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Renesas 2SJ317NYTL-E

Part No.:
2SJ317NYTL-E
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SJ317NYTL-E.pdf
Description:
P-CHANNEL SMALL SIGNAL MOSFET
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,000

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Product details

Overview

2SJ317NYTL-E from Renesas Electronics is a silicon P-channel enhancement-mode MOSFET designed for low-voltage, high-speed power switching in compact motor drive and solenoid control circuits. It features a –12 V drain-to-source breakdown voltage, 0.28 Ω typical RDS(on) at –1 A/–4 V, and operates with gate threshold voltage between –0.4 V and –1.4 V. Its UPAK (PLZZ0004CA-A) package enables space-constrained camera and VTR motor driver implementations.

For engineers reviewing the 2SJ317NYTL-E datasheet, 2SJ317NYTL-E pinout, 2SJ317NYTL-E application, or 2SJ317NYTL-E equivalent, key selection criteria include its low gate drive requirement (–2.2 V for 0.5 A), fast turn-on delay (500 ns), and suitability for bidirectional current handling in compact DC load switching designs.

Technical Context

This device operates as a single P-channel power switch with symmetrical dual-drain terminals (pins 2 and 4), enabling flexible PCB layout in half-bridge or H-bridge configurations. Its body diode supports reverse recovery currents up to 2 A with trr not specified but characterized under di/dt = 10 A/µs.

The 2SJ317NYTL-E uses standard enhancement-mode MOSFET physics: conduction initiates when VGS falls below VGS(off) (–0.4 to –1.4 V), and RDS(on) degrades predictably with junction temperature-0.4 Ω at 25°C rising to ~0.6 Ω at 100°C per static characterization curves.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS–12 V: Maximum blocking voltage for low-voltage DC systems like battery-powered cameras and portable VTRs.
RDS(on) @ –1 A, –4 V0.28 Ω typ: Enables <100 mW conduction loss at 1 A, critical for thermally constrained UPAK package.
VGS(off)–0.4 to –1.4 V: Allows direct interface with 1.8–3.3 V logic outputs without level-shifting circuitry.
ID (DC)±2 A: Continuous current rating limited by 1 W channel dissipation on alumina ceramic board.
Ciss63 pF: Low input capacitance reduces gate drive power and speeds switching in PWM motor control.
td(on)500 ns typ: Supports PWM frequencies up to ~500 kHz in solenoid or small-motor drive applications.

Pinout & Package

2SJ317NYTL-E is housed in the UPAK (PLZZ0004CA-A) surface-mount package-a compact 4-pin leadless plastic package measuring 4.5 × 2.5 × 1.8 mm with exposed drain pads for thermal relief. The package supports tape-and-reel delivery (1000 pcs/reel) and is RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
1 (G)GateControl terminal; accepts negative VGS to turn on; requires no external pull-up due to P-channel topology.
2 (D)DrainMain current-carrying terminal; electrically tied to pin 4; connects to positive rail in high-side switch configuration.
3 (S)SourceReference terminal; typically connected to load; defines VGS reference point for gate drive.
4 (D)DrainSecond drain terminal; internally bonded to pin 2; provides redundant routing and improved thermal path to PCB copper.

Key Features

FeatureDesign Value
Very low on-resistance0.28 Ω RDS(on) at –1 A/–4 V enables efficient 1 A switching in space-limited UPAK footprint.
High speed switching500 ns turn-on delay supports >200 kHz PWM operation in motor phase control without excessive switching loss.
Symmetrical dual-drain structurePins 2 and 4 are internally shorted drains-reduces layout complexity and improves current sharing in high-current traces.
Low gate threshold voltageVGS(off) down to –0.4 V allows reliable turn-on from 1.8 V microcontroller I/O, eliminating level shifters.

Applications

Camera Motor DriveVTR Load Switch

Use Scenario: Driving autofocus or zoom motors in compact digital cameras powered by 3.3 V or 5 V rails.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor direction and duty cycle via PWM from MCU.

Use Value: Low RDS(on) minimizes heat buildup in sealed camera housing; dual-drain pins simplify thermal pad layout.

Use Scenario: Enabling/disabling tape transport motors and capstan drivers in portable video recorders.

IC Role / Device Role / Timing Role: Power switch sequencing load activation with precise timing control during mode transitions.

Use Value: Fast td(on) ensures motor starts within 500 ns of command, improving system responsiveness.

Solenoid Actuator ControlPower Supply OR'ing

Use Scenario: Driving 12 V-rated solenoids in industrial handheld testers or medical diagnostic tools.

IC Role / Device Role / Timing Role: Low-side or high-side switch delivering pulsed current bursts up to 4 A peak (ID(pulse)).

Use Value: 0.7 Ω max RDS(on) at –0.5 A/–2.2 V ensures solenoid coil energizes fully even with weak gate drive.

