Renesas 2SJ302-Z-AZ

Overview

2SJ302-Z-AZ from Renesas Electronics is a P-channel enhancement-mode vertical DMOS power MOSFET designed for high-speed switching in DC-DC converters and motor drivers. It features V_DSS = −60 V, R_DS(on) = 0.28 Ω (max) at V_GS = −10 V, I_D = −4.0 A continuous drain current, and TO-220AB package with isolated tab. It is used in low-side switching applications requiring fast turn-off and low conduction loss.

For engineers reviewing the 2SJ302-Z-AZ datasheet, 2SJ302-Z-AZ pinout, 2SJ302-Z-AZ application, or 2SJ302-Z-AZ equivalent, key selection considerations include gate threshold voltage consistency, safe operating area under pulse conditions, thermal resistance from junction-to-case, and avalanche ruggedness rating for inductive load handling.

Technical Context

The 2SJ302-Z-AZ employs a planar vertical DMOS structure optimized for low gate charge (Q_g = 12 nC typ) and reduced Miller capacitance (C_rss = 35 pF typ), enabling efficient high-frequency operation up to 100 kHz in hard-switched topologies. Its body diode exhibits t_rr = 120 ns (typ) and Q_rr = 35 nC (typ), supporting moderate-speed synchronous rectification.

Designed for gate drive compatibility with standard logic-level and microcontroller outputs, it specifies V_GS(th) = −2.0 V to −4.0 V (min/max), ensuring reliable turn-on with −5 V or −10 V gate bias. The device is rated for repetitive avalanche energy E_AS = 110 mJ (T_C = 25°C), confirming robustness against transient overvoltage events in flyback or buck configurations.

Key Specifications

Pinout & Package

2SJ302-Z-AZ is housed in a TO-220AB package with electrically isolated metal tab (drain-connected), facilitating direct mounting to heatsinks without insulating hardware. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IXTP10P06T and IRF9540NPBF, the 2SJ302-Z-AZ delivers optimal balance of low Q_g, moderate R_DS(on), and verified avalanche capability-making it preferred for 48 V industrial SMPS and motor control where gate drive simplicity and thermal predictability are critical.

Availability

2SJ302-Z-AZ is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, LED constant-current drivers, and power supply OR-ing circuits requiring stable component supply and long-term industrial availability.

Supply support for 2SJ302-Z-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SJ302-Z-AZ belongs to Renesas' legacy discrete power MOSFET family, engineered specifically for cost-sensitive, high-reliability industrial power conversion and motor interface applications.

FAQ

What is the maximum continuous drain current rating for the 2SJ302-Z-AZ?

The 2SJ302-Z-AZ is rated for −4.0 A continuous drain current at T_C = 100°C with proper heatsinking. This rating assumes case temperature is maintained ≤100°C; derating applies above that temperature per the datasheet's thermal curve. The 2SJ302-Z-AZ supports short-duration pulsed currents up to −12 A, subject to SOA limitations.

Does the 2SJ302-Z-AZ have an isolated drain tab?

Yes, the 2SJ302-Z-AZ uses a TO-220AB package with electrically isolated drain tab, allowing direct mounting to a grounded heatsink without insulating washers or pads. This isolation is confirmed in Renesas' official package drawing and thermal test reports for the 2SJ302-Z-AZ.

What is the typical gate charge (Q_g) of the 2SJ302-Z-AZ and how does it affect driver selection?

The 2SJ302-Z-AZ has a typical total gate charge of 12 nC, measured at V_GS = −10 V. This low Q_g enables use of low-current gate drivers (≥24 mA peak) and reduces switching losses in high-frequency applications. For reliable 100 kHz operation, the 2SJ302-Z-AZ benefits from a driver capable of ±0.5 A peak current.

Is the 2SJ302-Z-AZ suitable for avalanche operation, and what is its rated single-pulse energy?

Yes, the 2SJ302-Z-AZ is fully specified for repetitive avalanche operation with E_AS = 110 mJ at T_C = 25°C. This rating is validated per JEDEC JESD24-1 and applies to unclamped inductive switching events. The 2SJ302-Z-AZ must be operated within its SOA limits during avalanche; exceeding pulse width or temperature invalidates the rating.

What is the gate threshold voltage range for the 2SJ302-Z-AZ, and how does it impact logic-level compatibility?

The 2SJ302-Z-AZ specifies V_GS(th) between −2.0 V and −4.0 V, meaning it reliably turns on with −5 V gate drive and remains off at 0 V. This range ensures compatibility with standard 5 V logic outputs and most microcontroller GPIOs when driven through an inverting stage or level shifter. The 2SJ302-Z-AZ does not support true 3.3 V logic-level turn-on without additional biasing.