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Renesas 2SJ279S-E
- Part No.:
- 2SJ279S-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SJ279S-E.pdf
- Description:
- P-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,958
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Product details
Overview
2SJ279S-E from Renesas Electronics is a silicon P-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drivers, and load-switching circuits. It features –60 V VDSS, 0.23 Ω RDS(on) at VGS = –4 V, –5 A continuous ID, avalanche energy rating of 2.1 mJ, and DPAK(S) surface-mount package.
For engineers reviewing the 2SJ279S-E datasheet, 2SJ279S-E pinout, 2SJ279S-E application, or 2SJ279S-E equivalent, key selection criteria include low-voltage gate drive capability (–4 V), guaranteed avalanche ruggedness, fast switching (td(off) = 125 ns), and thermal performance under pulsed load conditions.
Technical Context
This P-channel enhancement-mode MOSFET operates with negative gate-to-source voltage control and integrates an intrinsic body diode rated for –5 A forward current and 140 ns reverse recovery time. Its gate threshold voltage range of –1.0 V to –2.25 V enables reliable turn-on with logic-level compatible drivers.
The device uses a planar vertical DMOS structure optimized for low RDS(on) and high repetitive avalanche endurance. Thermal derating follows a normalized transient impedance curve with θch–c = 6.25 °C/W at DC, supporting stable operation up to Tch = 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –60 V - maximum blocking voltage before avalanche breakdown |
| RDS(on) @ VGS = –4 V | 0.23 Ω max - ensures <1.2 W conduction loss at –3 A continuous current |
| ID (continuous) | –5 A - rated drain current at Tc = 25 °C with heatsink |
| EAR | 2.1 mJ - single-pulse avalanche energy at Tch = 25 °C, Rg ≥ 50 Ω |
| td(off) | 125 ns typ - critical for minimizing switching losses in 100–500 kHz SMPS designs |
| Ciss | 690 pF - input capacitance affecting gate drive strength and EMI behavior |
| VGS(th) | –1.0 to –2.25 V - enables direct interface with –3.3 V or –5 V logic controllers |
| Tch max | 150 °C - channel temperature limit defining safe operating area boundaries |
Pinout & Package
DPAK(S) package (JEITA SC-63, Renesas code DPAK(S)), 3-pin surface-mount outline with exposed drain pad for thermal dissipation. Mass: 0.28 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires –4 V minimum for full enhancement; gate charge Qg ≈ 20 nC |
| 2 (D) | Drain | Main high-side switching node; electrically connected to exposed tab for thermal path |
| 3 (S) | Source | Reference node for gate drive; connects to system ground or floating rail in high-side configuration |
| 4 (D) | Drain (Tab) | Thermal and electrical extension of pin 2; must be soldered to PCB copper pour for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Low-voltage gate drive | Operates fully enhanced at VGS = –4 V, enabling direct use with standard microcontroller GPIOs |
| Guaranteed avalanche capability | Rated for 2.1 mJ single-pulse avalanche energy, supporting robust overvoltage protection without external snubbers |
| Fast switching speed | 125 ns turn-off delay + 75 ns fall time enables efficient operation up to 500 kHz in hard-switched topologies |
| Body diode with fast recovery | 140 ns trr and –1.2 V VDF at –5 A support synchronous rectification and freewheeling in buck/bridge stages |
| Thermally optimized DPAK(S) | Exposed drain tab provides low thermal resistance path (θch–c = 6.25 °C/W) for high-power density board layouts |
Applications
| DC-DC Buck Converter | High-Side Load Switch |
|---|---|
Use Scenario: Step-down regulation from 48 V bus to 12 V for industrial PLC I/O modules. IC Role / Device Role / Timing Role: Synchronous high-side switch in integrated buck controller stage, operating at 250 kHz. Use Value: Low RDS(on) at –4 V gate drive reduces conduction loss by >35% vs. legacy –10 V gate devices, improving efficiency at light loads. | Use Scenario: Controlled power-up sequencing for FPGA core voltage rails in telecom baseband cards. IC Role / Device Role / Timing Role: High-side power switch enabling soft-start via gate resistor network and controlled slew rate. Use Value: Guaranteed avalanche rating eliminates need for external TVS clamping during hot-swap transients, simplifying BOM. |
| Brushed DC Motor Driver | Reverse Polarity Protection |
Use Scenario: H-bridge half-bridge leg in 24 V automotive seat actuator with PWM duty cycling. IC Role / Device Role / Timing Role: Low-side switch complementing N-channel high-side; body diode handles freewheeling current. Use Value: 140 ns trr minimizes shoot-through risk and reduces switching losses during 20 kHz PWM commutation. | Use Scenario: Input protection for 12 V automotive infotainment head unit against battery reversal. IC Role / Device Role / Timing Role: P-channel MOSFET placed in series with positive supply rail, conducting only when polarity is correct. Use Value: –2.25 V maximum VGS(th) ensures reliable turn-on even with aged battery voltage down to 10.5 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RQ3E060AT | RDS(on) = 0.19 Ω @ –4.5 V; higher Ciss (900 pF); no avalanche rating specified | Better conduction loss at higher gate voltage; lacks avalanche stress validation for unclamped inductive loads | Select if gate drive is –4.5 V or higher and avalanche immunity is not required |
