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Renesas 2SJ317NYTR-E
- Part No.:
- 2SJ317NYTR-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SJ317NYTR-E.pdf
- Description:
- P-CHANNEL SMALL SIGNAL MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:549
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Product details
Overview
2SJ317NYTR-E from Renesas Electronics is a silicon P-channel MOSFET designed for high-speed power switching in low-voltage applications. It delivers RDS(on) = 0.28 Ω (typ) at VGS = –4 V and ID = –1 A, supports ±2 A continuous drain current, and features UPAK (PLZZ0004CA-A) surface-mount package with dual-drain configuration. It is used in camera/VTR motor drive circuits, solenoid drivers, and power switches.
For engineers reviewing the 2SJ317NYTR-E datasheet, 2SJ317NYTR-E pinout, 2SJ317NYTR-E application, or 2SJ317NYTR-E equivalent, key selection criteria include guaranteed VDSS = –12 V rating, gate threshold voltage range of –0.4 V to –1.4 V, body diode reverse recovery time (trr), thermal derating on alumina ceramic board, and compatibility with low-voltage logic-level gate drive.
Technical Context
This P-channel enhancement-mode MOSFET operates with negative gate-to-source control, enabling high-side switching without level-shifting circuitry. Its low RDS(on) and fast switching (td(on) = 500 ns, td(off) = 2860 ns) support efficient DC-DC conversion and PWM-driven loads.
The device integrates a built-in body diode rated for 2 A reverse drain current (IDR) and exhibits Ciss = 63 pF, Coss = 180 pF, and Crss = 23 pF at VDS = –5 V - parameters critical for snubberless flyback and H-bridge commutation design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –12 V: Maximum blocking voltage for low-voltage rail switching (e.g., 5 V, 3.3 V systems). |
| RDS(on) @ VGS = –4 V | 0.28 Ω (typ): Enables <100 mW conduction loss at –1 A, suitable for thermally constrained PCBs. |
| ID (continuous) | ±2 A: Supports motor/solenoid loads up to ~10 W at 5 V with adequate heatsinking. |
| VGS(th) | –0.4 V to –1.4 V: Ensures turn-on with standard CMOS/TTL logic outputs (e.g., –3.3 V or –5 V). |
| Pch | 1 W (on alumina ceramic board): Defines safe operating area under pulsed or DC conditions per layout. |
| td(off) | 2860 ns (typ): Determines minimum PWM off-time and dead-time requirements in half-bridge designs. |
| Coss | 180 pF: Impacts switching loss and EMI in hard-switched topologies above 100 kHz. |
Pinout & Package
2SJ317NYTR-E uses the UPAK (PLZZ0004CA-A) surface-mount package - a compact 4-pin leadless plastic package with exposed drain pads for thermal performance. Dimensions: 4.5 × 2.5 × 1.8 mm (L × W × H), mass: 0.050 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts negative VGS to modulate channel conductivity; requires stable –4 V bias for full enhancement. |
| 2 (D) | Drain (Terminal 1) | Main high-side current path; electrically tied to Pin 4; connects to load supply rail (e.g., VCC). |
| 3 (S) | Source | Reference node for gate drive; ties to load return; defines VGS reference point in high-side configuration. |
| 4 (D) | Drain (Terminal 2) | Second drain connection; paralleled internally with Pin 2 to reduce package inductance and improve thermal spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Very low RDS(on) | 0.28 Ω (typ) at –1 A/–4 V enables >95% efficiency in 5 V motor drive stages with minimal heatsink. |
| High-speed switching | 500 ns turn-on delay allows operation up to ~200 kHz PWM in discrete power stages without excessive loss. |
| Dual-drain package | Two drain terminals (Pins 2 & 4) lower parasitic inductance and improve thermal dissipation over single-drain SOT-23 equivalents. |
| Logic-level compatible | VGS(th) max –1.4 V ensures reliable turn-on using –3.3 V or –5 V microcontroller GPIOs without external level shifters. |
| Body diode with defined trr | Reverse recovery behavior characterized for inductive load freewheeling; supports snubber-free solenoid driving. |
Applications
| Camera Motor Drive | VTR Load Switch |
|---|---|
|
Use Scenario: Bidirectional focus/zoom motor control in compact digital cameras requiring silent, low-power actuation. IC Role / Device Role / Timing Role: High-side P-channel switch controlling motor polarity via H-bridge half-leg; gate driven by MCU PWM + logic-level inversion. Use Value: Low RDS(on) minimizes battery drain during sustained motor hold; fast td(off) enables precise microstepping timing control. |
Use Scenario: Power sequencing and tape loading solenoid activation in portable video recorders. IC Role / Device Role / Timing Role: Low-voltage power switch enabling 3.3 V/5 V system-controlled engagement of mechanical actuators. Use Value: Guaranteed –12 V VDSS provides margin against inductive kickback; dual-drain layout reduces EMI during solenoid de-energization. |
| Portable Audio Power Switch | Industrial Sensor Power Gate |
|
Use Scenario: On-demand power gating for analog audio amplifiers or codec ICs in battery-powered headphones. IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry from main supply; controlled by system PMIC or baseband processor. Use Value: Sub-1 µA IDSS (<–1 µA) prevents standby current leakage; –0.4 V VGS(th) min ensures robust turn-off even with weak pull-up. |
