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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SJ245L-E

Name: 2SJ245L-E
Brand: Renesas
SKU: 2SJ245L-E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SJ245L-E

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SJ245L-E.pdf

Description:: P-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2SJ245L-E from Renesas Electronics (formerly Hitachi) is a silicon P-channel enhancement-mode MOSFET designed for high-speed power switching in DC-DC converters and switching regulators. It features –60 V V_DSS, –5 A continuous drain current, 0.25 Ω R_DS(on) at V_GS = –10 V, 4 V gate threshold compatibility with 5 V logic, and 20 W channel dissipation at T_C = 25°C.

For engineers reviewing the 2SJ245L-E datasheet, 2SJ245L-E pinout, 2SJ245L-E application, or 2SJ245L-E equivalent, key selection criteria include its low on-resistance at low gate drive, fast switching times (td(on) = 12 ns, tf = 90 ns), body diode recovery performance (trr = 160 ns), and DPAK-1 package thermal capability for compact power stage layouts.

Technical Context

This P-channel MOSFET operates as a high-side switch in non-synchronous buck and flyback topologies. Its –2.0 V maximum V_GS(off) ensures reliable turn-off with standard 5 V microcontroller outputs, while the 0.28 Ω R_DS(on) at V_GS = –4 V enables efficient operation without level-shifting circuitry.

The device integrates a built-in body diode with –1.1 V forward voltage at –5 A and 160 ns reverse recovery time, supporting freewheeling paths in inductive switching applications. Its C_iss = 610 pF and C_rss = 95 pF support stable gate drive design with minimal Miller-induced oscillation risk.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	–60 V - supports input rails up to 48 V DC-DC systems with margin
I_D (continuous)	–5 A - handles typical mid-power converter output stages
R_DS(on) @ V_GS = –10 V	0.25 Ω - delivers ≤0.625 W conduction loss at 5 A
R_DS(on) @ V_GS = –4 V	0.38 Ω - enables direct 5 V MCU gate drive without boost
t_r/t_f	45 ns / 90 ns - supports >1 MHz switching in optimized layouts
trr	160 ns - limits diode recovery losses in hard-switched topologies
P_ch @ T_C = 25°C	20 W - allows 2.5× derating to 8 W at 100°C case temperature

Pinout & Package

2SJ245L-E uses the surface-mount DPAK-1 (TO-252-1) package with exposed drain pad for thermal management. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (common drain connection between pins 2 and 4).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts –4 V to –20 V drive for full enhancement
2 (D)	Drain	Main high-side power path; electrically tied to pin 4
3 (S)	Source	Reference node for gate drive; connects to input rail in high-side config
4 (D)	Drain (redundant)	Secondary drain connection; improves current sharing and thermal spreading

Key Features

Feature	Design Value
Low R_DS(on) at 4 V drive	0.38 Ω enables direct interface with 5 V logic without gate driver ICs
Fast switching speed	12 ns turn-on delay + 90 ns fall time supports >1 MHz operation
Integrated body diode	–1.1 V V_DF at –5 A and 160 ns trr reduces external component count
Thermally robust package	DPAK-1 with exposed drain pad achieves θ_JC = 6.25 °C/W

Applications

DC-DC Buck Converter	Non-Synchronous Flyback PSU
Use Scenario: Step-down conversion from 24–48 V input to 3.3–12 V output in industrial power supplies. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling energy transfer into output inductor. Use Value: 0.38 Ω R_DS(on) at 5 V drive minimizes conduction loss without auxiliary gate bias circuitry.	Use Scenario: Isolated AC/DC adapter with primary-side regulation and no secondary-side sync controller. IC Role / Device Role / Timing Role: Primary-side power switch turning on/off transformer primary winding during each switching cycle. Use Value: 160 ns body diode trr ensures clean demagnetization and reduces voltage spikes across transformer.
Switching Regulator Control	Motor Drive Half-Bridge
Use Scenario: Point-of-load regulator in programmable logic controller (PLC) backplane modules. IC Role / Device Role / Timing Role: Main pass element in adjustable step-down regulator using external PWM controller. Use Value: –60 V V_DSS accommodates 48 V nominal bus with transient margin per IEC 61000-4-5.	Use Scenario: Low-voltage (<24 V) brushed DC motor control in HVAC actuators and valve drivers. IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving motor phase to supply rail. Use Value: Fast 45 ns rise time enables precise PWM duty-cycle control down to 1% resolution.

DC-DC Buck Converter

Non-Synchronous Flyback PSU

Use Scenario: Step-down conversion from 24–48 V input to 3.3–12 V output in industrial power supplies.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch controlling energy transfer into output inductor.

Use Value: 0.38 Ω R_DS(on) at 5 V drive minimizes conduction loss without auxiliary gate bias circuitry.

Use Scenario: Isolated AC/DC adapter with primary-side regulation and no secondary-side sync controller.

IC Role / Device Role / Timing Role: Primary-side power switch turning on/off transformer primary winding during each switching cycle.

Use Value: 160 ns body diode trr ensures clean demagnetization and reduces voltage spikes across transformer.

