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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ215-E

Name: 2SJ215-E
Brand: Renesas
SKU: 2SJ215-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ215-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SJ215-E.pdf

Description:: P-CHANNEL MOSFET

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Product details

Overview

2SJ215-E from Renesas Electronics (formerly Hitachi) is a silicon P-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drives, and solenoid control circuits. It features –60 V V_DSS, –35 A continuous drain current, 0.045 Ω R_DS(on) at V_GS = –10 V, and 4 V gate drive compatibility with standard 5 V logic.

For engineers reviewing the 2SJ215-E datasheet, 2SJ215-E pinout, 2SJ215-E application, or 2SJ215-E equivalent, key selection considerations include its low on-resistance at low gate voltage, fast switching times (td(on) = 20 ns), body diode recovery performance (trr = 250 ns), and TO-3P thermal capability for industrial power stages.

Technical Context

This P-channel enhancement-mode MOSFET operates with negative gate-to-source voltage control and integrates a built-in body diode rated for –35 A reverse current and –1.3 V forward drop. Its channel temperature rating of 150°C and 125 W channel dissipation at T_C = 25°C support high-duty-cycle operation in thermally constrained environments.

The device uses planar vertical DMOS structure with optimized charge distribution to achieve low input capacitance (C_iss = 2400 pF) and moderate reverse transfer capacitance (C_rss = 340 pF), enabling stable gate drive under high dv/dt conditions typical in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–60 V - maximum blocking voltage before avalanche conduction
I_D (continuous)	–35 A - continuous drain current at T_C = 25°C with heatsink
R_DS(on)	0.045 Ω - on-state resistance at V_GS = –10 V, enabling <1.5 W conduction loss at 18 A
V_GS(off)	–1.0 to –2.0 V - gate threshold range ensuring reliable turn-on with 4–5 V logic drive
t_r/t_f	175/320 ns - rise/fall times defining minimum switching period in PWM applications
t_rr	250 ns - body diode reverse recovery time critical for synchronous rectifier or freewheeling use
P_ch	125 W - maximum channel power dissipation at case temperature 25°C

Pinout & Package

Package: TO-3P (plastic insulated case with metal flange for heatsinking). Flange is electrically connected to Drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control electrode; accepts –4 V to –20 V relative to source to modulate channel conductivity
2 (D)	Drain (Flange)	Main high-side power output node; flange provides mechanical mounting and thermal path to heatsink
3 (S)	Source	Reference node for gate drive; connects to positive rail in high-side switch configurations

Key Features

Feature	Design Value
4 V gate drive compatibility	Operates fully enhanced with V_GS = –4 V, eliminating need for dedicated negative gate drivers in 5 V systems
Low R_DS(on) at low V_GS	0.07 Ω at V_GS = –4 V enables efficient operation without gate boosting circuitry
Fast switching speed	td(on)/td(off) = 20/460 ns supports >200 kHz PWM in DC-DC converters
Integrated body diode	Rated for –35 A continuous reverse current and 250 ns trr, suitable for freewheeling paths
TO-3P thermal package	θ_ch–c = 1.0°C/W allows 125 W dissipation with modest heatsinking at T_C = 25°C

Applications

Brushed DC Motor Drive	High-Side Power Switch
Use Scenario: Controlling direction and speed of 24–48 V brushed DC motors in industrial actuators and robotics. IC Role / Device Role / Timing Role: High-side P-channel switch replacing mechanical relay or N-channel + level shifter topology. Use Value: Eliminates external level-shifting circuitry due to 4 V gate drive compatibility and supports bidirectional current flow via integrated body diode.	Use Scenario: Enabling/disabling main power rails in programmable power supplies and battery management systems. IC Role / Device Role / Timing Role: Low-loss, logic-level-controlled high-side switch with fast turn-off for fault isolation. Use Value: 0.045 Ω R_DS(on) limits voltage drop to <0.8 V at 18 A, reducing thermal load and improving system efficiency.
DC-DC Buck Converter	Solenoid Driver
Use Scenario: Synchronous rectification or high-side switching in non-isolated buck regulators delivering up to 30 A. IC Role / Device Role / Timing Role: Main switching element handling high peak currents and fast voltage transitions. Use Value: 250 ns body diode trr and 340 pF Crss minimize switching losses and EMI during dead-time transitions.	Use Scenario: Driving 12–24 V solenoids in automotive valve control and industrial pneumatic systems. IC Role / Device Role / Timing Role: Pulse-width-modulated current source with controlled turn-on/turn-off to reduce coil heating and acoustic noise. Use Value: 460 ns td(off) and 320 ns tf enable precise current shaping and rapid de-energization without flyback voltage spikes exceeding –60 V.

Brushed DC Motor Drive

High-Side Power Switch

Use Scenario: Controlling direction and speed of 24–48 V brushed DC motors in industrial actuators and robotics.

IC Role / Device Role / Timing Role: High-side P-channel switch replacing mechanical relay or N-channel + level shifter topology.

Use Value: Eliminates external level-shifting circuitry due to 4 V gate drive compatibility and supports bidirectional current flow via integrated body diode.

Use Scenario: Enabling/disabling main power rails in programmable power supplies and battery management systems.

