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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ216-E

Name: 2SJ216-E
Brand: Renesas
SKU: 2SJ216-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ216-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SJ216-E.pdf

Description:: P-CHANNEL SMALL SIGNAL MOSFET

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Product details

Overview

2SJ216-E from Renesas Electronics (formerly Hitachi) is a silicon P-channel enhancement-mode MOSFET designed for high-speed power switching in DC-DC converters, motor drives, and solenoid control. It features –60 V V_DSS, –35 A I_D, 0.045 Ω R_DS(on) at V_GS = –10 V, 4 V gate threshold compatibility, and TO-3PFM package with isolated heatsink mounting.

For engineers reviewing the 2SJ216-E datasheet, 2SJ216-E pinout, 2SJ216-E application, or 2SJ216-E equivalent, key selection criteria include its low drive current requirement, body diode recovery time of 250 ns, –1.0 to –2.0 V V_GS(off), and suitability for 5 V logic-driven high-side switching in industrial power stages.

Technical Context

This P-channel MOSFET operates as a high-side switch with gate-controlled channel inversion, enabling direct interface with 5 V microcontroller outputs without level-shifting. Its –60 V blocking capability and –35 A continuous drain current support robust operation in 48 V DC systems under pulse loads up to –140 A.

The device integrates a fast-recovery body diode (t_rr = 250 ns, V_DF = –1.3 V at –35 A), optimized for synchronous rectification and flyback energy recirculation in buck/boost topologies. Thermal resistance θ_ch–c is 2.5°C/W, supporting 50 W channel dissipation at T_C = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–60 V - supports 48 V nominal bus systems with 25% safety margin
I_D (continuous)	–35 A - enables ≥200 W conduction in TO-3PFM with external heatsink
R_DS(on)	0.045 Ω max at V_GS = –10 V - yields ≤28 W conduction loss at –35 A
V_GS(off)	–1.0 to –2.0 V - ensures reliable turn-off with 5 V logic high referenced to source
t_rr	250 ns - minimizes switching losses during inductive load commutation
Q_g (derived)	~75 nC (from C_iss/C_rss) - compatible with standard gate drivers at ≤500 kHz
P_ch	50 W at T_C = 25°C - requires thermal design for case temperature derating above 25°C

Pinout & Package

Package: TO-3PFM - metal-can package with insulated tab, designed for direct heatsink mounting and high-power thermal management. Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S). Drain is internally connected to the metal case.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate terminal	Controls channel conduction; requires –4 V to –10 V relative to source for full enhancement
2 (D)	Drain terminal	High-side power input node; electrically tied to metal case and must be isolated from heatsink
3 (S)	Source terminal	Reference node for gate drive; connects to load return or system ground in high-side configuration

Key Features

Feature	Design Value
Low R_DS(on)	0.045 Ω at –10 V gate drive - reduces conduction loss by >35% vs. comparable –60 V P-FETs
4 V gate drive compatibility	Full enhancement achievable with 5 V logic - eliminates need for gate driver IC in many MCU-integrated designs
Fast body diode recovery	t_rr = 250 ns - enables efficient operation in hard-switched DC-DC converters without snubbers
TO-3PFM thermal performance	θ_ch–c = 2.5°C/W - delivers 50 W dissipation at 25°C case temperature, scalable with heatsink

Applications

Motor Drive Stage	DC-DC Synchronous Rectifier
Use Scenario: Bidirectional 24–48 V brushed DC motor control with regenerative braking. IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch controlling motor voltage polarity and enabling freewheeling via integrated body diode. Use Value: Low R_DS(on) and fast t_rr reduce heat generation during PWM commutation and improve efficiency in 10–50 kHz drive frequencies.	Use Scenario: Secondary-side synchronous rectification in isolated 48 V input DC-DC converters. IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to minimize forward drop and reverse recovery loss. Use Value: –1.3 V V_DF and 250 ns t_rr cut conduction and switching losses by ~40% versus 40 V Schottky alternatives.
High-Side Power Switch	Solenoid Driver
Use Scenario: 5 V microcontroller-controlled 48 V load switch for industrial I/O modules. IC Role / Device Role / Timing Role: Logic-level-compatible high-side switch enabling direct GPIO drive without level shifters. Use Value: –1.5 V typical V_GS(off) ensures clean turn-off with 5 V logic high, eliminating shoot-through risk in multi-FET systems.	Use Scenario: 24 V solenoid actuation with controlled turn-on/turn-off timing in valve control systems. IC Role / Device Role / Timing Role: Fast-switching power stage delivering precise current pulses with minimal dwell-time delay. Use Value: 20 ns t_d(on) and 175 ns t_r enable sub-100 µs solenoid energization control, improving response accuracy.

Motor Drive Stage

DC-DC Synchronous Rectifier

Use Scenario: Bidirectional 24–48 V brushed DC motor control with regenerative braking.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET switch controlling motor voltage polarity and enabling freewheeling via integrated body diode.

Use Value: Low R_DS(on) and fast t_rr reduce heat generation during PWM commutation and improve efficiency in 10–50 kHz drive frequencies.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V input DC-DC converters.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode to minimize forward drop and reverse recovery loss.

Use Value: –1.3 V V_DF and 250 ns t_rr cut conduction and switching losses by ~40% versus 40 V Schottky alternatives.

