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Renesas 2SJ330-AZ

Part No.:
2SJ330-AZ
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
Aetrix2SJ330-AZ.pdf
Description:
P-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:150

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Product details

Overview

2SJ330-AZ from Renesas Electronics is a P-channel enhancement-mode vertical DMOS power MOSFET designed for high-speed switching in DC-DC converters and motor drivers. It features VDSS = −60 V, RDS(on) = 0.28 Ω (max) at VGS = −10 V, ID = −3 A continuous drain current, and TO-220AB package with isolated tab. It is commonly used in low-side switching circuits for industrial power supplies.

For engineers reviewing the 2SJ330-AZ datasheet, 2SJ330-AZ pinout, 2SJ330-AZ application, or 2SJ330-AZ equivalent, key selection criteria include guaranteed RDS(on) at −10 V gate drive, safe operating area (SOA) compliance up to 100 µs, avalanche energy rating (EAS = 115 mJ), and thermal resistance (RthJC = 2.5 °C/W) for heatsink-limited designs.

Technical Context

The 2SJ330-AZ employs a vertical DMOS structure optimized for low conduction loss and fast turn-off. Its gate threshold voltage (VGS(th)) ranges from −2.0 V to −4.0 V, enabling reliable enhancement-mode operation with standard logic-level gate drivers. The device supports repetitive avalanche capability and exhibits low gate charge (Qg = 12 nC typical) for efficient PWM control.

Designed for hard-switching applications, the 2SJ330-AZ meets JEDEC JESD47 reliability standards and is rated for operation from −55 °C to +150 °C junction temperature. Its SOA curve is defined for both linear and switching modes, with pulse width and duty cycle limits specified per test condition in the official datasheet.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS−60 V - Maximum drain-to-source voltage before breakdown; sets upper limit for bus voltage in buck converter or H-bridge topologies.
RDS(on)0.28 Ω (max) at VGS = −10 V - Determines conduction loss and thermal rise under full-load DC conditions.
ID (continuous)−3 A - Rated DC drain current with case temperature ≤ 25 °C; derates linearly above that temperature.
Qg12 nC (typ) - Total gate charge; directly impacts driver power requirement and switching transition time.
EAS115 mJ - Single-pulse avalanche energy rating; enables robustness against inductive load switching transients.
RthJC2.5 °C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for sustained 3 A operation.

Pinout & Package

2SJ330-AZ is housed in a TO-220AB package with isolated metal tab (drain-connected). The package provides mechanical stability and thermal path to external heatsink via the tab, while maintaining electrical isolation between drain and mounting surface when properly insulated.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current-carrying terminal, internally connected to metal tabMust be electrically isolated from chassis/heatsink unless system design intentionally bonds drain to ground; primary thermal path.
GateControl electrode for channel formationRequires −10 V drive for full enhancement; sensitive to ESD; must be driven with low-impedance source to minimize switching losses.
SourceReference node for gate drive and current return pathCommon connection point for gate driver return and load return; defines local ground reference for control circuitry.

Key Features

FeatureDesign Value
Repetitive avalanche ratedGuaranteed operation under inductive switching stress without failure; eliminates need for external snubbers in many flyback or relay-drive designs.
Low gate charge (Qg)12 nC typical enables use of low-power gate drivers and reduces dynamic losses in high-frequency (>100 kHz) switching applications.
Enhancement-mode onlyNo default conduction at VGS = 0 V; ensures fail-safe off-state during power-up, reset, or driver fault conditions.
JEDEC-standard TO-220ABIndustry-standard footprint and thermal profile; allows drop-in replacement with other TO-220AB P-MOSFETs in existing layouts.

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: Step-down regulator supplying 5 V/2 A to microcontroller subsystem from 24 V industrial bus.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 250 kHz PWM frequency.

Use Value: RDS(on) ≤ 0.28 Ω minimizes conduction loss (< 1.7 W at 2 A), while Qg = 12 nC ensures clean 50 ns turn-off with standard 1 A gate driver.

Use Scenario: H-bridge half-bridge leg controlling bidirectional 12 V, 1.5 A brushed motor in automated valve actuator.

IC Role / Device Role / Timing Role: High-side or low-side switching element with dead-time controlled gate drive.

Use Value: Avalanche rating (EAS = 115 mJ) absorbs back-EMF spikes during motor commutation without clamping diodes.

LED Constant-Current DriverIndustrial Power Sequencer

Use Scenario: Linear+switching hybrid LED driver delivering 350 mA to high-brightness white LEDs from 48 V supply.

IC Role / Device Role / Timing Role: Precision current-sink switch modulated at 1–10 kHz for dimming control.

Use Value: Tight VGS(th) range (−2.0 to −4.0 V) enables accurate analog current regulation using simple op-amp feedback.

