Renesas 2SJ387L-E

Overview

2SJ387L-E from Renesas Electronics is a silicon P-channel MOSFET designed for high-speed power switching in DC-DC converters and switching regulators. It features –20 V drain-to-source voltage rating, –10 A continuous drain current, and low on-resistance of 0.05 Ω at –4 V gate drive - enabling efficient operation with 3 V logic-level control. Its DPAK (L)-(2) package supports thermal management in compact power stages.

For engineers reviewing the 2SJ387L-E datasheet, 2SJ387L-E pinout, 2SJ387L-E application, or 2SJ387L-E equivalent, key selection criteria include its –2.5 V gate threshold compatibility with low-voltage controllers, body diode reverse recovery time of 240 ns, and safe operating area defined up to 150 °C channel temperature.

Technical Context

This P-channel MOSFET operates as a high-side switch in synchronous buck topologies and load-switching circuits. Its gate threshold voltage range (–0.5 V to –1.5 V) ensures reliable turn-on with 3 V microcontroller outputs, while the 1170 pF input capacitance and 310 pF reverse transfer capacitance support predictable gate drive timing.

The device integrates a monolithic body diode with –1.0 V forward voltage at –10 A, and exhibits defined switching behavior: 20 ns turn-on delay, 325 ns rise time, 350 ns turn-off delay, and 425 ns fall time under standardized test conditions (V_GS = –4 V, R_L = 2 Ω, I_D = –5 A).

Key Specifications

Pinout & Package

2SJ387L-E uses the DPAK (L)-(2) package (RENESAS code PRSS0004ZD-B), a surface-mount power package with exposed drain tab for thermal conduction. Dimensions: 16.2 × 4.7 × 1.7 mm (L × W × H), mass 0.42 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF9540NPbF and Si2305DS, the 2SJ387L-E uniquely balances 3 V logic compatibility, 10 A current capability, and DPAK thermal performance - making it optimal for mid-power DC-DC and industrial load-switching where gate drive simplicity and thermal margin are jointly critical.

Availability

2SJ387L-E is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap modules, and motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for 2SJ387L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The 2SJ387L-E belongs to Renesas' legacy silicon power MOSFET product line, engineered for high-efficiency, high-reliability discrete power switching in industrial power supplies and embedded power management systems.

FAQ

What is the maximum continuous drain current rating for the 2SJ387L-E?

The 2SJ387L-E has a maximum continuous drain current (I_D) of –10 A at T_c = 25°C. This rating assumes proper heatsinking and derates linearly above 25°C case temperature per the published thermal derating curve. At 100°C case temperature, the usable continuous current drops to approximately –5 A. The 2SJ387L-E must be operated within this limit to avoid thermal runaway or permanent damage.

Does the 2SJ387L-E support 3 V logic-level gate drive?

Yes, the 2SJ387L-E supports 3 V logic-level gate drive. Its gate threshold voltage (V_GS(off)) ranges from –0.5 V to –1.5 V, and it achieves R_DS(on) = 0.07 Ω max at V_GS = –2.5 V - confirming full enhancement with standard 3 V CMOS outputs. This eliminates the need for gate driver ICs or level shifters in many low-voltage control applications, simplifying design around the 2SJ387L-E.

What package type does the 2SJ387L-E use, and is it RoHS-compliant?

The 2SJ387L-E uses the DPAK (L)-(2) surface-mount package (RENESAS code PRSS0004ZD-B), with JEITA designation SC-63. Per Renesas documentation and compliance records, the 2SJ387L-E is RoHS-compliant and lead-free. Its exposed drain tab provides both electrical and thermal functionality, requiring appropriate solder mask clearance and thermal pad layout per IPC-7351 standards for optimal 2SJ387L-E performance.

Can the 2SJ387L-E be used in synchronous rectification applications?

Yes, the 2SJ387L-E is suitable for synchronous rectification, particularly in flyback and forward converters operating below 20 V output. Its integrated body diode has V_DF = –1.0 V at –10 A and t_rr = 240 ns, enabling efficient replacement of Schottky diodes. Gate timing must align with secondary-side voltage polarity reversal; the 2SJ387L-E's 20 ns t_d(on) and 350 ns t_d(off) support precise control in 100–500 kHz designs.

What is the safe operating area (SOA) limitation for the 2SJ387L-E at DC operation?

At DC operation with T_c = 25°C, the 2SJ387L-E's safe operating area is limited by R_DS(on) to approximately –5 A at –10 V V_DS, or –10 A at –5 V V_DS, as shown in the SOA graph on page 3 of the datasheet. Exceeding these boundaries risks thermal instability. For sustained DC use, the 2SJ387L-E must remain within its 20 W channel dissipation limit and 150 °C channel temperature ceiling - enforced via heatsink design and ambient thermal management.