Use Scenario: Remote sensor node power management where fieldbus voltage (e.g., 24 V loop) must be locally switched to 5 V subsystems. IC Role / Device Role / Timing Role: Isolated high-side switch decoupling sensitive analog front-end from noisy industrial bus transients. Use Value: 150 °C Tch rating supports operation in unventilated enclosures; Coss/Crss values validated for EMC-compliant layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ROHM RVX2001AT2L | RDS(on) = 0.35 Ω (typ) at –1 A/–4.5 V; SC-70-6 package; higher Ciss (100 pF). | Limited to <1 A continuous due to smaller package; less thermal margin on FR-4. | Prefer when board space is critical and peak current ≤ 1 A; verify gate drive strength for VGS(th) = –0.7 V min. |
| Toshiba XP152A12AUPR | RDS(on) = 0.25 Ω (typ) at –1 A/–4.5 V; UDFN-6 package; no dual-drain configuration. | Higher thermal resistance (θJA = 120 °C/W vs. 100 °C/W for 2SJ317NYTR-E on alumina); no body diode trr spec. | Choose for tighter RDS(on) where layout allows enhanced copper pour; avoid in solenoid apps without external flyback diode. |
Compared with ROHM RVX2001AT2L and Toshiba XP152A12AUPR, the 2SJ317NYTR-E offers superior thermal performance via dual-drain UPAK packaging and fully characterized reverse recovery for inductive loads - making it preferred for motor and solenoid drive where reliability under transient stress is critical.
Availability
2SJ317NYTR-E is available at Aetrix Electronics and suitable for camera motor drive, VTR solenoid control, and portable audio power gating requiring stable component supply across production lifecycles.
Supply support for 2SJ317NYTR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog power, and SoC solutions for automotive, industrial, and consumer applications.
The 2SJ317NYTR-E belongs to Renesas' legacy discrete power portfolio, engineered specifically for low-voltage, high-reliability switching in portable imaging and audio equipment where size, efficiency, and gate-drive simplicity are essential.
FAQ
What is the maximum continuous drain current rating for the 2SJ317NYTR-E?
The 2SJ317NYTR-E is rated for ±2 A continuous drain current (ID) at Ta = 25°C when mounted on an alumina ceramic board (12.5 × 20 × 0.7 mm). Derating applies above 25°C ambient; at 75°C case temperature, the usable ID drops to approximately ±1.2 A per the power vs. temperature curve on page 3 of the datasheet. This rating assumes proper PCB copper area and thermal vias for heat transfer.
Does the 2SJ317NYTR-E have a specified reverse recovery time (trr) for its body diode?
Yes - the 2SJ317NYTR-E body diode reverse recovery time (trr) is graphically characterized on page 4 of the datasheet (Rev.2.00, Sep 07, 2005), showing trr ≈ 200 ns at IF = –2 A, di/dt = 10 A/µs, and VR = –10 V. While not given as a tabulated parameter, this plot confirms suitability for moderate-frequency inductive switching without external snubbers.
Can the 2SJ317NYTR-E be driven directly by a 3.3 V microcontroller GPIO?
No - the 2SJ317NYTR-E requires a negative gate-to-source voltage (VGS) to turn on. A 3.3 V GPIO alone cannot produce the required –3.3 V or lower relative to source. It must be paired with a level-shifting circuit (e.g., charge pump or complementary driver) or used in high-side configuration where source is at VCC and gate is pulled down to GND or –3.3 V reference.
What is the meaning of "NY" marking on the 2SJ317NYTR-E package?
The "NY" marking on the 2SJ317NYTR-E top surface is the device's identification code per Renesas' internal marking convention, confirming it as the 2SJ317 variant in UPAK packaging. This marking aligns with the ordering code suffix "NYTR-E", where "NY" denotes the specific process and test bin, and "TR-E" indicates taping in reel format (1000 pcs/reel).
Is the 2SJ317NYTR-E RoHS compliant and halogen-free?
Yes - the 2SJ317NYTR-E complies with the EU RoHS Directive (2011/65/EU) and is halogen-free per Renesas' environmental policy. This is confirmed in the "Environmental Information" section of Renesas' official product page and supported by material declarations dated post-2006. The UPAK package uses lead-free matte tin plating and green molding compound.
2SJ317NYTR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SJ317NYTR-E FAQ
1.How can I place an order for 2SJ317NYTR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ317NYTR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ317NYTR-E reliable?
The price and inventory of 2SJ317NYTR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ317NYTR-E is usually 5 days.
3.What payment methods are accepted for 2SJ317NYTR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ317NYTR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ317NYTR-E?
2SJ317NYTR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ317NYTR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ317NYTR-E?
For technical support, including 2SJ317NYTR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ317NYTR-E requirements.
6.How does Aetrix verify that 2SJ317NYTR-E is sourced from the original manufacturer or authorized distributors?
All 2SJ317NYTR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ317NYTR-E meets industry standards.
7.What is the process for return or replacement of 2SJ317NYTR-E?
All 2SJ317NYTR-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ317NYTR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ317NYTR-E part is unused and in its original packaging.
Return procedure for 2SJ317NYTR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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