Use Scenario: Controlled power-up sequencing for FPGA, ADC, and interface ICs in test equipment rack.

IC Role / Device Role / Timing Role: Delayed-enable switch isolating downstream rails until master controller asserts enable signal.

Use Value: Enhancement-mode behavior guarantees OFF state at power-on; SOA rating supports safe inrush limiting during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXTP10P06TVDSS = −60 V, RDS(on) = 0.22 Ω (max) at VGS = −10 V, TO-220 non-isolated tabLower RDS(on) improves efficiency but requires drain-to-heatsink insulation; no avalanche rating specifiedPrefer for higher-efficiency, lower-thermal-demand designs where avalanche robustness is secondary
IRF9540NPBFVDSS = −100 V, RDS(on) = 0.20 Ω (max) at VGS = −10 V, TO-220AB isolated tabHigher voltage rating adds margin for 48 V systems but increases gate charge (Qg = 44 nC) and costChoose when bus voltage may exceed 60 V transiently or long-term reliability under overvoltage stress is critical

Compared with IXTP10P06T and IRF9540NPBF, the 2SJ330-AZ offers balanced trade-offs: moderate RDS(on), guaranteed avalanche capability, and TO-220AB isolation-making it optimal for cost-sensitive, thermally constrained 24–48 V industrial switching where transient robustness matters.

Availability

2SJ330-AZ is available at Aetrix Electronics and suitable for DC-DC converters, brushed DC motor drivers, LED constant-current drivers, and industrial power sequencers requiring stable component supply and long-term manufacturing continuity.

Supply support for 2SJ330-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The 2SJ330-AZ belongs to Renesas' legacy discrete power MOSFET product line, engineered for industrial-grade reliability and ruggedized switching in power conversion and motor control applications.

FAQ

What is the maximum continuous drain current rating for the 2SJ330-AZ?

The 2SJ330-AZ is rated for −3 A continuous drain current at TC = 25 °C. This rating decreases linearly with increasing case temperature, reaching approximately −1.5 A at TC = 100 °C. Derating curves are provided in the official Renesas datasheet, and actual usable current depends on heatsinking, ambient temperature, and duty cycle. Always verify thermal design margins using RthJC = 2.5 °C/W and measured junction temperature.

Does the 2SJ330-AZ have avalanche capability, and is it tested?

Yes, the 2SJ330-AZ is fully specified and tested for single-pulse avalanche energy (EAS = 115 mJ) and repetitive avalanche operation per JEDEC JESD22-A116. This capability is guaranteed across the full operating temperature range and is integral to its qualification for industrial switching applications involving inductive loads. The 2SJ330-AZ datasheet includes SOA and avalanche test conditions.

Is the metal tab of the 2SJ330-AZ electrically isolated?

Yes, the TO-220AB package used by the 2SJ330-AZ features an electrically isolated metal tab internally connected to the drain. This isolation allows safe mounting to grounded heatsinks without shorting the drain node, provided standard insulating hardware (mica washer, sil-pad) is used. The isolation voltage rating is 2500 VRMS per minute, verified during production testing.

What gate drive voltage is required to fully enhance the 2SJ330-AZ?

The 2SJ330-AZ achieves its specified RDS(on) ≤ 0.28 Ω at VGS = −10 V. While it begins conducting at VGS(th) ≈ −2.0 V to −4.0 V, −10 V is required for minimal on-resistance and optimal efficiency. Driving at −5 V yields significantly higher RDS(on) (~0.5 Ω), increasing conduction loss. The 2SJ330-AZ gate is not 5 V logic-compatible.

Can the 2SJ330-AZ be used in parallel with identical devices?

Parallel operation of 2SJ330-AZ devices is feasible due to its positive temperature coefficient of RDS(on), which promotes current sharing as temperature rises. However, matched gate drive layout, symmetrical PCB routing, and individual gate resistors are mandatory. Thermal coupling between devices must be minimized. Renesas does not guarantee parallel operation performance, and each 2SJ330-AZ must be individually derated per its SOA limits.

2SJ330-AZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

2SJ330-AZ FAQ

1.How can I place an order for 2SJ330-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SJ330-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SJ330-AZ reliable?

The price and inventory of 2SJ330-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ330-AZ is usually 5 days.

3.What payment methods are accepted for 2SJ330-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ330-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SJ330-AZ?

2SJ330-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SJ330-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SJ330-AZ?

For technical support, including 2SJ330-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ330-AZ requirements.

6.How does Aetrix verify that 2SJ330-AZ is sourced from the original manufacturer or authorized distributors?

All 2SJ330-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ330-AZ meets industry standards.

7.What is the process for return or replacement of 2SJ330-AZ?

All 2SJ330-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ330-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SJ330-AZ part is unused and in its original packaging.

Return procedure for 2SJ330-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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