Renesas 2SJ358-T1-AZ
- Part No.:
- 2SJ358-T1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-243AA
- Datasheet:
-
2SJ358-T1-AZ.pdf
- Description:
- 2SJ358-T1-AZ - P-CHANNEL MOS FET
- Quantity:
- Payment:

- Shipping:

Inventory:4,550
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Product details
Overview
2SJ358-T1-AZ from Renesas Electronics is a P-channel vertical MOSFET designed for high-speed switching in low-voltage DC/DC converters and actuator drivers. It features RDS(ON) = 0.30 Ω max at VGS = –10 V, ID = –1.5 A; VDSS = –60 V; ID(DC) = –3.0 A; and direct 5 V IC gate drive capability.
For engineers reviewing the 2SJ358-T1-AZ datasheet, 2SJ358-T1-AZ pinout, 2SJ358-T1-AZ application, or 2SJ358-T1-AZ equivalent, key selection criteria include its –60 V drain-source rating, low on-resistance at 5 V gate drive, fast switching (tr = 35 ns), integrated gate-protect diode, and suitability for industrial-grade power switching where thermal derating on ceramic board must be considered.
Technical Context
The 2SJ358-T1-AZ implements a vertical DMOS structure optimized for enhanced conduction efficiency and reduced switching losses. Its gate threshold voltage range (VGS(off) = –1.0 to –2.0 V) ensures reliable turn-off under noisy conditions, while the internal gate-source ESD protection diode provides basic electrostatic immunity-though external clamping remains mandatory per design guidelines.
It operates with a maximum channel temperature of 150 °C and exhibits strong temperature stability in RDS(ON), with curves confirming <0.4 Ω up to 150 °C at –1.5 A. The device's Ciss = 600 pF and QG = 23.9 nC support efficient gate driving in medium-frequency (<500 kHz) switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –60 V: Maximum blocking voltage for use in 48 V bus or flyback secondary-side switching. |
| RDS(ON) @ VGS = –10 V | 0.30 Ω max: Enables <1 W conduction loss at –3 A DC, suitable for compact heatsinkless designs. |
| ID(DC) | –3.0 A: Continuous current rating at Tch ≤ 150 °C on 7.5 cm² ceramic board. |
| tr / tf | 35 ns / 95 ns: Supports >200 kHz PWM operation with minimal switching loss trade-off. |
| QG | 23.9 nC: Determines gate driver current requirement (~2.4 mA avg at 100 kHz, 10 V swing). |
| VGS(off) | –1.4 V typ: Ensures robust noise margin against false turn-on in industrial environments. |
| Ciss | 600 pF: Impacts gate drive loop stability and EMI filtering requirements. |
Pinout & Package
2SJ358-T1-AZ uses the TO-236AA (SC-59) surface-mount package: 3-pin, compact footprint (5.7 × 2.0 mm), plastic-molded, with gull-wing leads. Thermal performance rated for 2.0 W total power loss on 7.5 cm² × 0.7 mm ceramic board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path and reference node for gate drive | Connected to system ground or low-side return; carries full load current and defines VGS reference. |
| 2 (Drain) | High-side power input/output terminal | Connects to negative rail or inductive load; withstands –60 V and handles peak pulsed current up to –6 A. |
| 3 (Gate) | Control input for MOSFET channel modulation | Requires clean, low-impedance 5 V logic-level drive; protected internally by gate-source diode but needs external TVS for surge immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Direct 5 V IC gate drive | Eliminates level-shifting circuitry in microcontroller-based motor or converter control, reducing BOM count and layout area. |
| Low RDS(ON) at –4 V gate | 0.40 Ω max enables functional operation even with degraded gate drive (e.g., due to series resistance or PCB trace inductance). |
| Integrated gate-protect diode | Provides baseline ESD immunity (HBM >2 kV), reducing need for discrete gate protection in non-safety-critical applications. |
| Fast switching with low QGD | QGD = 8.1 nC minimizes Miller plateau duration, improving controllability during hard-switching transitions. |
Applications
| DC/DC Converter Secondary Switch | Small Actuator Driver |
|---|---|
Use Scenario: Synchronous rectification in isolated 12–48 V output DC/DC converters for industrial PLCs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, replacing Schottky diodes to reduce conduction loss and improve efficiency above 200 kHz. Use Value: Achieves >3 % efficiency gain over 40 V Schottky at 2 A load due to RDS(ON) < 0.3 Ω and low QG. | Use Scenario: Driving 12 V solenoid valves or small DC motors in factory automation I/O modules. IC Role / Device Role / Timing Role: High-side or low-side power switch controlled directly by 5 V GPIO or logic buffer. Use Value: Eliminates external level shifter; supports 3 A continuous current with <0.5 W self-heating on standard FR4 with copper pour. |
| LED Backlight Dimming | Power Sequencing Control |
Use Scenario: PWM dimming of 24 V LED strings in industrial HMI displays. IC Role / Device Role / Timing Role: Low-side current sink switch operating at 1–5 kHz PWM frequency. Use Value: Fast tf = 95 ns ensures sharp current edges, minimizing LED current ripple and audible coil whine. | Use Scenario: Controlled power-up sequencing of analog sensor subsystems in condition-monitoring equipment. IC Role / Device Role / Timing Role: Soft-start enable switch isolating downstream LDOs or op-amp rails until main supply stabilizes. Use Value: Gate threshold of –1.4 V typ prevents partial turn-on during supply ramp, avoiding latch-up or transient overcurrent. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | VDSS = –20 V, RDS(ON) = 0.115 Ω @ –4.5 V, SOT-23 package | Limited to ≤24 V systems; higher current density but lower voltage margin | Select when board space is critical and bus voltage stays below 16 V; verify gate drive compatibility with 3.3 V logic. |
| IRF9530NPBF | VDSS = –100 V, RDS(ON) = 0.3 Ω @ –10 V, TO-220 package | Higher voltage rating but larger footprint and slower switching (tr = 80 ns) | Choose for legacy through-hole designs or higher-reliability 100 V applications where thermal mass outweighs speed needs. |
Compared with Si2301DDS-T1-GE3 and IRF9530NPBF, the 2SJ358-T1-AZ uniquely balances –60 V rating, 5 V drive compatibility, and SC-59 compactness-making it optimal for space-constrained 36–48 V industrial switching where gate drive simplicity and thermal performance on ceramic substrates are prioritized.
