Renesas 2SJ325-Z-E1-AY

Overview

2SJ325-Z-E1-AY from Renesas Electronics is a P-channel enhancement-mode power MOSFET designed for low-voltage switching applications including solenoid, motor, and lamp drivers. It features R_DS(on) = 0.08 Ω (typ.) at V_GS = −10 V, ID = −2.0 A; V_DSS = −30 V; I_D(DC) = −4.0 A; C_iss = 800 pF (typ.); and TO-252 (MP-3Z) surface-mount package.

For engineers reviewing the 2SJ325-Z-E1-AY datasheet, 2SJ325-Z-E1-AY pinout, 2SJ325-Z-E1-AY application, or 2SJ325-Z-E1-AY equivalent, key selection criteria include guaranteed gate-source voltage tolerance (±10 V DC / ±20 V AC), pulsed drain current capability (−16 A), channel temperature limit (150°C), built-in gate-source protection diode, and thermal performance under PCB-mounted conditions.

Technical Context

This device operates as a single N-channel depletion-mode MOSFET in reverse-conduction configuration - no; it is explicitly a P-channel enhancement-mode device requiring negative gate bias relative to source to conduct. Its low R_DS(on) and moderate C_iss support efficient 20 W (T_C = 25°C) switching in DC-fed inductive loads.

The TO-252 (MP-3Z) package integrates a drain-fin structure for improved thermal conduction to the PCB, with electrode connections defined as Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain Fin - electrically tied to Pin 2 per internal construction and datasheet equivalent circuit.

Key Specifications

Pinout & Package

2SJ325-Z-E1-AY is housed in a TO-252 (MP-3Z) surface-mount package with exposed drain-fin thermal pad. The package measures 6.5 mm × 5.0 mm × 2.3 mm (L × W × H) and uses copper leadframe with matte tin plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with IRF9540NPbF and Si2301DDS-T1-GE3, the 2SJ325-Z-E1-AY uniquely balances low on-resistance (0.08 Ω), −30 V rating, and TO-252 thermal performance - making it optimal for mid-power industrial and automotive switching where efficiency, reliability, and manufacturability are jointly prioritized.

Availability

2SJ325-Z-E1-AY is available at Aetrix Electronics and suitable for automotive door lock actuation, industrial PLC output stages, and DC motor reversing bridges requiring stable component supply across production lifecycles.

Supply support for 2SJ325-Z-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The 2SJ325-Z-E1-AY belongs to Renesas' legacy power MOSFET product line, engineered specifically for robust, cost-effective DC switching in automotive body electronics and industrial control systems.

FAQ

What is the maximum continuous drain current rating for the 2SJ325-Z-E1-AY?

The 2SJ325-Z-E1-AY has a maximum continuous drain current (I_D(DC)) of −4.0 A at case temperature T_C = 25°C. This rating decreases with rising case temperature and must be derated per the Safe Operating Area (SOA) curve in the official Renesas datasheet D18328EJ3V0DS. At T_C = 100°C, the usable I_D(DC) drops to approximately −2.2 A. Always verify thermal design margins using actual PCB copper area and airflow conditions before finalizing the 2SJ325-Z-E1-AY in production.

Does the 2SJ325-Z-E1-AY include integrated gate protection?

Yes, the 2SJ325-Z-E1-AY incorporates a built-in gate-source Zener diode for electrostatic discharge (ESD) and transient overvoltage protection. This feature clamps gate-source voltage to within ±20 V (AC) and −20 V/+10 V (DC), eliminating the need for external gate protection components in most solenoid and lamp driver designs. The protection diode is confirmed in the "Features" section and equivalent circuit diagram of the Renesas datasheet D18328EJ3V0DS, and applies directly to the 2SJ325-Z-E1-AY variant.

What is the gate threshold voltage range for the 2SJ325-Z-E1-AY?

The gate threshold voltage (V_GS(th)) for the 2SJ325-Z-E1-AY is specified as −1.0 V to −3.0 V, with a typical value of −2.0 V at I_D = −1 mA. This means the device begins conducting significantly when V_GS falls below −1.0 V and achieves full enhancement near −4 V to −10 V. The 2SJ325-Z-E1-AY is not logic-level compatible with 3.3 V or 5 V microcontrollers without level shifting, and proper negative gate drive design is essential for reliable operation of the 2SJ325-Z-E1-AY.

Can the 2SJ325-Z-E1-AY be used in a high-side switching configuration?

Yes, the 2SJ325-Z-E1-AY is expressly designed for high-side switching applications, as confirmed by its P-channel architecture and intended use in solenoid, motor, and lamp drivers. Its −30 V V_DSS and −4.0 A I_D(DC) ratings support direct connection between supply rail and load, with source tied to V_CC and drain feeding the load. Gate drive must be referenced to source potential, requiring either a charge-pump circuit or isolated level shifter - a key implementation detail for any 2SJ325-Z-E1-AY high-side design.

Is the 2SJ325-Z-E1-AY RoHS compliant and halogen-free?

Yes, the 2SJ325-Z-E1-AY complies with the EU RoHS Directive (2011/65/EU) and is halogen-free, as confirmed by Renesas Electronics' environmental compliance documentation and material declarations. The "E1" suffix in the part number denotes lead-free (Pb-free) termination, and the "-Z" variant indicates packaging in embossed tape and reel per JEDEC J-STD-020. All 2SJ325-Z-E1-AY units supplied by Aetrix Electronics carry full RoHS and REACH certification documentation upon request.