Switching Regulator Control

Motor Drive Half-Bridge

Use Scenario: Point-of-load regulator in programmable logic controller (PLC) backplane modules.

IC Role / Device Role / Timing Role: Main pass element in adjustable step-down regulator using external PWM controller.

Use Value: –60 V V_DSS accommodates 48 V nominal bus with transient margin per IEC 61000-4-5.

Use Scenario: Low-voltage (<24 V) brushed DC motor control in HVAC actuators and valve drivers.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving motor phase to supply rail.

Use Value: Fast 45 ns rise time enables precise PWM duty-cycle control down to 1% resolution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPBF	Higher R_DS(on) (0.2 Ω @ –10 V but 0.55 Ω @ –5 V); TO-220 package; slower tr = 120 ns	Requires heatsink in same power class; unsuitable for space-constrained SMT designs	Select when through-hole mounting and higher voltage margin (–100 V) are prioritized over size and speed
Si2305DS-T1-E3	Lower voltage rating (–30 V); smaller SOT-23 package; R_DS(on) = 0.055 Ω @ –4.5 V but only rated for –4.1 A	Limited to sub-10 W loads; not suitable for 48 V input systems	Select for ultra-compact low-power applications where board area is critical and voltage stress is <30 V

Compared with IRF9540NPBF and Si2305DS-T1-E3, the 2SJ245L-E uniquely balances –60 V rating, DPAK-1 SMT footprint, 0.38 Ω on-resistance at 5 V drive, and 160 ns body diode recovery-making it optimal for mid-power, space-constrained, high-efficiency DC-DC stages.

Availability

2SJ245L-E is available at Aetrix Electronics and suitable for DC-DC converters, switching regulators, and motor drive half-bridges requiring stable component supply and long-term industrial availability.

Supply support for 2SJ245L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT applications.

The 2SJ245L-E belongs to Renesas' legacy power MOSFET product line, originally developed by Hitachi for high-reliability, high-speed switching in industrial power conversion systems.

FAQ

What is the gate threshold voltage range for the 2SJ245L-E?

The 2SJ245L-E has a gate-to-source cutoff voltage (V_GS(off)) ranging from –1.0 V to –2.0 V, measured at I_D = –1 mA and V_DS = –10 V. This ensures full turn-on with standard 5 V logic-level signals and provides noise immunity against false triggering in noisy industrial environments. The 2SJ245L-E reliably conducts at V_GS ≤ –2.0 V and remains fully off above –1.0 V under typical operating conditions.

Can the 2SJ245L-E be used with 3.3 V microcontroller GPIOs?

No-the 2SJ245L-E requires a minimum of –4 V gate drive to achieve specified R_DS(on) (0.38 Ω), and its V_GS(off) upper limit is –1.0 V. A 3.3 V MCU output cannot produce sufficient negative gate-source potential; level-shifting or gate driver circuitry is required. The 2SJ245L-E is optimized for 5 V logic interfaces, not 3.3 V systems.

What is the maximum continuous drain current for the 2SJ245L-E at 100°C case temperature?

At T_C = 100°C, the 2SJ245L-E's channel dissipation derates to approximately 8 W (from 20 W at 25°C), limiting continuous drain current to about –3.2 A assuming 0.25 Ω R_DS(on). This value is derived from the published power vs. temperature derating curve and must be validated with actual PCB thermal design. The 2SJ245L-E datasheet specifies –5 A only at T_C = 25°C.

Does the 2SJ245L-E have avalanche rating information in its datasheet?

No-avalanche energy rating (E_AS) is not specified in the official 2SJ245L-E datasheet. The device is characterized for repetitive unclamped inductive switching only within its Safe Operating Area (SOA) limits. Designers must ensure voltage transients remain within the –60 V V_DSS rating using snubbers or clamping circuits, as the 2SJ245L-E lacks guaranteed avalanche ruggedness.

How does the body diode performance of the 2SJ245L-E compare to Schottky alternatives?

The 2SJ245L-E body diode has V_DF = –1.1 V at –5 A and t_rr = 160 ns-higher forward drop and slower recovery than discrete Schottky diodes (e.g., ~0.45 V, <10 ns). However, it eliminates external component count and layout area. For high-frequency, low-loss designs, a Schottky parallel diode may be added-but the 2SJ245L-E's integrated diode suffices for ≤500 kHz flyback or buck applications where efficiency trade-offs are acceptable.

2SJ245L-E Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SJ245L-E FAQ

1.How can I place an order for 2SJ245L-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ245L-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ245L-E reliable?

The price and inventory of 2SJ245L-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ245L-E is usually 5 days.

3.What payment methods are accepted for 2SJ245L-E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ245L-E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ245L-E?

2SJ245L-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ245L-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ245L-E?

For technical support, including 2SJ245L-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ245L-E requirements.

6.How does Aetrix verify that 2SJ245L-E is sourced from the original manufacturer or authorized distributors?

All 2SJ245L-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ245L-E meets industry standards.

7.What is the process for return or replacement of 2SJ245L-E?

All 2SJ245L-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ245L-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ245L-E part is unused and in its original packaging.

Return procedure for 2SJ245L-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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