Use Scenario: OR'ing two independent 5 V supplies in redundant power architectures for embedded controllers.

IC Role / Device Role / Timing Role: Reverse-polarity protection and supply selection switch with body diode conducting forward.

Use Value: Integrated body diode supports reverse recovery up to 2 A, eliminating need for external Schottky.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ROHM RVX210PRDS(on) = 0.25 Ω @ –1 A/–4.5 V; slightly lower threshold (–0.3 to –1.2 V); same UPAK footprint.Better efficiency at higher gate drive voltages; marginally faster switching (td(on) = 400 ns).Select RVX210P if gate drive is ≥4.5 V and layout allows identical UPAK placement.
Toshiba SSM6P16FEDouble-die P-channel pair in SOT-363; RDS(on) = 0.35 Ω @ –1 A/–4.5 V; separate gate pins per channel.Enables dual independent switches in same area; not a drop-in replacement due to different pinout and dual-channel architecture.Choose SSM6P16FE only when dual-switch functionality is required and board redesign is acceptable.

Compared with RVX210P and SSM6P16FE, the 2SJ317NYTL-E offers the lowest gate drive voltage compatibility (–2.2 V turn-on), making it uniquely suitable for direct interfacing with 1.8–2.5 V logic in ultra-low-power portable systems where gate drive headroom is constrained.

Availability

2SJ317NYTL-E is available at Aetrix Electronics and suitable for camera motor drive, VTR power switching, and solenoid actuation requiring stable component supply across long-life consumer electronics programs.

Supply support for 2SJ317NYTL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SJ317NYTL-E belongs to Renesas' legacy discrete power MOSFET product line, engineered specifically for compact, low-voltage DC motor and solenoid drive applications in consumer imaging and portable AV equipment.

FAQ

What is the maximum continuous drain current rating for the 2SJ317NYTL-E?

The 2SJ317NYTL-E has a continuous drain current (ID) rating of ±2 A at Ta = 25°C, measured on an alumina ceramic board (12.5 × 20 × 0.7 mm). This rating assumes proper PCB thermal design; derating applies above 25°C ambient, with full derating to zero at 150°C channel temperature. Actual usable current depends on layout, copper area, and airflow.

Does the 2SJ317NYTL-E have a built-in body diode, and what are its reverse recovery characteristics?

Yes, the 2SJ317NYTL-E integrates a body diode between source and drain. Its reverse recovery time (trr) is characterized under di/dt = 10 A/µs with VGS = 0, though no absolute maximum value is specified in the datasheet. The device supports reverse drain current (IDR) up to 2 A, making it suitable for freewheeling paths in inductive loads like motors and solenoids.

Can the 2SJ317NYTL-E be driven directly by a 3.3 V microcontroller GPIO?

Yes-the 2SJ317NYTL-E's gate threshold voltage (VGS(off)) ranges from –0.4 V to –1.4 V, and its RDS(on) is specified down to VGS = –2.2 V. A 3.3 V MCU output pulling the gate to 0 V while the source is at 3.3 V yields VGS ≈ –3.3 V, well within the guaranteed turn-on range. No level shifter is needed.

What is the thermal resistance (RθJA) of the 2SJ317NYTL-E in its UPAK package?

The datasheet does not specify RθJA directly, but provides channel dissipation (Pch) = 1 W on an alumina ceramic board (12.5 × 20 × 0.7 mm). From this, RθJA can be estimated at approximately 150°C/W (using ΔT = 150°C max rise over ambient). For production designs, thermal simulation using the provided package dimensions and copper layout is recommended.

Is the 2SJ317NYTL-E RoHS compliant and halogen-free?

Yes-the 2SJ317NYTL-E meets RoHS Directive 2011/65/EU requirements as confirmed by Renesas' environmental compliance documentation. While halogen-free status is not explicitly declared in the 2005 datasheet, Renesas' current product policy aligns with JEDEC JS709A, and the UPAK package construction is consistent with halogen-free materials used in later revisions of this family.

2SJ317NYTL-E Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SJ317NYTL-E FAQ

1.How can I place an order for 2SJ317NYTL-E through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ317NYTL-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ317NYTL-E reliable?

The price and inventory of 2SJ317NYTL-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ317NYTL-E is usually 5 days.

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2SJ317NYTL-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ317NYTL-E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ317NYTL-E?

For technical support, including 2SJ317NYTL-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ317NYTL-E requirements.

6.How does Aetrix verify that 2SJ317NYTL-E is sourced from the original manufacturer or authorized distributors?

All 2SJ317NYTL-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ317NYTL-E meets industry standards.

7.What is the process for return or replacement of 2SJ317NYTL-E?

All 2SJ317NYTL-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ317NYTL-E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ317NYTL-E part is unused and in its original packaging.

Return procedure for 2SJ317NYTL-E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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