Renesas 2SJ325-AY

Overview

2SJ325-AY from Renesas Electronics is a P-channel power MOSFET designed for low-voltage switching applications including solenoid, motor, and lamp drivers. It features a typical drain-source on-resistance of 0.08 Ω at V_GS = −10 V and I_D = −2.0 A, 800 pF typical input capacitance, built-in gate-source protection diode, −30 V V_DSS, and −4.0 A continuous drain current rating.

For engineers reviewing the 2SJ325-AY datasheet, 2SJ325-AY pinout, 2SJ325-AY application, or 2SJ325-AY equivalent, key selection criteria include verified R_DS(on) at low gate drive (−4 V), thermal performance in TO-252 package, gate protection integration, and suitability for 24 V industrial load switching with pulse current capability up to −16 A.

Technical Context

The 2SJ325-AY operates as a voltage-controlled unidirectional switch in high-side configurations, leveraging its P-channel enhancement-mode structure. Its gate threshold voltage (V_GS(th)) is specified between −1.0 V and −3.0 V, enabling reliable turn-on with standard logic-level or microcontroller-compatible drive signals.

Thermal design relies on junction-to-case conduction through the exposed drain tab in TO-252 (MP-3Z) package, supporting 20 W total power dissipation at T_C = 25°C. The built-in gate-source Zener diode clamps transient overvoltage, eliminating need for external gate protection in many solenoid-driving circuits.

Key Specifications

Pinout & Package

2SJ325-AY is housed in TO-252 (MP-3Z) surface-mount package with exposed drain tab for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain Fin (electrically connected to Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9540NPbF and Si2301DDS, the 2SJ325-AY uniquely combines −4 V logic compatibility, integrated gate protection, TO-252 thermal performance, and −16 A pulse rating-making it optimal for industrial solenoid and motor drivers where reliability and board-level simplicity are prioritized.

Availability

2SJ325-AY is available at Aetrix Electronics and suitable for industrial solenoid control, DC motor direction switching, and automotive lamp dimming requiring stable component supply across long-lifecycle embedded programs.

Supply support for 2SJ325-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SJ325-AY belongs to Renesas' legacy power MOSFET product line targeting cost-sensitive, high-reliability industrial and automotive auxiliary systems with emphasis on ease of use and robustness in 12–24 V load-switching applications.

FAQ

What is the maximum gate-source voltage rating for the 2SJ325-AY?

The 2SJ325-AY has a DC gate-source voltage rating of −20 V to +10 V and an AC rating of ±20 V. Exceeding these limits risks permanent gate oxide damage. For safe operation, keep V_GS within −4 V to −10 V during normal switching, and ensure transient clamping (e.g., via built-in Zener) handles any overshoot. The 2SJ325-AY's integrated gate-source protection diode helps absorb such transients without external components.

Can the 2SJ325-AY be driven directly by a 3.3 V microcontroller GPIO?

Yes - the 2SJ325-AY delivers 0.15 Ω R_DS(on) at V_GS = −4 V, making it compatible with 3.3 V logic when used with an inverting driver stage (e.g., NPN transistor or logic-level shifter) to generate negative gate voltage relative to source. Direct 3.3 V connection to gate is not functional since the device requires negative V_GS; the 2SJ325-AY must be used in high-side configuration with referenced gate drive.

What is the thermal resistance (R_θJC) of the 2SJ325-AY in TO-252 package?

The 2SJ325-AY does not specify R_θJC explicitly in its datasheet, but its 20 W total power dissipation rating at T_C = 25°C implies an effective R_θJC ≈ 1.25 °C/W when mounted on a minimum 200 mm² 2-oz copper pad. Actual R_θJA depends heavily on PCB layout; Renesas recommends full-soldering of the drain fin (Pin 4) to maximize thermal transfer. For thermal design of the 2SJ325-AY, assume R_θJA ≈ 100 °C/W with standard JEDEC 2S2P test board.

Does the 2SJ325-AY have avalanche ruggedness rating?

No - the 2SJ325-AY datasheet does not specify single-pulse or repetitive avalanche energy (E_AS) ratings. It is not characterized for unclamped inductive switching. For solenoid or motor loads, always use freewheeling diodes or TVS clamps across the load to suppress inductive kickback. The 2SJ325-AY's design focuses on steady-state and pulse-current switching rather than ruggedness under avalanche conditions.

Is the 2SJ325-AY RoHS compliant?

Yes - the 2SJ325-AY conforms to EU RoHS Directive 2011/65/EU as confirmed by Renesas Electronics' material declarations and packaging markings. Lead-free terminations and halogen-free molding compound are used. The "-AY" suffix denotes RoHS-compliant packaging per Renesas' internal part numbering convention; this applies to all 2SJ325-AY units supplied after January 2006. Always verify compliance via Renesas' official product change notices for the 2SJ325-AY.