My Inquiry
My Account
Renesas 2SJ325-Z-E1-AZ
- Part No.:
- 2SJ325-Z-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
2SJ325-Z-E1-AZ.pdf
- Description:
- P-CHANNEL POWER SWITCHING MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:1,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SJ325-Z-E1-AZ from Renesas Electronics is a P-channel enhancement-mode power MOSFET designed for low-voltage switching applications including solenoid, motor, and lamp drivers. It features RDS(on) = 0.08 Ω (typ.) at VGS = −10 V, ID = −2.0 A; VDSS = −30 V; ID(DC) = −4.0 A; and built-in gate-source protection diode.
For engineers reviewing the 2SJ325-Z-E1-AZ datasheet, 2SJ325-Z-E1-AZ pinout, 2SJ325-Z-E1-AZ application, or 2SJ325-Z-E1-AZ equivalent, key selection criteria include guaranteed low RDS(on) at −4 V gate drive, TO-252 package thermal performance, and suitability for 24 V DC load switching in industrial control modules.
Technical Context
This device operates as a single N-channel depletion-mode MOSFET - wait, correction: it is a P-channel enhancement-mode MOSFET with negative threshold voltage (VGS(th) ≈ −1.0 to −2.5 V), requiring negative gate bias relative to source for conduction. Its low Ciss of 800 pF (typ.) supports fast switching in PWM-driven loads up to ~100 kHz.
The integrated gate-source Zener diode clamps transient overvoltage during inductive turn-off, eliminating need for external TVS in many solenoid driver designs. Thermal resistance RθJC is 0.75°C/W (typ.), enabling 20 W dissipation at case temperature ≤25°C per absolute maximum rating PT1.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V - supports reliable operation in 24 V nominal systems with surge margin up to ±30 V transients |
| RDS(on) (VGS = −10 V) | 0.08 Ω (typ.) - enables <160 mW conduction loss at −2 A DC load current |
| RDS(on) (VGS = −4 V) | 0.15 Ω (typ.) - ensures usable on-resistance with logic-level gate drive from microcontrollers |
| Ciss | 800 pF (typ.) - allows efficient 100 kHz PWM switching with moderate gate driver strength |
| ID(DC) | −4.0 A - rated continuous drain current suitable for driving 24 V/30 W lamps or small DC motors |
| Package | TO-252 (MP-3Z) - surface-mount package with exposed drain fin for enhanced PCB heat spreading |
Pinout & Package
2SJ325-Z-E1-AZ uses the TO-252 (MP-3Z) package with three main terminals and an integral drain-fin thermal pad. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain Fin (electrically connected to Pin 2). The drain fin must be soldered to a large copper pour for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input | Receives negative gate voltage relative to source to turn on; protected by internal Zener diode |
| 2 (Drain) | High-side load connection | Connected to positive supply rail; carries full load current when device is off |
| 3 (Source) | Reference node | Connected to system ground or low-side return; defines gate drive reference point |
| 4 (Drain Fin) | Thermal & electrical extension | Electrically tied to drain; requires direct PCB copper connection for effective heat transfer |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at −4 V | Enables direct interface with 5 V or 3.3 V microcontroller GPIO without level-shifting circuitry |
| Built-in G-S Zener diode | Eliminates need for external gate protection in inductive load switching (e.g., relay coils) |
| TO-252 thermal design | Allows 20 W power dissipation with proper PCB copper area - 2× higher than TO-92 equivalents |
| Fast switching capability | 800 pF Ciss supports clean 100 kHz PWM edges with <100 ns rise/fall times using 1 Ω gate resistor |
Applications
| Industrial Solenoid Control | DC Motor Direction Switching |
|---|---|
Use Scenario: Driving 24 V DC solenoids in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: High-side switch controlling energization of 20–30 W solenoid coils with 100 ms duty cycle. Use Value: Low RDS(on) minimizes self-heating during sustained actuation; built-in Zener prevents gate damage from coil flyback. | Use Scenario: Bidirectional H-bridge half-bridge leg for 12–24 V brushed DC motors in automated valves. IC Role / Device Role / Timing Role: P-channel high-side switch paired with N-channel low-side counterpart in complementary topology. Use Value: −4 V compatible threshold enables simple gate drive with bootstrap-free logic-level control. |
| Automotive Lamp Dimming | Power Supply OR-ing |
Use Scenario: PWM-controlled headlamp or foglight dimming in 12 V automotive body control modules. IC Role / Device Role / Timing Role: Low-loss series switch modulating current through incandescent or halogen lamps. Use Value: 0.08 Ω RDS(on) limits conduction loss to <320 mW at 2 A, reducing thermal stress in confined enclosures. | Use Scenario: Redundant 24 V power input selection in industrial backup power supplies. IC Role / Device Role / Timing Role: Reverse-polarity protected OR-ing switch preventing backfeed between parallel supplies. Use Value: Inherent body diode orientation blocks reverse current; low RDS(on) reduces voltage drop vs. Schottky diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9530NPbF | VDSS = −100 V, RDS(on) = 0.3 Ω @ −10 V - higher voltage rating but 3.75× higher on-resistance | Suitable for 48 V systems; less efficient in 24 V solenoid drivers due to higher conduction loss | Select only if −100 V blocking is required; otherwise 2SJ325-Z-E1-AZ offers superior efficiency at 24 V |
| Si2301DDS-T1-GE3 | SO-23 package, RDS(on) = 0.135 Ω @ −4.5 V - smaller footprint but lower power handling (1.4 W TA) | Applicable for space-constrained PCBs with <1 A loads; not suitable for 4 A continuous solenoid use | Choose for compact low-current designs; 2SJ325-Z-E1-AZ remains preferred for >2 A industrial loads |
Compared with IRF9530NPbF and Si2301DDS-T1-GE3, the 2SJ325-Z-E1-AZ delivers optimal balance of low RDS(on), TO-252 thermal capability, and −4 V gate compatibility for 24 V industrial switching - offering 60% lower conduction loss than IRF9530NPbF and 14× higher power dissipation than Si2301DDS-T1-GE3.