High-Side Power Switch

Solenoid Driver

Use Scenario: 5 V microcontroller-controlled 48 V load switch for industrial I/O modules.

IC Role / Device Role / Timing Role: Logic-level-compatible high-side switch enabling direct GPIO drive without level shifters.

Use Value: –1.5 V typical V_GS(off) ensures clean turn-off with 5 V logic high, eliminating shoot-through risk in multi-FET systems.

Use Scenario: 24 V solenoid actuation with controlled turn-on/turn-off timing in valve control systems.

IC Role / Device Role / Timing Role: Fast-switching power stage delivering precise current pulses with minimal dwell-time delay.

Use Value: 20 ns t_d(on) and 175 ns t_r enable sub-100 µs solenoid energization control, improving response accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP10P60P	–60 V V_DSS, –10 A I_D, 0.35 Ω R_DS(on), TO-220 package	Lower current rating and higher on-resistance - suitable only for ≤100 W loads	Choose when board space constraints preclude TO-3PFM and thermal budget allows higher R_DS(on).
IRF9540NPBF	–100 V V_DSS, –19 A I_D, 0.2 Ω R_DS(on), TO-220 package	Higher voltage rating but lower current and slower t_rr (400 ns) - less efficient in 48 V motor drive	Prefer where overvoltage margin >40% is required and gate drive is –10 V only.

Compared with IXTP10P60P and IRF9540NPBF, the 2SJ216-E delivers superior power density (–35 A in TO-3PFM), lower conduction loss, and faster body diode recovery-making it optimal for thermally constrained, high-current 48 V industrial switching where TO-3PFM mounting is feasible.

Availability

2SJ216-E is available at Aetrix Electronics and suitable for motor drive, DC-DC converter, and solenoid driver applications requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEM production.

Supply support for 2SJ216-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The 2SJ216-E belongs to Hitachi's legacy high-power P-channel MOSFET product line, engineered specifically for ruggedized high-side switching in industrial power conversion and electromechanical actuation systems.

FAQ

What is the maximum continuous drain current rating for the 2SJ216-E?

The 2SJ216-E has a maximum continuous drain current (I_D) of –35 A at T_C = 25°C. This rating assumes proper heatsinking and derates linearly above 25°C case temperature per the published power vs. temperature curve. At T_C = 100°C, usable I_D drops to approximately –20 A. Always verify thermal design using the 2.5°C/W θ_ch–c value and actual ambient conditions in your 2SJ216-E implementation.

Can the 2SJ216-E be driven directly from a 5 V microcontroller GPIO?

Yes, the 2SJ216-E is explicitly characterized as a "4 V gate drive device" and can be fully enhanced with V_GS = –4 V, making it compatible with standard 5 V logic outputs referenced to its source. Its V_GS(off) range of –1.0 to –2.0 V ensures reliable turn-off when the GPIO is high (5 V), provided the source is at system ground or a defined reference potential. This eliminates external level-shifting circuitry in many 2SJ216-E high-side switch designs.

What is the body diode reverse recovery time (t_rr) of the 2SJ216-E and why does it matter?

The 2SJ216-E body diode has a reverse recovery time (t_rr) of 250 ns under specified test conditions (I_F = –35 A, di_F/dt = 50 A/µs). This parameter critically impacts switching losses in inductive applications like motor drives and DC-DC converters. A shorter t_rr reduces diode tail current and associated power dissipation during turn-off transitions, directly improving system efficiency and thermal performance in the 2SJ216-E's target applications.

Is the 2SJ216-E pin-compatible with other TO-3PFM MOSFETs such as the 2SK215?

No, the 2SJ216-E is not pin-compatible with the 2SK215. While both use the TO-3PFM package, the 2SK215 is an N-channel device with Gate-Drain-Source pinout (1-G, 2-D, 3-S), whereas the 2SJ216-E is P-channel with identical physical pin numbering (1-G, 2-D, 3-S) but opposite polarity and voltage referencing. PCB layout must account for high-side vs. low-side topology differences, and gate drive polarity must be inverted-so direct substitution is not electrically safe without circuit redesign.

Does the 2SJ216-E have avalanche capability rated in the datasheet?

No, the 2SJ216-E datasheet does not specify rated single-pulse or repetitive avalanche energy (E_AS). The Absolute Maximum Ratings table defines only steady-state limits (V_DSS, I_D, P_ch) and transient peak current (I_D(pulse)). Designers must avoid operation in avalanche breakdown regions and implement appropriate clamping, snubbing, or layout practices to limit V_DS transients. For applications requiring guaranteed avalanche ruggedness, consult Renesas' newer automotive-grade P-channel MOSFETs instead of relying on the 2SJ216-E.

2SJ216-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SJ216-E FAQ

1.How can I place an order for 2SJ216-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ216-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ216-E reliable?

The price and inventory of 2SJ216-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ216-E is usually 5 days.

3.What payment methods are accepted for 2SJ216-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ216-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ216-E?

2SJ216-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ216-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ216-E?

For technical support, including 2SJ216-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ216-E requirements.

6.How does Aetrix verify that 2SJ216-E is sourced from the original manufacturer or authorized distributors?

All 2SJ216-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ216-E meets industry standards.

7.What is the process for return or replacement of 2SJ216-E?

All 2SJ216-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ216-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ216-E part is unused and in its original packaging.

Return procedure for 2SJ216-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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