Availability
2SJ358-T1-AZ is available at Aetrix Electronics and suitable for DC/DC converter secondary-side switching, small actuator control, LED backlight dimming, and power sequencing applications requiring stable component supply across extended production lifecycles.
Supply support for 2SJ358-T1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The 2SJ358-T1-AZ belongs to Renesas' legacy discrete power MOSFET product line, engineered specifically for cost-sensitive, high-reliability industrial switching applications requiring robust 5 V logic compatibility and thermal stability on ceramic substrates.
FAQ
What is the maximum continuous drain current for the 2SJ358-T1-AZ?
The 2SJ358-T1-AZ has a maximum continuous drain current (ID(DC)) of –3.0 A at Ta = +25 °C when mounted on a 7.5 cm² × 0.7 mm ceramic board. Derating applies above +25 °C ambient, with full 0 A rating at +125 °C ambient per published derating curve. This rating assumes proper PCB copper area and no additional heatsinking.
Can the 2SJ358-T1-AZ be driven directly by a 3.3 V microcontroller GPIO?
The 2SJ358-T1-AZ is specified for direct drive at 5 V, with RDS(ON) = 0.40 Ω max at VGS = –4 V. At 3.3 V, gate drive is insufficient for guaranteed low on-resistance-RDS(ON) rises sharply below –4 V per transfer characteristics. For 3.3 V systems, a gate driver or level shifter is required to ensure reliable switching performance of the 2SJ358-T1-AZ.
Does the 2SJ358-T1-AZ include an integrated body diode, and what are its recovery specs?
Yes, the 2SJ358-T1-AZ includes an inherent parasitic body diode between source and drain. Its reverse recovery time (trr) is 95 ns at IF = 3.0 A and di/dt = 50 A/µs, with Qrr = 118 nC. These values are measured under pulsed conditions and confirm suitability for moderate-frequency freewheeling in DC/DC converters-but not ultra-fast synchronous rectification above 1 MHz.
What is the quality grade and recommended application scope for the 2SJ358-T1-AZ?
The 2SJ358-T1-AZ is classified as "Standard" quality grade per Renesas documentation. It is approved for use in computers, office equipment, communications gear, test instruments, audio/video devices, home appliances, machine tools, personal electronics, and industrial robots. It is explicitly excluded from aerospace, nuclear, medical life-support, and submersible repeater applications.
How does the thermal performance of the 2SJ358-T1-AZ compare between FR4 and ceramic board mounting?
Renesas specifies the 2SJ358-T1-AZ's total power loss (PT) as 2.0 W only when mounted on a 7.5 cm² × 0.7 mm ceramic board. On standard FR4 with 1 oz copper, thermal resistance increases significantly-derating curves show usable power drops to ~0.8 W at +70 °C ambient. For reliable operation beyond 0.5 W, ceramic or metal-core PCBs are strongly recommended for the 2SJ358-T1-AZ.
2SJ358-T1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.9 nC @ 10 V
- Vgs (Max):
- +10V, -20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 600 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- MP-2
2SJ358-T1-AZ FAQ
1.How can I place an order for 2SJ358-T1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SJ358-T1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SJ358-T1-AZ reliable?
The price and inventory of 2SJ358-T1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SJ358-T1-AZ is usually 5 days.
3.What payment methods are accepted for 2SJ358-T1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SJ358-T1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SJ358-T1-AZ?
2SJ358-T1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SJ358-T1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SJ358-T1-AZ?
For technical support, including 2SJ358-T1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SJ358-T1-AZ requirements.
6.How does Aetrix verify that 2SJ358-T1-AZ is sourced from the original manufacturer or authorized distributors?
All 2SJ358-T1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SJ358-T1-AZ meets industry standards.
7.What is the process for return or replacement of 2SJ358-T1-AZ?
All 2SJ358-T1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with 2SJ358-T1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SJ358-T1-AZ part is unused and in its original packaging.
Return procedure for 2SJ358-T1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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