Availability
2SJ325-Z-E1-AZ is available at Aetrix Electronics and suitable for industrial solenoid control, DC motor direction switching, and automotive lamp dimming requiring stable component supply across multi-year production cycles.
Supply support for 2SJ325-Z-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.
The 2SJ325-Z-E1-AZ belongs to Renesas' legacy discrete power MOSFET product line, engineered specifically for robust, cost-effective DC load switching in industrial automation and automotive body electronics.
FAQ
What is the gate threshold voltage range for the 2SJ325-Z-E1-AZ?
The 2SJ325-Z-E1-AZ has a typical gate threshold voltage (VGS(th)) range of −1.0 V to −2.5 V at ID = −1 mA. This confirms its enhancement-mode P-channel behavior: conduction begins when VGS falls below this negative threshold. Full enhancement occurs at VGS ≤ −4 V, where RDS(on) reaches 0.15 Ω (typ.). Designers must ensure gate drive sinks below −2.5 V to guarantee turn-on across temperature and process variation. The 2SJ325-Z-E1-AZ data sheet specifies this parameter under Absolute Maximum Ratings and Electrical Characteristics sections.
Does the 2SJ325-Z-E1-AZ require an external gate resistor?
Yes, a gate resistor is recommended for the 2SJ325-Z-E1-AZ to control switching speed and suppress ringing caused by gate-drain capacitance (Miller effect). A 10 Ω to 100 Ω resistor is typical for 10–100 kHz PWM applications. While the device includes a built-in gate-source Zener diode, it does not eliminate need for controlled gate drive impedance. Excessive dV/dt can cause false turn-on; insufficient damping leads to oscillation. The 2SJ325-Z-E1-AZ's Ciss of 800 pF interacts directly with gate resistance to set rise/fall time - critical for EMI and shoot-through prevention in bridge circuits.
Can the 2SJ325-Z-E1-AZ be used in linear (analog) regulation mode?
No, the 2SJ325-Z-E1-AZ is not characterized or rated for linear-mode operation. Its Safe Operating Area (SOA) is specified only for pulsed and DC switching conditions - not for extended time in the ohmic or saturation region. Continuous linear operation risks thermal runaway due to positive temperature coefficient of RDS(on) and inadequate SOA derating at elevated temperatures. The 2SJ325-Z-E1-AZ datasheet provides no linear-region SOA curves or thermal impedance data for analog use. For linear regulation, purpose-built LDOs or bipolar pass transistors are appropriate alternatives.
What is the maximum junction temperature and thermal resistance for the 2SJ325-Z-E1-AZ?
The 2SJ325-Z-E1-AZ has a maximum channel temperature (Tch) of 150°C and a typical junction-to-case thermal resistance (RθJC) of 0.75°C/W. With a TO-252 package mounted on ≥10 cm² 2-oz copper, total RθJA is approximately 50°C/W - enabling 1.0 W dissipation at ambient 25°C. Derating is required above 25°C ambient per the datasheet's "Total Power Dissipation (TA = 25°C)" limit of 1.0 W. The 2SJ325-Z-E1-AZ must be thermally anchored to PCB copper; floating mounting violates absolute maximum ratings.
Is the 2SJ325-Z-E1-AZ RoHS compliant and lead-free?
Yes, the 2SJ325-Z-E1-AZ is RoHS compliant and lead-free. Per Renesas documentation and packaging markings (E1 suffix), it conforms to EU Directive 2011/65/EU and subsequent amendments. The "-E1" in the part number denotes lead-free plating and RoHS-compliant packaging. No exemptions apply. Renesas confirms compliance across all manufacturing lots post-2006, aligning with the January 2007 datasheet revision. The 2SJ325-Z-E1-AZ meets JEDEC J-STD-609A Class 1 marking requirements for lead-free terminations.
2SJ325-Z-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2SJ325-Z-E1-AZ FAQ
1.How can I place an order for 2SJ325-Z-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ325-Z-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ325-Z-E1-AZ reliable?
The price and inventory of 2SJ325-Z-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ325-Z-E1-AZ is usually 5 days.
3.What payment methods are accepted for 2SJ325-Z-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ325-Z-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ325-Z-E1-AZ?
2SJ325-Z-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ325-Z-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ325-Z-E1-AZ?
For technical support, including 2SJ325-Z-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ325-Z-E1-AZ requirements.
6.How does Aetrix verify that 2SJ325-Z-E1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SJ325-Z-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ325-Z-E1-AZ meets industry standards.
7.What is the process for return or replacement of 2SJ325-Z-E1-AZ?
All 2SJ325-Z-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ325-Z-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ325-Z-E1-AZ part is unused and in its original packaging.
Return procedure for 2SJ325-Z-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SJ325-Z-E1-AZ Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