IC Role / Device Role / Timing Role: Low-loss, logic-level-controlled high-side switch with fast turn-off for fault isolation.

Use Value: 0.045 Ω R_DS(on) limits voltage drop to <0.8 V at 18 A, reducing thermal load and improving system efficiency.

DC-DC Buck Converter

Solenoid Driver

Use Scenario: Synchronous rectification or high-side switching in non-isolated buck regulators delivering up to 30 A.

IC Role / Device Role / Timing Role: Main switching element handling high peak currents and fast voltage transitions.

Use Value: 250 ns body diode trr and 340 pF Crss minimize switching losses and EMI during dead-time transitions.

Use Scenario: Driving 12–24 V solenoids in automotive valve control and industrial pneumatic systems.

IC Role / Device Role / Timing Role: Pulse-width-modulated current source with controlled turn-on/turn-off to reduce coil heating and acoustic noise.

Use Value: 460 ns td(off) and 320 ns tf enable precise current shaping and rapid de-energization without flyback voltage spikes exceeding –60 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	V_DSS = –100 V, R_DS(on) = 0.2 Ω @ V_GS = –10 V, slower switching (td(off) = 1.1 µs)	Better voltage margin but higher conduction loss; less suitable for high-frequency DC-DC	Choose when higher blocking voltage is required and switching frequency <50 kHz
STP12PF06	V_DSS = –60 V, R_DS(on) = 0.12 Ω @ V_GS = –10 V, TO-220 package, no flange thermal path	Same voltage rating but lower current capability (12 A) and inferior thermal performance	Acceptable for lower-power (<10 A), space-constrained designs where TO-3P mounting is impractical

Compared with IRF9540NPBF and STP12PF06, the 2SJ215-E delivers superior combination of low R_DS(on), fast switching, and robust TO-3P thermal design-making it optimal for high-current, high-efficiency, medium-frequency power switching where gate drive simplicity and thermal reliability are critical.

Availability

2SJ215-E is available at Aetrix Electronics and suitable for brushed DC motor drive, high-side power switching, and DC-DC converter applications requiring stable component supply and long-term industrial availability.

Supply support for 2SJ215-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed from the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and SoC solutions.

The 2SJ215-E belongs to Hitachi's legacy discrete power MOSFET product line, engineered specifically for high-reliability industrial power switching where gate drive simplicity, thermal robustness, and fast transient response are essential.

FAQ

What is the maximum continuous drain current rating for the 2SJ215-E?

The 2SJ215-E is rated for –35 A continuous drain current at case temperature T_C = 25°C with adequate heatsinking. Derating applies above 25°C per the published power vs. temperature curve, reaching zero allowable current at 150°C channel temperature. This rating assumes proper PCB copper area or external heatsink to maintain T_C ≤ 25°C under full load.

Can the 2SJ215-E be driven directly from a 5 V microcontroller GPIO?

Yes, the 2SJ215-E can be driven directly from a 5 V microcontroller GPIO when used in high-side configuration. Its V_GS(off) range of –1.0 to –2.0 V and guaranteed R_DS(on) of 0.07 Ω at V_GS = –4 V allow full enhancement with simple level translation-no charge pump or negative supply needed. Ensure gate resistor limits peak current during switching.

Does the 2SJ215-E include an integrated body diode, and what are its specifications?

Yes, the 2SJ215-E includes a monolithic body diode between source and drain. It is rated for –35 A continuous reverse current, –1.3 V forward voltage at –35 A, and 250 ns reverse recovery time (trr) under specified test conditions (di/dt = 50 A/µs, V_GS = 0). This diode supports freewheeling and synchronous rectification roles without external components.

What is the thermal resistance from channel to case (θ_ch–c) for the 2SJ215-E?

According to the datasheet, the 2SJ215-E has a channel-to-case thermal resistance (θ_ch–c) of 1.0°C/W at T_C = 25°C. This value is measured with the flange mounted to a large heatsink and defines the upper limit of steady-state power dissipation-125 W at T_C = 25°C. Transient thermal impedance curves are provided for pulsed operation analysis.

Is the 2SJ215-E suitable for use in automotive applications?

The 2SJ215-E was not qualified to AEC-Q101 or automotive-grade reliability standards. While its –60 V V_DSS, 150°C T_ch, and robust construction make it technically capable in some 12 V/24 V automotive subsystems, Renesas does not authorize its use in safety-critical or mission-critical automotive functions without additional qualification. For automotive designs, consult Renesas' official automotive MOSFET portfolio.

2SJ215-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SJ215-E FAQ

1.How can I place an order for 2SJ215-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ215-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ215-E reliable?

The price and inventory of 2SJ215-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ215-E is usually 5 days.

3.What payment methods are accepted for 2SJ215-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ215-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ215-E?

2SJ215-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ215-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ215-E?

For technical support, including 2SJ215-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ215-E requirements.

6.How does Aetrix verify that 2SJ215-E is sourced from the original manufacturer or authorized distributors?

All 2SJ215-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ215-E meets industry standards.

7.What is the process for return or replacement of 2SJ215-E?

All 2SJ215-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ215-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ215-E part is unused and in its original packaging.

Return procedure for 2SJ215-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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