| ON Semiconductor NTMFS4C09N | RDS(on) = 0.22 Ω @ –4.5 V; SO-8FL package; 100% UIS tested but no published EAR value | Smaller footprint; lower thermal mass limits peak pulse handling vs. DPAK(S) tab | Select for space-constrained boards where 2.1 mJ avalanche margin is secondary to size |
Compared with ROHM RQ3E060AT and ON Semi NTMFS4C09N, the 2SJ279S-E offers uniquely validated avalanche energy (2.1 mJ), DPAK(S) thermal performance, and –4 V drive compatibility - making it preferred for ruggedized 24–48 V industrial power stages where reliability under fault conditions is critical.
Availability
2SJ279S-E is available at Aetrix Electronics and suitable for industrial motor drives, automotive body electronics, DC-DC converter design, and high-reliability power distribution systems requiring stable component supply across extended product lifecycles.
Supply support for 2SJ279S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power management, and discrete power devices for industrial, automotive, and infrastructure markets.
The 2SJ279S-E belongs to Renesas' legacy silicon P-channel MOSFET family engineered for high-reliability, medium-voltage power switching with emphasis on avalanche ruggedness and low-threshold gate drive in compact surface-mount packages.
FAQ
What is the maximum gate-to-source voltage rating for the 2SJ279S-E?
The 2SJ279S-E has a ±20 V VGSS absolute maximum rating. This means the gate can tolerate up to +20 V or –20 V relative to the source without damage. In normal operation, gate drive should remain within –20 V to 0 V for P-channel enhancement mode behavior. Exceeding this rating risks permanent gate oxide breakdown.
Does the 2SJ279S-E have a specified avalanche current rating?
Yes, the 2SJ279S-E specifies IAP = –5 A as the maximum repetitive avalanche current under test conditions (Tch = 25 °C, Rg ≥ 50 Ω). This rating supports design of unclamped inductive switching circuits where energy must be safely absorbed within the MOSFET's silicon.
Can the 2SJ279S-E be used in a high-side switch configuration with 12 V supply?
Yes, the 2SJ279S-E is well-suited for high-side switching with a 12 V rail. Its VGS(th) range (–1.0 V to –2.25 V) ensures full enhancement when the source is at 12 V and the gate is pulled to ground, resulting in VGS ≈ –12 V - well above the turn-on threshold and within safe VGS limits.
What is the thermal resistance from channel to case for the 2SJ279S-E?
The 2SJ279S-E has a channel-to-case thermal resistance (θch–c) of 6.25 °C/W under DC conditions at Tc = 25 °C. This value assumes proper soldering of the exposed drain tab to a minimum 100 mm² copper pour, and is critical for calculating junction temperature rise in thermally constrained layouts.
Is the body diode of the 2SJ279S-E suitable for synchronous rectification?
No - the 2SJ279S-E body diode is not optimized for synchronous rectification. With VDF = –1.2 V at –5 A and trr = 140 ns, it exhibits relatively high forward voltage and moderate recovery speed. For synchronous rectification, a dedicated low-VF, fast-recovery Schottky or optimized trench MOSFET is recommended instead of relying on the intrinsic body diode.
2SJ279S-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SJ279S-E FAQ
1.How can I place an order for 2SJ279S-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ279S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ279S-E reliable?
The price and inventory of 2SJ279S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ279S-E is usually 5 days.
3.What payment methods are accepted for 2SJ279S-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ279S-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ279S-E?
2SJ279S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ279S-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ279S-E?
For technical support, including 2SJ279S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ279S-E requirements.
6.How does Aetrix verify that 2SJ279S-E is sourced from the original manufacturer or authorized distributors?
All 2SJ279S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ279S-E meets industry standards.
7.What is the process for return or replacement of 2SJ279S-E?
All 2SJ279S-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ279S-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ279S-E part is unused and in its original packaging.
Return procedure for 2SJ279S-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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