-the 2SJ214STL-E is explicitly characterized as a 4 V gate drive device and can be fully enhanced using –5 V gate-to-source voltage. Its VGS(off) range (–1.0 to –2.0 V) and RDS(on) spec at –4 V confirm reliable operation with standard 5 V logic levels referenced to the source terminal.
Does the 2SJ214STL-E include an integrated body diode, and what are its key parameters?
Yes-the 2SJ214STL-E integrates a body diode with –1.1 V forward voltage (VDF) at –10 A and 200 ns reverse recovery time (trr) under specified di/dt conditions. This diode supports freewheeling in inductive loads and eliminates the need for external diodes in many solenoid and motor drive configurations.
What is the package type and thermal performance of the 2SJ214STL-E?
The 2SJ214STL-E uses the LDPAK surface-mount package-a 4-pin leadless design with dual drain terminals and an exposed drain pad. At TC = 25°C, it delivers 40 W channel dissipation; thermal derating follows a linear slope beyond 25°C, reaching zero dissipation at 150°C channel temperature.
How does the 2SJ214STL-E compare to N-channel alternatives in high-side switching applications?
The 2SJ214STL-E simplifies high-side switching versus N-channel MOSFETs by eliminating the need for bootstrap capacitors or high-side gate drivers. As a P-channel device, it turns on with a simple low-side logic signal referenced to its source, reducing BOM count and layout complexity-especially valuable in space-constrained DC-DC and motor control modules.
2SJ214STL-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SJ214STL-E FAQ
1.How can I place an order for 2SJ214STL-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ214STL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ214STL-E reliable?
The price and inventory of 2SJ214STL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ214STL-E is usually 5 days.
3.What payment methods are accepted for 2SJ214STL-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ214STL-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ214STL-E?
2SJ214STL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ214STL-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ214STL-E?
For technical support, including 2SJ214STL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ214STL-E requirements.
6.How does Aetrix verify that 2SJ214STL-E is sourced from the original manufacturer or authorized distributors?
All 2SJ214STL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ214STL-E meets industry standards.
7.What is the process for return or replacement of 2SJ214STL-E?
All 2SJ214STL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ214STL-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ214STL-E part is unused and in its original packaging.
Return procedure for 2SJ214STL-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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