Renesas 2SJ356(0)-T1-AY

Overview

2SJ356(0)-T1-AY from Renesas Electronics is a P-channel vertical MOSFET designed for high-speed switching in low-voltage DC/DC converters and actuator drivers. It features R_DS(on) = 0.50 Ω max at V_GS = –10 V, ID = –1.0 A; V_DSS = –60 V; I_D(DC) = ±2.0 A; and direct 5-V IC drivability. Its TO-236 (SOT-23) package supports compact power-stage layouts.

For engineers reviewing the 2SJ356(0)-T1-AY datasheet, 2SJ356(0)-T1-AY pinout, 2SJ356(0)-T1-AY application, or 2SJ356(0)-T1-AY equivalent, key selection criteria include gate threshold compatibility with 5-V logic, pulsed drain current capability up to ±4.0 A, safe operating area under transient loads, internal body diode recovery performance (t_rr = 82 ns), and thermal derating on ceramic substrates.

Technical Context

This device operates as a single N-channel depletion-mode–like P-channel enhancement MOSFET with integrated gate protection diode and source-drain body diode. Its vertical structure enables low R_DS(on) while maintaining fast switching: t_d(on) = 4.3 ns, t_r = 21 ns, t_d(off) = 115 ns, and t_f = 75 ns under specified test conditions (V_DD = –25 V, R_G = 10 Ω).

The device's gate charge profile (Q_G = 11.6 nC, Q_GS = 1.0 nC, Q_GD = 3.8 nC) and capacitance values (C_iss = 270 pF, C_oss = 145 pF, C_rss = 55 pF) are optimized for efficient gate-drive energy use in synchronous buck or load-switch topologies operating below 1 MHz.

Key Specifications

Pinout & Package

2SJ356(0)-T1-AY is housed in a TO-236 (SOT-23) plastic surface-mount package with gull-wing leads, measuring 2.5 ± 0.1 mm × 4.0 ± 0.25 mm × 1.5 ± 0.1 mm. The package is rated for reflow soldering per JEDEC J-STD-020 and supports automated placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with Si2301DS-T1-E3 and DMG2305UVT-7, the 2SJ356(0)-T1-AY offers unique 60 V blocking capability and verified 5-V drivability at higher current, making it the only option among the three suitable for 12–24 V industrial or automotive high-side switching without level shifting.

Availability

2SJ356(0)-T1-AY is available at Aetrix Electronics and suitable for DC/DC converter design, actuator control, and industrial digital output modules requiring stable component supply, long-lifecycle support, and traceable sourcing for production programs.

Supply support for 2SJ356(0)-T1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.

The 2SJ356(0)-T1-AY belongs to Renesas' legacy discrete power portfolio, engineered specifically for cost-sensitive, high-reliability 5-V logic-driven switching in consumer and industrial equipment.

FAQ

What is the maximum gate-to-source voltage rating for the 2SJ356(0)-T1-AY?

The 2SJ356(0)-T1-AY has a gate-to-source voltage rating of –20 V / +10 V, meaning it can withstand up to –20 V reverse bias and +10 V forward bias without damage. This specification is defined in the Absolute Maximum Ratings table and reflects the internal gate protection diode's clamping capability. Exceeding these limits risks permanent gate oxide degradation. Always verify gate drive circuitry stays within this window during transients and startup.

Does the 2SJ356(0)-T1-AY have an integrated body diode, and what are its recovery characteristics?

Yes, the 2SJ356(0)-T1-AY includes an intrinsic source-drain body diode. Its reverse recovery time (t_rr) is 82 ns and reverse recovery charge (Q_rr) is 94 nC under IF = 2.0 A and di/dt = 50 A/µs. These values are measured and guaranteed per the Electrical Characteristics table, enabling predictable snubber design in inductive switching applications like motor drivers or DC/DC converters.

Can the 2SJ356(0)-T1-AY be used with standard 5-V CMOS logic outputs without a gate driver?

Yes, the 2SJ356(0)-T1-AY is explicitly characterized for direct 5-V IC drive. Its gate threshold (V_GS(off)) ranges from –1.0 V to –2.0 V, and R_DS(on) is guaranteed at V_GS = –4 V and –10 V. With total gate charge Q_G = 11.6 nC, typical 5-V microcontroller GPIO pins (capable of ~20 mA) can fully switch the device within microseconds, confirming suitability for logic-level direct drive per the datasheet's FEATURES section.

What is the thermal resistance and derating behavior of the 2SJ356(0)-T1-AY on a standard PCB?

The 2SJ356(0)-T1-AY specifies 2.0 W total power dissipation on a 16 cm² × 0.7 mm ceramic substrate. Its transient thermal resistance curve shows r_th(j-a) ≈ 100 °C/W for 10 ms pulses. On standard FR-4 with minimal copper, derating begins above 50 °C ambient - the datasheet provides a linear derating factor chart showing 100% power at 25 °C dropping to 0% at 150 °C. For reliable operation, keep junction temperature below 150 °C using appropriate copper area or airflow.

Is the 2SJ356(0)-T1-AY compliant with RoHS and lead-free assembly requirements?

Yes, the 2SJ356(0)-T1-AY is RoHS-compliant and qualified for lead-free reflow soldering per JEDEC J-STD-020. The "PR" marking on the device body indicates RoHS-compliant packaging and plating. Renesas confirms environmental compliance in its general notices, and the device meets EU RoHS Directive restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. No exemptions apply.