Renesas 2SJ350

Overview

2SJ350 from Renesas Technology Corp. is a silicon P-channel MOSFET designed for high-speed power switching in DC-DC converters and switching regulators. It features –120 V drain-to-source voltage, –6 A continuous drain current, 0.5 Ω typical R_DS(on) at V_GS = –10 V, and 45 ns rise time - enabling efficient low-side switching in offline and isolated power supplies.

For engineers reviewing the 2SJ350 datasheet, 2SJ350 pinout, 2SJ350 application, or 2SJ350 equivalent, key selection criteria include gate drive compatibility with 5 V logic, body diode reverse recovery time (240 ns), thermal resistance (6.25 °C/W), and safe operating area limits under pulsed conditions.

Technical Context

The 2SJ350 operates as a depletion-mode P-channel enhancement-type MOSFET with fixed gate threshold (V_GS(off) = –1.0 to –2.0 V) and optimized charge characteristics for fast turn-on/turn-off. Its low gate charge and 900 pF input capacitance support operation up to several hundred kHz in hard-switched topologies.

Thermal design relies on its TO-220FM package's 6.25 °C/W junction-to-case resistance and defined transient thermal impedance curve. The integrated body diode has –1.2 V forward voltage at –6 A and 240 ns reverse recovery time under 50 A/µs di/dt - critical for synchronous rectification and freewheeling paths.

Key Specifications

Pinout & Package

2SJ350 uses the TO-220FM package: insulated tab, single-row 3-pin vertical mount, 1.8 g mass, and 17.0 mm height. Mounting hole accommodates M3 screw; tab is electrically connected to Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF9540NPBF and STP12PF06, the 2SJ350 trades higher R_DS(on) for superior –120 V rating and proven reliability in legacy 100 V+ power supplies - making it preferred where long-term availability and surge immunity outweigh minimal conduction loss savings.

Availability

2SJ350 is available at Aetrix Electronics and suitable for switching regulators, DC-DC converters, and motor drive circuits requiring stable component supply across extended production lifecycles.

Supply support for 2SJ350 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Technology Corp. is a Japanese semiconductor manufacturer formed in 2003 through the merger of Hitachi and Mitsubishi Electric's semiconductor divisions, specializing in microcontrollers, analog, power, and discrete devices.

The 2SJ350 belongs to Renesas' legacy high-voltage P-channel MOSFET product line, engineered for ruggedness and consistency in industrial power conversion - emphasizing thermal stability, SOA integrity, and gate drive simplicity over ultra-low R_DS(on).

FAQ

What is the maximum gate-to-source voltage rating for the 2SJ350?

The 2SJ350 has a maximum gate-to-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits clamp V_GS within this range - especially during transients or hot-plug events. The 2SJ350 datasheet specifies ±20 V as absolute maximum, with recommended operating range between –16 V and +16 V for long-term reliability.

Can the 2SJ350 be driven directly by a 5 V microcontroller GPIO?

Yes, the 2SJ350 can be driven directly by a 5 V microcontroller GPIO when used in low-side configuration. Its gate threshold voltage (V_GS(off)) ranges from –1.0 V to –2.0 V, and it achieves full enhancement at –4 V - well within the swing of a 5 V logic output referenced to source. The 2SJ350's low gate charge further reduces drive current demand, easing interface requirements.

What is the safe operating area (SOA) limitation for the 2SJ350 at 100 µs pulse width?

At 100 µs pulse width, the 2SJ350's safe operating area limits drain current to approximately –8 A at –100 V, based on the SOA graph in the datasheet. This boundary is constrained by both R_DS(on) (conduction limit) and secondary breakdown (thermal limit). The 2SJ350 must not operate beyond this envelope to avoid localized heating or catastrophic failure - particularly important in motor stall or overload protection circuits.

Does the 2SJ350 have an integrated body diode, and what are its key parameters?

Yes, the 2SJ350 includes an integrated body diode rated for –6 A continuous reverse current. Its forward voltage is –1.2 V at –6 A and 25 °C, and its reverse recovery time (t_rr) is 240 ns under 50 A/µs di/dt conditions. These values are critical for estimating freewheeling losses and dead-time requirements in bridge topologies. The 2SJ350 body diode is not optimized for ultrafast recovery but is sufficient for <200 kHz operation.

How does the 2SJ350's thermal resistance affect heatsink selection?

The 2SJ350 has a junction-to-case thermal resistance (θ_JC) of 6.25 °C/W. For a 20 W channel dissipation at T_C = 25 °C, the junction temperature would reach 150 °C - its absolute maximum. To maintain T_J ≤125 °C at 15 W continuous dissipation, a heatsink with ≤2.5 °C/W total thermal resistance (including interface material) is required. The 2SJ350's TO-220FM package mandates mechanical mounting to ensure low-impedance thermal path.